A17A18 Search Results

A17A

Abstract: HM62V8100I a4 096 HM62V8100
Contextual Info: HM62V8100I Series Block Diagram TSOP LSB A5 A6 A7 A4 A3 A9 A10 A11 A12 A13 MSB A14 V CC V SS • • • • • Row decoder I/O0 Memory matrix 2,048 x 4,096 Column I/O • • Input data control • • Column decoder I/O7 LSB MSB A16 A17A18 A19 A0 A1 A2 A15A8

A17A

Abstract: tsop datasheet diode a3 TSOP
Contextual Info: HM628100I Series Block Diagram TSOP LSB A5 A6 A7 A4 A3 A9 A10 A11 A12 A13 MSB A14 V CC V SS • • • • • Row decoder I/O0 Memory matrix 2,048 x 4,096 Column I/O • • Input data control Column decoder I/O7 LSB MSB A16 A17A18 A19 A0 A1 A2 A15A8 •

HM628100LTTI-5SL

Abstract: A17a
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

Contextual Info: I/M-IITE /M IC R O ELEC T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 P IN C O N F IG U R A T IO N T O P V IE W L 1 A16 r 2 A15 [7 3 32 A12 4 29 A7C 5 A6 [T 6 A5 E 7

smd A7t

Abstract: smd code A7t
Contextual Info: E g M/HITE / M IC R O E L E C T R O N IC S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES FIG. 1 PIN CONFIGURATION • JEDEC Standard 32 Pin DIP, Hermetic Ceramic Package A18 [I 1 32 A16 C 2

BU-61843

Contextual Info: Make sure the next Card you purchase has. BU-6174X/6184X/6186X ENHANCED MINIATURE ADVANCED COMMUNICATIONS ENGINE [ENHANCED MINI-ACE/µ-ACE MICRO-ACE ] FEATURES • Fully Integrated 1553A/B Notice 2, McAir, STANAG 3838 Interface Terminal • Compatible with Mini-ACE (Plus)

LX50CM4128

Abstract: linvex technology
Contextual Info: LINVEX TECHNOLOGY, CORP. LX50CM4128 512K x 8 Bit ROM and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • Both ROM and RAM in one chip • Wide Operating Voltage Range: 1.8 - 3.3V • Fast Access Time 1.8 V Operation: 500 ns Max.

Contextual Info: LINVEX TECHNOLOGY, CORP. PRELIMINARY LX59CF4128 512K x 8 Bit FLASH and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • • • The LX59CF4128 is a combination memory chip consist of 4M-bit FLASH Memory organized as 512K words by 8 bits and a 1-Meg-bit Static

BU-61843

Contextual Info: Make sure the next Card you purchase has. BU-6174X/6184X/6186X ENHANCED MINIATURE ADVANCED COMMUNICATIONS ENGINE [ENHANCED MINI-ACE/µ-ACE MICRO-ACE ] FEATURES • Fully Integrated 1553A/B Notice 2, McAir, STANAG 3838 Interface Terminal • Compatible with Mini-ACE (Plus)

BU-64843X

Abstract: BU-64843H MN-6186X-002 MILSTD-1773 BU-64843T Mini-ACE Users Guide J-11-J1 MIL-STD-1773 MN-6186X-001 BU-64843
Contextual Info: Make sure the next Card you purchase has. BU-64843X/64863X TOTAL-ACE COMPLETE MIL-STD-1553 SOLUTION DATA SHEET FEATURES • World's First, Fully Integrated, MIL-STD-1553 Terminal & Transformer Solution • Small Package 312 Ball BGA 1.1 in x 0.6 in or 1.1 in x 0.7 in

dss-1005 bu6484

Abstract: dss-1003 bu64863
Contextual Info: Make sure the next Card you purchase has. BU-6474X/6484X/6486X Mini-ACE Mark3/Micro-ACE®*-TE ® FEATURES • Fully Integrated 3.3 or 5.0 Volt, 1553 A/B Notice 2 Terminal • World’s First all 3.3 Volt Terminal • Transceiver Power-Down Options • World’s Smallest CQFP MIL-STD-1553

