EDI8L32256V Search Results

Contextual Info: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP

256kx32

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
Contextual Info: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP

EDI8L32128V

Abstract: EDI8L32512V MO-47AE TMS320LC31
Contextual Info: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to

Contextual Info: ^EDI ED I8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS, INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static SRAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP

cd 5151

Abstract: 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 EDI8L32256V ADSP2106XL
Contextual Info: EDI8L32256V T NO 256Kx32 SRAM FEATURES n 256Kx32 bit CMOS Static The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. n DSP Memory Solution

EDI8L32512V-AC

Abstract: 8L32512V
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: EDI8L32128V 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

60MHZ

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization

EDI8L32512V

Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V T NO FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

Contextual Info: W EDI8L32128V £ \ ElfCTROMC 0E9GN& MCI 128Kx32 SRAM 3.3 Vot 128KX32CMOSHigh Speed Static RAM ¡Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access

ADSP2106XL

Contextual Info: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: White Electronic Designs EDI8L32128V 128KX32 CMOS HIGH SPEED STATIC RAM FEATURES 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: ^EDI EDI8L32128V ELECTRONIC DESIGNS. INC I 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM IFeatures The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static Analog SHARC External Memory Solution density Static RAM. The device is available with access

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

ED18L32512V

Abstract: ED18L325 ED18L32512 ED18L
Contextual Info: X32 ASYNCHRONOUS FAMILY 64K128K256KAND512KX325V/3.3V are packaged in a 68 pin, 0.99" square PLCC package. Available in either a 5V or 3.3V version the x32 family provides access speeds of 10ns, 12ns, 15ns and 20ns. EDI’s x32 Asynchronous SRAM family is de­

Contextual Info: ^EDI ED I8L32512V 512Kx32 SRAMModule ELECTRONIC DESIGNS, INC Preliminary 512Kx32 CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, • ADSP-21060L SHARC

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Contextual Info: ^EDI ED I8L32512V 512Kx32 SRAM Module ELECTRONIC DESIGNS. INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The ED I8L32512V is a high speed, 3.3V, 16 m egabit • ADSP-21060L SHARC SRAM. The device is available w ith access tim es of 12,

Contextual Info: W D ED I8L32128V I ELECTRONIC DESIGNS, INC I 128Kx32 SRAM 3.3 Volt 128Kx32 CMOS High Speed Static RAM Features The EDI8L32128V is a high speed, 3.3 volt, four megabit 128Kx32 bit CMOS Static density Static RAM. The device is available with access Analog SHARC External Memory Solution

60MHZ

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE
Contextual Info: White Electronic Designs EDI8L32128V 128Kx32 CMOS High Speed Static RAM FEATURES DESCRIPTION 128Kx32 bit CMOS Static Analog SHARC TM External Memory Solution ADSP-21060L ADSP-21062L Random Access Memory Array Fast Access Times: 12, 15 and 20ns User Configurable Organization

ADSP-21060L

Abstract: ADSP-21062L EDI8L32128V EDI8L32256C EDI8L32512V EDI8L3265C MO-47AE
Contextual Info: EDI8L32128V T NO Features 128Kx32 CMOS High Speed Static RAM 128Kx32 bit CMOS Static Analog SHARCTM External Memory Solution • ADSP-21060L • ADSP-21062L Random Access Memory Array • Fast Access Times: 12,15 and 20ns • User Configurable Organization with Minimal Additional Logic