3E30114 Search Results

Contextual Info: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB

Contextual Info: _ EDI7F8512C ^ED I Electronic Designs Inc. High Performance Four Megabit Flash EEPROM 512Kx8 CMOS Flash EEPROM Module Features The EDI7F8512C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 512Kx8 bits, the module contains four 128Kx8 Flash Memo­

a719

Abstract: EDI411024C 150ni 15trc 1MX1
Contextual Info: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power

9CTI

Abstract: S28B 9CTI 10 pin ic EC017 ED1784MS EDJ7
Contextual Info: EDI784MS V m 4Megx8NAND Flash f lE C T R O M C O CSG N & N C . PRELIMINARY 4Mx8 B it NAND Flash CMOS, Monolithic Features The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

D012

Abstract: D019 D020 D023 EDI8F32128C t462
Contextual Info: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is

S0014

Abstract: TME 57 256KX16 A1526
Contextual Info: ^EDI EDI8F16258C afCTOONC OESGNS. NC '256Kxie SRAM Module 256KX16 Static RAM CMOS Module Features 256Kx16 bit CMOS Static Random Access Memory • Access Times 70,85, and 100ns • Data Retention Function EDI8F16258LP • TTL Compatible Inputs and Outputs

Contextual Info: ^EDI _ ELECTRO NIC DESIGNS IN C EDI7F32128C High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Module r a iy ia iM ï Features The EDI7F32128C is a 5V-0nly In-System Programmable 128Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as

Contextual Info: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

Contextual Info: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This

TME 57

Abstract: a6353 355A4 a2361
Contextual Info: m x EDI9F33256C 256Kx32 SRAM Module ELECTRONIC DESIGNS NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­

DODI151

Abstract: EDI8M8512C EDI8M8512LP
Contextual Info: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­

EDI8L3265C

Abstract: OQ23 "Electronic designs inc"
Contextual Info: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array

20E1

Abstract: A310 G000137
Contextual Info: 3230114 E LE C TR O N IC D E S IG N S 85D IN C ELE CT RON IC DESIGNS INC AS r 00129 DEj B S 3 D i m T -4 6 -2 3 -1 2 0Q0D15T t, | ~ EDH 8808AC 70/10/12/15 LP Monolithic The fu tu re . .today. 8KxS Static RAM CMOS, Low Power Monolithic Features The EDH 8808AC-LP is a high performance, low

256KX16

Abstract: EDI8F16256C
Contextual Info: EDI8F16256C K X '256KX16 SRAM Module GIECTOONC DCSIGNS, NC. 256Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in High Density 4096K-bit CMOS Static

Contextual Info: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell

Contextual Info: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The E D I9 F 3 6 2 5 6 C is a high speed 9 megabit Static R A M 256 K x3 6 bit C M O S Static module organized a s 25 6 K words by 36 bits. Four chip selects E 0 -E 3 are used to independently enable

EDI88128LPS35MC

Abstract: EDI88128LPS25MC 17hs EDI88128CS25TC t1is EDI88128CS EDI88128CS17HC EDI83128 R30P
Contextual Info: E L E C T R ONIC DESIGNS INC ^ E D S1E D • 3230114 0000^45 4bO H E L D I E D I8 8 1 2 8 C S Electronic DMlgra In c . — . . . . . High Performance Megabit Monolithic SRAM

TME 57

Contextual Info: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The EDI9F36256C is a high speed 9 megabit Static RAM 256Kx36 bit CMOS Static module organized as 256K words by 36 bits. Four chip selects E0-E3 are used to independently enable

Contextual Info: ^EDI EDI5M32128C ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128KX32 CMOS EEPROM Module ] gi II Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

dram 4mx4

Abstract: ca713
Contextual Info: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit

A17-A18j

Abstract: 2555N
Contextual Info: ^ EDI EDI8M8512C Electronic Designs Inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­

Contextual Info: EDI9F33256C m x 156Kx32 SRAM Module El£CTKONC CCSÍGNS.NC. 256Kx32 Static RAM CMOS, High Speed Module Features The EDI9F33256C is a high speed 8 megabit Static RAM module organized as 256K words by 32 bits. This module is constructed from eight 256Kx4 Static RAMs in SOJ pack­

A934

Contextual Info: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,