DQ24 Search Results

cd018

Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C

EM542323TQ-11

Abstract: TQFP 14X20
Contextual Info: EtronTech EM542323 2.5V/3.3V I/O 64K x 32 Pipelined Burst SRAM Preliminary 9/97 • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT # VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2

MOD32

Abstract: TMS28F033
Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY SMJS833 – NOVEMBER 1997 V DDE RP CLK QV RY/BY LBA V SSI S/5IO V DDI E WE OE WR WORD/DIS BAA/LRV 60 VSSE VSSE 6 59 VDDE DQ20 7 58 DQ11 DQ21 8 57 DQ10 DQ22 9 56 DQ9 DQ23 10 55 DQ8 DQ24 11 54 DQ7 DQ25 12 53 DQ6

Contextual Info: • P h ilip s S e m ico n d u cto rs ., 1^53^31 DQ24301 IbT APX P rodu ct sp e cifica tio n AUER PHILIPS/DISCRETE b?E D ^ — Schottky barrier diodes FE A T U R E S — BAS70 series Q U IC K R E F E R E N C E DATA • Low leakage current SYM BOL • Low turn-on and high breakdown

Contextual Info: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.

EM531323-5

Abstract: TWS - 315
Contextual Info: EtronTech Em531323 32K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9

EM532323Q-6

Abstract: DQ3225
Contextual Info: EtronTech EM532323 64K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9

tk 69

Contextual Info: DQP3 DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 VDD VDD VDD VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 DQP4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin LQFP 20 mm x 14 mm body

cq837

Contextual Info: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36

TM4SN64EPN10

Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Contextual Info: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •

Contextual Info: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles

TC5117405

Contextual Info: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are

Contextual Info: TOSHIBA THM3610B0AS/ASG-60/70 PRELIMINARY 1,048,576 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3610B0AS/ASG is a 1,048,576 words by 36 bits dynamic RAM module which assembled 2 pcs of TC5118180AJ on the printed circuit board. This module can be used as well as 2,097,152 words by 18 bits dynamic RAM module, by means

TMP68661

Contextual Info: TOSHIBA UC/UP S4E D • c]0,ì 7 2 4 Iì G 0 5 4 G 7 5 TO SHIBA Ö24 * T 0 S 3 TM P68661 1. INTRODUCTION - r - is - 3 1 - a n The TMP68661 enhanced program m able communications interface (EPCI) is a universal synchoronous/asynchronous data communications controller chip th at is an

BC6MA

Abstract: thm3640f0 thm3640 Toshiba D58 THM3640F0BS/BSG-60A70
Contextual Info: TOSHIBA THM3640F0BS/BSGW70 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ and 1 pc of TC5117440BSJ on the printed circuit board. This module is optimized for application to the systems which are

Contextual Info: TM124MBK36B, TM124MBK36R1 048 576 BY 36-BIT DYNAMIC RAM MODULE TM248NBK36B, TM248NBK36R 2 097152 BY 36-BIT DYNAMIC RAM MODULE S M M S 1 3 7 D - J A N U A R Y 1 9 9 1 - R E V IS E D J A N U A R Y 1993 * * * * * * * * * * Organization TM124MBK36B . . . 1 048 576 x 36

v801

Abstract: tc5165165
Contextual Info: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

K557

Abstract: TC511000Aj THM361020S-80 THM361020S thm361020
Contextual Info: W\ Ut -IKUWH'i1!'11-iJHii - - - : — THM361020S-80, 10 THM361020SG-80, 10 1,048,576 W O R D S X 36 BIT D Y N A M IC RAM M O DULE DESCRIPTION The THM36102CS is a 1,048,576 words by 36 bits dynamic RAM module which assembled 8 pcs of TC514400J and 4 pcs of TC511000AJ on the printed circuit board. The THM361020S can be as well

Contextual Info: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

TC514256

Contextual Info: 524,288 W O RD S x 40 BIT D Y N A M IC RAM M O D U LE DESCRIPTION The THM405120ASG/BSG is a 524,288 words by 40 bits dynamic RAM m odule which assem bled 20 pcs o f TC514256AJ/BJ on the printed circuit board. The THM405120ASG/BSG is optim ized for application to the system s which are required high density

TCK-1000

Abstract: D038 toshiba M7
Contextual Info: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

tc516

Contextual Info: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin