DQ169 Search Results

71WS256NC0BAIAU

Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics

S29WS256N

Abstract: S71WS512NE0BFWZZ
Contextual Info: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip

Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

TLA064

Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

COSMO MARKING

Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 WS128J cosmo MARKING CODE COSMO DEVICE MARKING COSMO DEVICE MARKING DATE cosmoram synchronous
Contextual Info: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM ADVANCE DATASHEET Distinctive Characteristics MCP Features „ „ Power supply voltage of 1.7 to 1.95V

S29PL127J

Abstract: S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 MCP51
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

MB82DBS04163C

Abstract: MB82DBS04163C-70L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E MEMORY Mobile FCRAMTM CMOS 64M Bit 4M word x 16 bit Mobile Phone Application Specific Memory MB82DBS04163C-70L CMOS 4,194,304-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface Programmable Page Mode & Burst Mode

MB82D01181E

Abstract: MB82D01181E-60L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E MEMORY Mobile FCRAMTM CMOS 16M Bit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01181E-60L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface n DESCRIPTION

MB82DS01181E

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE3.0E MEMORY Mobile FCRAMTM CMOS 16M Bit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82DS01181E-70L-A CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface DESCRIPTION

Mcp90

Abstract: MCP78 032J mcp68
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

S29PL129J

Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

SPANSION gl512

Abstract: GL512 S29GL256N 32mb GL512N TLD084 S71GL128NB0 S71GL256NB0 S71GL512NB0 S29GLxxxN GL128n
Contextual Info: S71GL512NB0/S71GL256NB0/ S71GL128NB0 Stacked Multi-chip Product MCP 512/256/128 Megabit (32/16/8 M x 16-bit) CMOS 3.0 Volt-only MirrorBitTM Page-mode Flash Memory with 32 Megabit (2M x 16-bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics MCP Features

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

Contextual Info: MB82DBS02163C MB82DBS04163B New Products Cellular Phone Application Specific Memory 32M-bit/64M-bit Burst Mode Mobile FCRAMTM MB82DBS02163C/MB82DBS04163B FUJITSU has unveiled a new pair of enhanced 32M-bit and 64M-bit Mobile FCRAMTM devices that adopt burst mode read/write operations in compliance with

Contextual Info: S71PL129JC0/S71PL129JB0/ S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE Distinctive Characteristics

Contextual Info: S71GL064A based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE Distinctive Characteristics MCP Features

Contextual Info: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M/4M x 16-Bit) CosmoRAM and 512 Mb ( 32M x 16-bit) Data Storage Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV

Contextual Info: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION

MB82DBS02163C

Abstract: MB82DBS02163C-70L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE4.0E MEMORY Mobile FCRAMTM CMOS 32M Bit 2 M word x 16 bit Mobile Phone Application Specific Memory MB82DBS02163C-70L CMOS 2,097,152-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface Programmable Page Mode & Burst Mode

fBGA package tray

Abstract: 63 ball fbga thermal resistance spansion 7149A S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 6129A MCP51
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static

MCP 90

Abstract: bfw 10 transistor transistor marking A21 S71PL064 bfw resistor S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80
Contextual Info: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and SRAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/ 32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

spansion S29GL064

Abstract: bfw 10 transistor S29GL064 S71GL064A S71GL064A08-0B S71GL064A08-0F S71GL064A80-0K S71GL064A80-0P s29glxxxa Stacked 4MB Flash and 1MB SRAM
Contextual Info: S71GL064A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

71WS512ND

Contextual Info: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics

MB82DP04183C

Abstract: MB82DP04183C-65L
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Mobile FCRAMTM CMOS 64M Bit 4 M word x 16 bit Mobile Phone Application Specific Memory MB82DP04183C-65L CMOS 4,194,304-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface DESCRIPTION