BU-61860B

Abstract: BU-61843 bu 61865 BU-61743
Contextual Info: Make sure the next Card you purchase has. BU-6174X/6184X/6186X ENHANCED MINIATURE ADVANCED COMMUNICATIONS ENGINE [ENHANCED MINI-ACE /µ-ACE MICRO-ACE® ] ® FEATURES • Fully Integrated 1553A/B Notice 2, McAir, STANAG 3838 Interface Terminal • Compatible with Mini-ACE (Plus)

BU-64863B

Abstract: bu64863 BU-64840B3-E02 DSS-3330 mark s07 BU-61860 BU-64863E8
Contextual Info: Make sure the next Card you purchase has. BU-6474X/6484X/6486X MINI-ACE MARK3/MICRO-ACE®*-TE ® FEATURES • Fully Integrated 3.3 or 5.0 Volt, 1553 A/B Notice 2 Terminal • World’s First all 3.3 Volt Terminal • Transceiver Power-Down Options • World’s Smallest CQFP MIL-STD-1553

8 pin ceramic dip microsemi

Contextual Info: WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES  Automatic Page Write Operation  Read Access Times of 150, 200, 250, 300ns • Internal Address and Data Latches for  JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package

interrupt service in embedded system

Abstract: am29f016 AD0-AD15 AM29F010 Am186ES
Contextual Info: Breaking Through the 1 MByte Address Barrier Using the Am186ES Microcontroller The x86 architecture has come to dominate the microprocessor landscape as the most successful architecture in the world. The 186 is the 16-bit microcontroller version of the x86 architecture and it has had similar success in the 16-bit

WE512K8

Abstract: 128kx8 eeprom
Contextual Info: WE512K8, WE256K8, WE128K8-XCX White Electronic Designs 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FIGURE 1 FEATURES „ Read Access Times of 150, 200, 250, 300ns „ JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package 300

EDI8F8512C

Abstract: EDI8F8512LP EDI8F8512LP100B6C A17-A18
Contextual Info: EDI8F8512C White Electronic Designs 512Kx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION  512Kx8 bit CMOS Static The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate.

Contextual Info: 512K x 8 SRAM MODULE SYS8512FKX-70/85/10/12 Issue 5.0: November 1999 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Features Description The SYS8512FKX is plastic 4M Static RAM Module housed in a standard 32 pin Dual-In-Line package

3B1065

Abstract: 34X2245 s34x245 34X245
Contextual Info: QS34X245Q3, QS34X2245 PRELIMINARY Q High-Speed CMOS QUICkSwitCh Qs34X245q3 QS34X2245Q3 32-Bit MultiWidth Bus Switches FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • • • The QS34X245 is a member of the MultiWidth™ family of QuickSwitch devices and provides a set of

Contextual Info: _ EDI7F32512C m m ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 512Kx32 CMOS Flash EEPROM Module Features The EDI7F32512C is a 5V-0nly In-System Programmable 512Kx32 bit CMOS Flash and Erasable Read Only Memory Module. Organized as Electrically Erasable Programmable

128kx8 eeprom

Contextual Info: WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CMOS EEPROM MODULE FEATURES  Automatic Page Write Operation  Read Access Times of 150, 200, 250, 300ns • Internal Address and Data Latches for  JEDEC Standard 32 Pin, Hermetic Ceramic DIP Package

Contextual Info: Make sure the next Card you purchase has. BU-6474X/6484X/6486X MINI-ACE MARK3/MICRO-ACE®*-TE TM ® FEATURES • Fully Integrated 3.3 or 5.0 Volt, 1553 A/B Notice 2 Terminal • World’s First all 3.3 Volt Terminal • Transceiver Power-Down Options • World’s Smallest CQFP MIL-STD-1553

EDI8F8512C

Abstract: EDI8F8512LP
Contextual Info: EDI8F8512C 512Kx8 STATIC RAM CMOS, MODULE FEATURES DESCRIPTION •512Kx8 bit CMOS Static The EDI8F8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 or 256Kx4 high speed Static RAMs mounted on a multilayered epoxy laminate (FR4) substrate. •Random Access Memory