323G114 Search Results

D012

Abstract: D019 D020 D023 EDI8F32128C t462
Contextual Info: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is

Contextual Info: ^EDI ELECTRONIC DESIGNS INC 30E D E l t e k o o le O t s l g n i I n c . . • 323G114 OOOQbTb Ö ■ EDI8F8257C/LP/P Commercial Two Megabit S R AM Module 256Kx8 Static R A M C M O S, Module Features The EDI8F8257C/LP/P is a 2 megabit CM OS Static RAM based on two 128Kx8 Static RAMs mounted on a

A14-A6

Contextual Info: ELECTRONIC D E S I G N S INC 3QE D • 323G114 OQQQSÖS T ■ EDI81256C/LP/P _ ß«olronle Dtilgnt Inc. High Speed 256K Monolithic SRAM 256Kx1 Static RAM CMOS High Speed Monolithic , Features The EDI81256C/LP/P is a262,144bithighperformance, low power CMOS Static RAM organized as 256Kx1.

Contextual Info: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

Contextual Info: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB

Contextual Info: EDI88128C ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88128C is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. The device is also available as EDI88130C with an

Contextual Info: E L E C T R O N I C D E S I G N S I N C 71 3 2 3 D 1 1 4 □ □ □ □ □ 3 4 b T ' 13 " 2 7 EDH 51664-35/45 MILITARY 64K x 16 EEPROM ELECTRONIC DESIGNS INC. PINOUTS VSS A7 A8 A9 T h e 5 1 6 6 4 is a f u l l y b u f f e r e d 1M b i t E E P R O M m o d u l e c o n s i s t i n g

Contextual Info: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM

Contextual Info: ^EDI EDI88512C ELECTRONIC DESIGNS INC. Four Megabit Monolithic SRAM 512Kx8 Static RAM r a i u i i i M c w CMOS, Monolithic Features The EDI88512C is a 4 megabit Monolithic CMOS Static RAM. The 32 pin DIP pinout adheres to the JEDEC stan­ dard for the four megabit device and is a pin for pin

a719

Abstract: EDI411024C 150ni 15trc 1MX1
Contextual Info: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power

EDI84256LPS25TB

Abstract: EDI84256CS25TB EDI84256LPS35TB p 32 lcc 300 r EDI84256CS EDI84256CS25LB EDI84256CS35LB EDI84256LPS25LB EDI84256LPS35LB
Contextual Info: EDI84256CS ^ EDI ELECTRONIC DESIGNS INC. High Performance Megabit Monolithic SRAM 256Kx4 Monolithic CMOS Static RAM, High Speed Features The EDI84256CS isa high speed, high performance, megabit density monolithic Static RAM organized as 256Kx4 bits. Inputs and outputs are TTL compatible and allow for

vinavil 59

Abstract: TME 57
Contextual Info: ^EDI EDI9F416128C ELECTRONIC CCSGNS W Ci 4x128Kx16 SRAM Module 4x128Kx16 Static RAM CMOS, Module Features 4x128Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416128LP • TTL Compatible Inputs and Outputs

Contextual Info: W EDI8F2432C 5 À 32Kx24 SRAM Module ELECTRONIC DESIGNS N C 32Kx24 Static RAM CMOS, High Speed Module Features 32Kx24 bit CMOS Static The EDI8F2432C is a high speed 750Kbit Static RAM Random Access Memory module organized as 32Kx24. This module is constructed

Contextual Info: _ EDI7F32512C m m ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM 512Kx32 CMOS Flash EEPROM Module Features The EDI7F32512C is a 5V-0nly In-System Programmable 512Kx32 bit CMOS Flash and Erasable Read Only Memory Module. Organized as Electrically Erasable Programmable

Contextual Info: EDI784MS V ^E D I 4Megx8NAND Flash flE C T B O M C OESGN& WC. PRELIMINARY 4Mx8 Bit NAND Flash CMOS, Monolithic F eatu res The EDI784MSV is a 4M 4,194,304 x8 bit NAND Flash memory with a spare array of 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for high density

A723

Abstract: EDI8M3264C 64kx4
Contextual Info: EDI8M3264C ELECTRONIC DESIGNS INC. • High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8M3264C is a high speed 2 megabit Static RAM module organized as 64Kx32. This module is con­ structed from eight 64Kx4 Static RAMs in LCC packages on

EDI8L3265C

Abstract: OQ23 "Electronic designs inc"
Contextual Info: ^EDI EDI8L3265C ELECTRONIC DESIGNS INC. High Performance Two Megabit SRAM 64Kx32 CMOS High Speed Static RAM O IM F O ^ IiS \T I i Features The EDI8L3265C is a high speed, high performance, 64Kx32 bit CMOS Static four megabit density Static RAM organized as a 64Kx32 bit Random Access Memory Array

Contextual Info: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

Contextual Info: _ EDI8F2464C m o i Electronic Designs Inc.1 High Speed 1.5 Megabit SRAM Module 64Kx24 Static RAM CMOS; High Speed Module Features The EDI8F2464C is a high speed 1.5 megabit Static RAM module organized as 64Kx24. This module is 64Kx24 bit CMOS Static

ed188130

Abstract: EDI88130CS25CB EDI88130CS20TB EDI88130CS OD020
Contextual Info: EDI88130CS ^EDI Electronic Designs Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

dram 4mx4

Abstract: ca713
Contextual Info: EDI4M44096C M £Á ELECTRONIC DESIGNS INC. • High Performance 16 Megabit DRAM 4Mx4 Dynamic RAM CMOS, Multichip Microcircuit The EDI4M44096C is a high performance, low power CMOS Dynamic RAM Multichip Microcircuit organized as 4 Megabits x4. This device is based on four megabit

Contextual Info: ^EDI _ EDI8F8259C Electronic Designs Inc. Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

11DQ07

Contextual Info: ^EDI EDI8F32123C ELECTRONIC DESIGNS, N C . I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM

Contextual Info: 53EDI EDI7M32128C ELECTRONIC DESIGNS INC. High Performance Four Megabit Flash EEPROM Module 128Kx32 CMOS EEPROM Module Features The EDI7M32128C is a high speed, high perform­ ance, four megabit density Flash EEPROM module organized as 128Kx32 bits. The module has four