EDI7F81024C Search Results

Contextual Info: ^EDI EDI7F81024C ELECTRONIC DESIGNS INC. High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module The ED17F81024C isa5V-0nly In-System Programmable and Erasable Read Only Memory Module. raiuiiosMCT Features Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­

Contextual Info: EDI7F81024C ELECTRONIC DESIGNS IN C .- High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The ED17F81024C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains eight 128Kx8 Flash Memo­

Contextual Info: ^EDI EDI7F81024C ELECTRONIC DESIGNS INC. • High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The EDI7F81024C is a 5V-0nly In-System Program­ mable and Erasable Read Only Memory Module. Orga­ nized as 1Megx8 bits, the module contains eight 128Kx8

Contextual Info: ^EDI EDI7F81024C ELECTRONIC DESIGNS INC. • High Performance Eight Megabit Flash EEPROM 1Megx8 CMOS Flash EEPROM Module Features The EDI7F81024C is a 5V-0nly In-System Program­ 1Megx8 bit CMOS Flash mable and Erasable Read Only Memory Module. Orga­ Electrically Erasable Programmable

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Contextual Info: WDI Table of Contents ELECTRONIC DESIGNS INC ^ l i s abbreviated data book is intended as a supplennent to EDI's Databook '93. All new products, not included in that issue, are identified by the symbol shown here. The product descriptions, pinouts, block diagrams

256KX8 SIMM

Abstract: 80 pin simm flash
Contextual Info: WDl Selector Guide ELECTRONIC DESIGNS INC. Density Organization Part No. Speed ns NEW Max Current (mA) ICC1 ICC3 ✓ ✓ V ✓ 256Kx8 2 2 4 4 256Kx8 256Kx8 512Kx8 512Kx8 512Kx8 Megabits Megabits Megabits Megabits EDI8F8257C-B6ClP EDI8F8257C-BPCLP EDI8F8259C-M6C

80 pin simm flash

Abstract: 45/EDI8F16256C-M
Contextual Info: \ Selector Guide ELECTRONIC DESI3NS INC Of nsity Organization Part No. Speed ns NEW ✓ ✓ ✓ ✓ Page LP Signifies that a Low Power Version with Data Retention function is available x8 SRAMs ✓ Package Max Current (mA) ICC1 ICC3 2: Megabits 256KX8 EDI8F8257C-B6CLP