T462 Search Results

Contextual Info: ]>i| 02S7S2Ö OOSSSÖS T ADV MICRO -CMEMORY} 0257528 ADV M I C R O MEMORY 89D 25 585 T dfi q S" Am27LS07 flft T462308 64-Bit Low-Power Noninverting-Output Bipolar RAM Ï DISTINCTIVE CHARACTERISTICS • • Fully decoded 16-word x 4-bit low-power Schottky

tms4256

Abstract: TMS4266
Contextual Info: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)

ltl17

Contextual Info: flTblTSS 0 0 7 7 0 0 2 0 TM4256FC1 1,048,576 BY 1B IT DYNAMIC RAM MODULE INS TR A SIC /MEMORY OCTOBER'19 9 5 —REVISED FEBRUARY 1988 BSE D 1 ,0 4 8 ,5 7 6 x 1 Organization TM 4266FC 1 . . C SINGLE-IN-LINE PACKAGE (TOP VIEW) Single 5-V Supply (10 % Tolerance)

NZ70

Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
Contextual Info: TOSHIBA -CLOGIC/MEMORY} 14E D • i-DTVEMß DOlfiTOS S ■ T -46-23-15 TOSHIBA MOS MEMORY PRODUCTS TC511001AP/AJ/AZ-70, TG511001 AP/AJ/flZ-80 TC511001AP/AJ/AZ-10 DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by

Contextual Info: 4TE Preliminary D WÊ S ô b ô M S b iiiiH im n hatra QDD2n3 r n TM3 • M t l H S January 1991 n h s M-65864 DATA SHEET 8,192x8 STATIC RAM FE A TU R ES LOW STANDBY POWER -2 0 0 mW TTL-COMPATIBLE INPUTS AND OUTPUTS CAPABLE OF WITHSTANDING GREATER THAN 2001V ELECTROSTATIC DISCHARGE

C1663

Abstract: ci685 7C168 CY7C169 016A6 CY7C168 c16s1 cypress jib 4096X4
Contextual Info: MbE D ssfl^bbs Doobso? a cacYP CY7C168 CY7C169 ^ L / 4- i V O â •*î ^ Features a ’c y pr e ss SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — tAA = 25 ns — tACE = lSns(7C169)

0148-t

Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
Contextual Info: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese­ lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)

tle 6261 g

Abstract: AoL-12L S-108 SEM 238 TLE TSOP CY7B144 CY7B145 B08L
Contextual Info: 4bE D CYPRESS SEMICONDUCTOR • ESfi^bbS 00ab3SG 2 E3CYP 'T-% -Zl> -\ Z_ PRELIMINARY & CYPRESS ill — ^ s ? SEMICONDUCTOR 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-mlcron BiCMOS for high per­ formance • High-speed access

TP 152N

Abstract: CI23 k7315 2A mosfet igbt driver stage as256words CY7C123
Contextual Info: MbE D CYPRESS SEMICONDUCTOR E3 2 S 0 ciL.iJ2 D D O b B I R 7 C l C Y P CY7C123 CYPRESS SEMICONDUCTOR Functional Description 256 x 4 static RAM for control store in high-speed computers CMOS foroptimum speed/power High speed — 7 ns commercial — 10 ns (military)

7C192-12

Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power

1S26

Abstract: P4C116 P4C116L AD5e
Contextual Info: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)

SSC 9101

Abstract: c494 223A10
Contextual Info: EbE D CYPRESS mg • ssa^bba 0004401 y ■ SEMICONDUCTOR CYPRESS . : PRELIM INARY i - •••••• ^ SEMICONDUCTOR T ^ U S -iO CY1E494 JÇŸÎ5SÎÎ1 CY100E494 ■ ■■ . 16,384 x 4 ECL Static RAM • Open em itter output for ease of memory expansion

27LS02

Abstract: AM27LS03 AM27LS03-30/BEA
Contextual Info: ADV M I C R O {MEflORY} &*\ D e 05 5 7 5 2 0 00BS553 7 0257528 ADV MICRO (MEMORY 890 25553 D T-46-23-08 Am 27LS02/Am 27LS03 H 64-Bit Low-Power Inverting-Output Bipolar RAM > 3 DISTINCTIVE CHARACTERISTICS Fully decoded 16 word x 4-bit low-power Schottky

