CY7C194 Search Results

Contextual Info: CY7C194BN 256 Kb 64K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C194BN is available in 24 DIP, 24 SOJ packages.

ALPHA SOLDER datasheet

Abstract: ALPHA SOLDER CY7C194 CY7C195 CY7C199 JESD22
Contextual Info: Qualification Report December 1996, QTP# 96144, Version 1.1 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

R910A

Contextual Info: C Y 7 C 1 9 4 C Y 7 C 1 9 5 p yp: v « *1 X X C Y 7 C 1 9 6 - 64K x 4 Static RAM Easy memory expansion is provided by active LOW chip en­ a b le ^ UE on the CY7C194 and CY7C195, C E 1, C E 2 on the CY7C196) and three-state drivers. They have an automatic

C1942

Abstract: cy7c194
Contextual Info: 96 CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed

Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Functional Description • High speed — 12 ns • Output enable OE feature (7C19S and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

MMA6

Abstract: MO088
Contextual Info: CY7C194BN 256 Kb 64K x 4 Static RAM General Description [1] Features • Fast access time: 15 ns and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • CY7C194BN is available in 24 DIP, 24 SOJ packages.

j0318

Abstract: 7c194
Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Features 64K x 4 Static RAM write enable WE inputs are both LOW. D ata on the four input pins (I/Oo through I/O3) is written into the memory location, specified on the address pins (Ac through Functional Description

Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS Features 64K x 4 Static RAM Functional Description • High speed — 12 ns • Output enable OE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM 256 Kb (64 K × 4) Static RAM Features General Description • Fast access time: 15 ns The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64 K × 4 bits that supports an asynchronous memory interface. The device features an automatic

C1947

Abstract: C194 C1945 C1943 7C196 CY7C194 CY7C195 CY7C196 C1944 CY7C194-25PC
Contextual Info: CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs

C1945

Abstract: C1948 CY7C195 CY7C196 7C196 CY7C194 C1947
Contextual Info: 96 CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed

CY7C199

Abstract: EME-6300H JESD22 MP-8000
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97476 VERSION 1.0 December, 1997 32K x 8 Static RAM CY7C194/CY7C195/CY7C199 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Kim Nguyen Staff Reliability Engineer 408 943-2136 Cypress Semiconductor 256K Static RAM, R28 Process, Fab 2 Qualification

CY7C194

Abstract: CY7C195 CY7C199 reliability test data
Contextual Info: Qualification Report December 1996, QTP# 95364, Version 1.1 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

Hitachi 32k static RAM

Abstract: CY7C192 CY7C197 CY7C199 top markings on hitachi 256k Static RAM SOJ package MSL
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99011 VERSION 1.0 April, 1999 256K Static RAM, R28 Technology, Fab 2 CY7C191/192 64K x 4 Static RAM With Separate I/O CY7C194/195/196 64K x 4 Static RAM CY7C197 256K x 1 Static RAM CY7C199 32K x 9 Static RAM

EME-6300H

Abstract: Omedata CY7C194 CY7C195 CY7C199 28-pin SOJ SRAM
Contextual Info: Qualification Report February 1995 - QTP# 94453 Version 1.0 256K SRAM, R28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Common IO with no OE CY7C195 64K x 4 Common IO with OE and CY7C199 32K x 8 SRAM PRODUCT DESCRIPTION for qualification

CY7C194

Abstract: CY7C195 CY7C199 EME-6300H
Contextual Info: Qualification Report December 1996 - QTP# 95149 Version 1.1 256K SRAM, R28 TECHNOLOGY, FAB 4 QUAL MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification

automatic change over switch circuit diagram

Abstract: CY7C195-15VC CY7C196 7c196 CY7C194 CY7C195
Contextual Info: 1CY 7C19 6 CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features Easy memory expansion is provided by active LOW chip enable s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75%

cl96

Abstract: D-5200 7C196 A12C CY7C194 CY7C195 CY7C1-95 CY7C196 Cypress 7c194 ZP10
Contextual Info: CY7C194 CY7C195 CY7C196 *0 C Y PR ESS 64K x 4 Static RAM Features Functional Description • High speed — 12 ns • Output enable OE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW

C1948

Abstract: CY7C194 CY7C195 CY7C196 7C196
Contextual Info: CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns

1226J

Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS 64K x 4 Static RAM Features Functional D escription • High speed — 12 ns • Output enable ÜE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW

A1491-6

Abstract: CY7C194BN CY7C194BN-15PC CY7C194BN-15VC CY7C194BN-25VC
Contextual Info: CY7C194BN 256 Kb 64K x 4 Static RAM General Description [1] Features • Fast access time: 15 ns and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • CY7C194BN is available in 24 DIP, 24 SOJ packages.

7C196

Abstract: A12C CY7C194 CY7C195 CY7C196 Cypress 7c194 87C196 exxx
Contextual Info: CY7C194 CY7C195 CY7C196 *0 C Y P R E SS 64K x 4 Static RAM Features Functional Description • High speed — 12 ns • Output enable OE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW

CY7C191

Abstract: CY7C192 CY7C194 CY7C196 CY7C197 CY7C198 CY7C199
Contextual Info: Qualification Report June 1992, QTP 92062 Version 3.1 256K SRAM FAB 3 QUALIFICATION MARKETING PART NUMBER DEVICE DESCRIPTION CY7C191 64K x 4, Seperate I/O, Transparent Write, Static RAM CY7C192 64K x 4, Seperate I/O, Static RAM CY7C194 64K x 4, Static RAM