CY7C192 Search Results

7C192-12

Abstract: 7C192-15 7C192-20 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: MbE D CYPRESS SEMICON DUC TOR B 250^fc,b2 OOQfc.1,42 3 E 3 C Y P CY7C191 CY7C192 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C19X • CMOS for optimum speed/power • H ighspeed — tM = 25 ns • Low active power

7C192-12

Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: CY7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C191 and CY7C192 are high­ perform ance CM OS static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­

c1918

Abstract: C1915 CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1914
Contextual Info: 1CY 7C19 2 CY7C191 CY7C192 64K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enable CE and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected.

Contextual Info: CY7C191 CY7C192 " ^ cÌ press SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • High speed — ‘ a a = 2 5 ns • Low active power — 880 raW • Low standby power 65,536 x 4 Static R/W RAM

Contextual Info: CY7C192 64 K x 4 Static RAM with Separate IO 64 K × 4 Static RAM with Separate IO Features Functional Description • High speed ❐ 15 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 860 mW The CY7C192 is a high performance CMOS static RAM

93191

Abstract: sumitomo 6300h mold compound CY7C191 CY7C192 CY7C194 CY7C195 CY7C196 CY7C197 CY7C198 CY7C199
Contextual Info: PAGE 1 CYPRESS SEMICONDUCTOR Qualification Report July, 1994, QTP#93192/93191, Version 2.4 256K SRAM, RAM 2.1 SHRINK MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4 Separate IO with transparent write CY7C192 64K x 4 Separate IO without transparent write

Contextual Info: CY7C191 CY7C192 PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — 12 ns • Transparent write 7C191 • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

Contextual Info: CYPRESS CY7C192 64K x 4 Static RAM with Separate I/O pansion is provided by active LOW Chip Enable CE and three-state drivers. It has an automatic power-down feature, reducing the power consumption by 75% when deselected. Features • High speed — 12 ns

Contextual Info: CY7C191 CY7C192 b m - . C Y PR ESS r SEMICONDUCTOR Features • Automatic power-down when deselected • Transparent write 7C191 • CMOS for optimum speed/power • Highspeed — tAA = 25 ns • Low active power — 880 mW • Low standby power

Contextual Info: CY7C192 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C192 is a high-performance CMOS static RAM organized as 65,536 x 4 bits with separate I/O. Easy memory expansion is provided by active LOW Chip Enable CE and

CY7C191

Abstract: CY7C192 CY7C192-15VC CY7C192-15VXC
Contextual Info: CY7C192 64K x 4 Static RAM with Separate IO Features Functional Description • High speed ❐ 15 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 860 mW The CY7C192 is a high performance CMOS static RAM organized as 65,536 x 4 bits with separate IO. Easy memory

7C192-12

Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: CY7C191 CY7C192 if CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed — 12 ns • Transparent write CY7C191 • CMOS for optimum speed/power • Low active power T he CY7C191 and CY7C192 are highperform ance CM OS static RAM s orga­

Contextual Info: CY7C192 64K x 4 Static RAM with Separate I/O Features expansion is provided by active LOW Chip Enable CE and three-state drivers. It has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the Chip Enable

Contextual Info: CY7C192 64 K x 4 Static RAM with Separate IO Features Functional Description • High speed ❐ 15 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 860 mW The CY7C192 is a high performance CMOS static RAM organized as 65,536 x 4 bits with separate IO. Easy memory

7C192-12

Abstract: 7C192-15 7C192-20 CY7C191 CY7C192
Contextual Info: bSE SEMICONDUCTOR » SSfl'ibhE OOIOGIE 243 M C Y P CY7C191 CY7C192 PRELIMINARY r^ y p p rc q = SEMICONDUCTOR 64K x 4 Static RAM with Separate I/O Features Functional Description • H ighspeed — 1 2 ns • T ransparent write 7C191 • CMOS for optim um speed/power

CY7C192-25PC

Contextual Info: CY7C192 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed The CY7C192 is a high-performance CMOS static RAM organized as 65,536 x 4 bits with separate I/O. Easy memory expansion is provided by active LOW Chip Enable CE and

C1918

Abstract: C1915 I0-I13 CY7C192 CY7C192-12PC 7C192-12 7C192-15 7C192-20 C191 CY7C192-25PC
Contextual Info: CY7C192 64K x 4 Static RAM with Separate I/O Features pansion is provided by active LOW Chip Enable CE and three-state drivers. It has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns • CMOS for optimum speed/power

7C191

Contextual Info: CY7C191 CY7C192 CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed — 1 2 ns The CY7C191 and CY7C192 are highperform ance CM O S static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy memory expansion i s provided by ac­

Contextual Info: CY7C192 64 K x 4 Static RAM with Separate IO 64 K × 4 Static RAM with Separate IO Features Functional Description • High speed ❐ 15 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 860 mW The CY7C192 is a high performance CMOS static RAM

Contextual Info: CY7C191 CY7C192 V CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed — 12 ns T he CY7C191 and CY7C192 are highperform ance CM O S static RA M s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­

K/CY7C192-45M

Contextual Info: CY7C192 64 K x 4 Static RAM with Separate IO 64 K × 4 Static RAM with Separate IO Functional Description Features • High speed ❐ 15 ns ■ CMOS for optimum speed/power ■ Low active power ❐ 860 mW The CY7C192 is a high performance CMOS static RAM

CY7C191

Abstract: CY7C192 CY7C194 CY7C196 CY7C197 CY7C198 CY7C199
Contextual Info: Qualification Report June 1992, QTP 92062 Version 3.1 256K SRAM FAB 3 QUALIFICATION MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4, Seperate I/O, Transparent Write, Static RAM CY7C192 64K x 4, Seperate I/O, Static RAM CY7C194 64K x 4, Static RAM

Contextual Info: CY7C191 CY7C192 f ' 1Y P P T 7 C C SEMICONDUCTOR F eatures • Automatic power-down when deselected • Transparent write 7C19I • CMOS for optimum speed/power • High speed — U a = 2 s ns • Low active power — 660 mW • Low standby power — 193 mW

C1915

Abstract: CY7C192-25PC 7C192-12 7C192-15 C191 CY7C191 CY7C192 C1919
Contextual Info: CY7C191 CY7C192 64K x 4 Static RAM with Separate I/O Features Easy memory expansion is provided by active LOW chip enable CE and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed