256KX24 Search Results

WED8L24257V

Abstract: DSP5630X
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

WED8L24258V

Contextual Info: WED8L24258V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

DSP5630X

Contextual Info: EDI8L24257V Asynchronous, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The EDI8L24257VxxBC is a 3.3V, three megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24257V is

WED8L24258V

Contextual Info: WED8L24258V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The WED8L24258VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

AS 15 -g

Abstract: WED8L24257V
Contextual Info: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V

la1342

Abstract: LS1820 ilsi 1.5V
Contextual Info: _ EDI8F24256C ^E D I E le c tr o n ic D e s ig n s In c . High Speed Six Megabit SRAM Module 256Kx24 Static RAM CMOS, High Speed Module Features The EDI8F24256C is a high speed six megabit Static 256Kx24 bit CMOS Static RAM module organized as 256K words by 24 bits. This

Contextual Info: KH ED/8L322S6V 25SKx32 SRAM ELECTRONIC DESIGNS NC. 256KX32,13V, StaticRAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12,15, 256Kx32 bit C M O S Static 17 and 20ns, allowing the creation of a no wait state DSP

Contextual Info: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM F e a tu re s The EDI8L24128V is a high speed, 3.3 volt, high perform­ ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or

dram zip 256kx16

Contextual Info: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5

1MX32

Contextual Info: WDl Table of Contents ELECTRONIC DESIGNS INC. T h is abbrcvialed dula book i.s intended as a supplem ent to E D I’s D atabook '93. All new products, not included in that issue, are identified by the sym bol show n here. rrh e product descriptions, pinouts, block diagram s

l6sr

Contextual Info: WDI Table of Contents ELECTRONIC DESIGNS INC ^ l i s abbreviated data book is intended as a supplennent to EDI's Databook '93. All new products, not included in that issue, are identified by the symbol shown here. The product descriptions, pinouts, block diagrams

256kx32

Abstract: ADSP-21062L EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 Theta-J
Contextual Info: ^EDI EDI8L32256V 256Kx32 SRAM ELECTRONIC DESIGNS. INC 256Kx32,3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit 256Kx32 bit CMOS Static S RAM. The device is available with access times of 12,15, DSP Memory Solution 17 and 20ns, allowing the creation of a no w ait state DSP

7665

Abstract: MO-47AE
Contextual Info: EDI8L24128V 128Kx24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 12 and 15ns • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic

truth table Static Random Access Memory SRAM

Abstract: EDI8L24128C MO-47AE
Contextual Info: EDI8L24128C 128Kx24 SRAM Module ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Random Access Memory Array • Fast Access Times: 15, 17, and 20 • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic

Contextual Info: ^EDI EDI8L32256C 256KX32 SRAM Module ELECTRONIC DESIGNS, INC 256Kx32,5V Static Ram ¡Features The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. 256Kx32 bit CMOS Static The device is available with access times of 15,17, 20and 25ns, allowing the creation of a no wait state DSP memory

GS71116AU-10E

Abstract: U12E AR 8316 GS816 bga 388 GS74116ATP-10E TQFP TQFP 100 PACKAGE GS71108A GS71116A
Contextual Info: Automotive Temperature Options Available! GSI Technology, a longtime vanguard in the SRAM market, is again leading the industry in customer-focused manufacturing by offering you EVEN MORE.SRAMs specifically designed for your temperature specification needs! We are now producing SRAMs in extended temperature

EDI8L32128V

Abstract: EDI8L32512V MO-47AE TMS320LC31
Contextual Info: EDI8L32256V 256Kx32 SRAM 256Kx32 , 3.3V, Static RAM Features The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to

MC68HC705 programmer

Abstract: DSP56002ADSA DSP56002EVM DSP56000CLASA DSP56000 DSP56100 DSP96000 DSP96002 DSP56004ADSA DSP96002 APPLICATIONS
Contextual Info: Order this document by DSPTOOLSP/D Rev. 2 MOTOROLA SEMICONDUCTOR ADM ADS CC PRODUCT INFORMATION Product Brief CLAS COMMAND EVM HOST DSP Development Tools Motorola offers a full line of hardware and software Digital Signal Processor DSP development tools to facilitate the development and debugging of user applications and

Contextual Info: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM Features The EDI8L24128V is a high speed, 3.3 volt, high perform­ ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or

DSP96002

Abstract: EDI8L24128C EDI8L32128C EDI8L32256C EDI8L32512C EDI8L3265C MO-47AE block diagram of of TMS320C4X
Contextual Info: EDI8L32256C Features 256Kx32, 5V Static Ram T NO The EDI8L32256C is a high speed, 5V, 8 megabit SRAM. The device is available with access times of 15, 17, 20 and 25ns, allowing the creation of a no wait state DSP memory solution. The device can be configured as a 256Kx32 and used to

cd 5151

Abstract: 512kx4 EDI8L32128V EDI8L32512V MO-47AE TMS320LC31 EDI8L32256V ADSP2106XL
Contextual Info: EDI8L32256V T NO 256Kx32 SRAM FEATURES n 256Kx32 bit CMOS Static The EDI8L32256V is a high speed, 3.3 volt, 8 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns, allowing the creation of a no wait state DSP memory solution. n DSP Memory Solution

12v 50 watt subwoofer circuit diagram

Abstract: lattice isp2064ve 50 watt subwoofer circuit diagram 500 watt audio subwoofer isp2064ve 800 watt subwoofer circuit diagram 100 watt subwoofer circuit diagram BBOPA2134UA 500 watt subwoofer circuit diagram isp2064
Contextual Info: DSP5636XEVMUM/AD 02/01 REV # 1.0 DSP5636XEVM User’s Manual Motorola, Incorporated Semiconductor Products Sector 6501 William Cannon Drive West Austin, TX 78735-8598 This document and other documents can be viewed on the World Wide Web at the following URL:

MO-47AE

Contextual Info: ^EDI E D I8 L 2 4 1 2 8 V ELECTRONIC DESIGNS. INC. | 128KX24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features The EDI8L24128V is a high speed, 3.3 volt, high perform­ 128Kx24 bit CMOS Static ance, three megabit density Static RAM organized as a

PS1M

Abstract: 36PIN 32 PIN
Contextual Info: R E F E R E N C E SIZE SHAM PART N U M B E R 4 Megabit 6 Megabit 8 Megabit 9 Megabit SIZE \ I O R G A N IZ A T IO N SPEED ns 256Kx8 25, 35, 45, 55, 70 32-Pin DIP 47 32-Pin 32-Pin 36-Pin 36-Pin SOJ SOL SOJ SOL 53 PACKAG E PAGE I I' K ( ) I ) 11 ( I DPS256S8AP