3B30114 Search Results

a719

Abstract: EDI411024C 150ni 15trc 1MX1
Contextual Info: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power

Contextual Info: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash

Contextual Info: EDI7F81024C ELECTRONIC DESIGNS IN C .- High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The ED17F81024C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­

Contextual Info: ^EDI EDI9F36256C ELECTRONIC DESIGNS MC. I 256Kx36 SRAM Module 256Kx36 CMOS High Speed Static RAM Features The E D I9 F 3 6 2 5 6 C is a high speed 9 megabit Static R A M 256 K x3 6 bit C M O S Static module organized a s 25 6 K words by 36 bits. Four chip selects E 0 -E 3 are used to independently enable

Flash SIMM 80 programmer

Abstract: 80 pin simm flash programmer flash simm module programmer
Contextual Info: ^EDI EDÎ7F32256C 256Kx32 Flash Module ELECTRONIC DtSIGNS. N C | 256Kx32 Flash Module Features 256Kx32 CMOS Flash Module The EDI Flash Family is a five-volt—only in system Flash program­ Fast Read Access Time-100ns mable and erasable read only memory module. The modules are

A934

Contextual Info: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,