CY7C171-45VC

Abstract: 7C172-35 CY7C171-35PC CY7C171-45DMB A10C CY7C171 CY7C172 7C171-25 CY7C172-35PC 2272 aq
Contextual Info: 4 bE D • 23 3 *^ 2 QDOtSBB =5 E ICYP *0VH <O -V?<y& s? CYPRESS SEMICONDUCTOR CY7C171 CY7C172 4096 x 4 Static R/W RAM Separate I/O R eading th e device is accom plishedby tak­ ing chip enable CE LOW, while write en­ able (W E) remains H IG H . U nder these con­

A10C

Abstract: CY7C170 C1702 7C170 SA78
Contextual Info: 4bE » n QDGbSS3 b • ICYP 256^2 CY7C170 *»■> sÆ CYPRESS _ g SEMICONDUCTOR 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • H ighspeed The CY7C170 is a high-performance CMOS static RAM organized as 4096

Contextual Info: FEATURES • Low-power, high-performance CMOS process • Multiplexed address inputs • 262,144 words x 4-bit organization • Read-Modify-Write capabilities • 120/150 ns access time from RE • CE before RE auto refresh • 60/75 ns access time from CE

Contextual Info: ADV MICRO {MEMORY} fli 0257528 ADV MICRO MEMORY D E § 0557520 0055515 1 89D f-4 6 -2 3 -0 8 üf 25595 Am27S07 64-Bit Noninverting-Output Bipolar RAM > 3 PO DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16-word x 4-bit low power Schottky RAMs Internal ECL circuitry for optimum speed/power perfor­

Contextual Info: 14E D TOSHIBA { LO GI C/ME MO RY } ‘ìD'ìTSMfl D Q n n i S TOSHIBA MOS MEMORY PRODUCTS TC55257APL-85/APL-10/APL-12 TC55257AFL-85/AFL-10/AFL-12 ¡d e s c r i p t i o n ] The TC55257APL is 262,144 bit static random access memory organized as 32,768 words

Contextual Info: ELHO SEMICONDUCTOR CORP 43E ELMO D • aSTGSbM 0GÜGQ33 «ESCC EMC01MS08 CMOS STATIC RAM MODULE: 128K x 8 DESCRIPTION The ELMO EMC01MS08 is a 131,072-word x 8-bit high speed CMOS static RAM module suitable for use in low power and high speed applications. It

Contextual Info: FUJITSU M I C R O E L EC TR ON IC S 23E D • 374T7b2 ODOflltl 3 ■ E C ^ 1 0 2 4 IB IT » FUJITSU BIPOEEAR RANDÖI ACCESS MEMOR MBM 100422A-5 MBM 100422A-7 T-<4t>-ZVOg April 1987 Edition 3.Ô 1024-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100422A Is fully decoded 1024-bit EC L read/write random

Contextual Info: SIE MM^baOB 001ÖÖ57 ISS • H I T 2 D HM5116100 Series Preliminary 16,777,216-Word x 1-Bit Dynamic Random Access Memory ■ H IT A C H I/ d e s c r ip t io n LO G IC/ARR AYS/flEM HM5116100J Senes The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word x

Contextual Info: FUJITSU M I CR OELE CT RO NI CS 23E D F U JIT S U 374T7fa2 0QQÖ3S5 S M B M 1 0 0 4 8 4 A -8 —r - » / / / T ^ h ? " 2 .3 > - 0 8 August 1988 Edition 2.0 16384-BIT BIPPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 100484A is fully decoded 16384-bit E C L read/write random

Contextual Info: FUJITSU M I CRO EL EC TR ON IC S FU JITSU 23E D • 3?417fa2 OODÄHSS T BIPOCAR RANDOM* ACCESS M EM O R Y MBM10480A-10 -OS May 1988 Edition 1.0 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM10480A Is a fuSy decoded 16384-blt ECL read/w rite random access

Contextual Info: 4,194,304 WORD X 1 BIT'DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100JL/ZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as