ADSP2106XL Search Results

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

WED8L24257V

Abstract: DSP5630X
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

EDI8L24129V

Contextual Info: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution

WED8L24513V

Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

MO-47AE

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and

EDI8L32512V-AC

Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Contextual Info: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

EDI8L32512V-AC

Abstract: 8L32512V
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

ADSP-2153x

Abstract: DK2190 pld connector DSP JTAG 74HC374s ADDR15 PLD 22V10 chn a5 ADSP-218X internet audio player
Contextual Info: DSP System Memories A Complete System Memory Solution for Analog Devices’ General Purpose DSPs Jan 2002 STMicroelectronics Bootloading DSPs DSP Serial EEPROM SPI ACCESS Host MCU Host Interface SRAM DMA ACCESS 8-bit PARALLEL FLASH BOOT MEMORY DSP CORE Multiple ways to bootload on-chip SRAM at start-up or during

Contextual Info: SHARC Processor SUMMARY KEY FEATURES—PROCESSOR CORE High performance signal processor for communications, graphics and imaging applications Super Harvard Architecture 4 independent buses for dual data fetch, instruction fetch,

cd 5151

Abstract: ADSP-21060L ADSP-21062L EDI8L32512C EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

ADSP 21 XXX Sharc processor

Abstract: ADSP-21060 reference manual tms 1601 ADSP-21060 ADSP-21062 sharc iir filter SP-240-2 code marking h06 ADSP-21060 REV E M1543
Contextual Info: a SHARC Processor SUMMARY KEY FEATURES—PROCESSOR CORE High performance signal processor for communications, graphics and imaging applications Super Harvard Architecture Four independent buses for dual data fetch, instruction

TA248

Abstract: ADSP-2153x 20L8 74HC374 74XX ADSP-TS101S DSM2150F5 ADSP-218XM
Contextual Info: TA248 TECHNICAL ARTICLE DSM2150F5 – Not Just a “Boot Load” Memory Bryan Hahn, Programmable System Memories Division STMicroelectronics, San Jose The simplicity and flexibility of using the DSM2150F4, offers DSP system designers a complete turnkey system memory solution that

WED8L24513V

Abstract: 2106XL
Contextual Info: WED8L24513V White Electronic Designs Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION  512Kx24 bit CMOS Static  Random Access Memory Array     Fast Access Times: 10, 12, and 15ns  Master Output Enable and Write Control  TTL Compatible Inputs and Outputs

ADSP2106XL

Contextual Info: EDI8L32512V K>L 512Kx32SftAMModuk ELECIROMC 0E9GN1 N C 1 Preliminary 512KX32CMOSHigh Speed Static RAM F eatu re s DSP Memory Solution • ADSP-21060L SHARC The EDI8L32512V is a high speed, 3.3V, 16 megabit • ADSP-21062L (SHARC) SRAM. The device is available with access times of 12,

EE-160

Abstract: EE160 design book ADSP-21062 ADSP-21062L ADSP21160 ADSP-21160 ADSP-21160M 0x0004000
Contextual Info: a Engineer To Engineer Note EE-160 Technical Notes on using Analog Devices’ DSP components and development tools Phone: 800 ANALOG-D, FAX: (781) 461-3010, EMAIL: dsp.support@analog.com, FTP: ftp.analog.com, WEB: www.analog.com/dsp Examining ADSP-21160 Link Port

DSP5630x

Abstract: p 602 EDI8L24129V
Contextual Info: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,

ADSP-21060L

Abstract: ADSP-21062L EDI8F32512V EDI8L32128V MO-47AE MPC860 TMS320LC31 ADSP2106XL
Contextual Info: EDI8F32512V White Electronic 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8F32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

Contextual Info: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V

Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

EDI8L32512V25AI

Contextual Info: EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION  DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory

TCA 875

Abstract: TCA600 ADSP-21060 ADSP-21060C ADSP-21060L ADSP-21060LC ADSP-21062 ADSP-21062L VIH22
Contextual Info: SHARC Processor SUMMARY KEY FEATURES—PROCESSOR CORE High performance signal processor for communications, graphics and imaging applications Super Harvard Architecture 4 independent buses for dual data fetch, instruction fetch,

CYM8301BV33

Abstract: DSP5630X
Contextual Info: CYM8301BV33 512K x 24 Static RAM Module Features • • • • • • • High-density 12-Megabit SRAM module Access time: 10 ns Single 3.3V power supply Low active power 1000 W max. TTL-compatible inputs and outputs Available in standard 119-ball BGA

7 k 3456

Abstract: WED8L24513V
Contextual Info: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V