CY7C195 Search Results

ALPHA SOLDER datasheet

Abstract: ALPHA SOLDER CY7C194 CY7C195 CY7C199 JESD22
Contextual Info: Qualification Report December 1996, QTP# 96144, Version 1.1 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

R910A

Contextual Info: C Y 7 C 1 9 4 C Y 7 C 1 9 5 p yp: v « *1 X X C Y 7 C 1 9 6 - 64K x 4 Static RAM Easy memory expansion is provided by active LOW chip en­ a b le ^ UE on the CY7C194 and CY7C195, C E 1, C E 2 on the CY7C196) and three-state drivers. They have an automatic

C1942

Abstract: cy7c194
Contextual Info: 96 CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed

Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Functional Description • High speed — 12 ns • Output enable OE feature (7C19S and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

j0318

Abstract: 7c194
Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Features 64K x 4 Static RAM write enable WE inputs are both LOW. D ata on the four input pins (I/Oo through I/O3) is written into the memory location, specified on the address pins (Ac through Functional Description

Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS Features 64K x 4 Static RAM Functional Description • High speed — 12 ns • Output enable OE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

C1947

Abstract: C194 C1945 C1943 7C196 CY7C194 CY7C195 CY7C196 C1944 CY7C194-25PC
Contextual Info: CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns

C1945

Abstract: C1948 CY7C195 CY7C196 7C196 CY7C194 C1947
Contextual Info: 96 CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed

CY7C199

Abstract: EME-6300H JESD22 MP-8000
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97476 VERSION 1.0 December, 1997 32K x 8 Static RAM CY7C194/CY7C195/CY7C199 CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Kim Nguyen Staff Reliability Engineer 408 943-2136 Cypress Semiconductor 256K Static RAM, R28 Process, Fab 2 Qualification

CY7C194

Abstract: CY7C195 CY7C199 reliability test data
Contextual Info: Qualification Report December 1996, QTP# 95364, Version 1.1 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

CY7C194

Abstract: CY7C195 CY7C199 JESD22
Contextual Info: Qualification Report December 1996 QTP# 96071/96082, Version 2.1 256K SRAM - RAM28 TECHNOLOGY - 6% SHRINK MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification

EME-6300H

Abstract: Omedata CY7C194 CY7C195 CY7C199 28-pin SOJ SRAM
Contextual Info: Qualification Report February 1995 - QTP# 94453 Version 1.0 256K SRAM, R28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Common IO with no OE CY7C195 64K x 4 Common IO with OE and CY7C199 32K x 8 SRAM PRODUCT DESCRIPTION for qualification

CY7C194

Abstract: CY7C195 CY7C199 EME-6300H
Contextual Info: Qualification Report December 1996 - QTP# 95149 Version 1.1 256K SRAM, R28 TECHNOLOGY, FAB 4 QUAL MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification

automatic change over switch circuit diagram

Abstract: CY7C195-15VC CY7C196 7c196 CY7C194 CY7C195
Contextual Info: 1CY 7C19 6 CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features Easy memory expansion is provided by active LOW chip enable s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75%

C1948

Abstract: CY7C194 CY7C195 CY7C196 7C196
Contextual Info: CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and CY7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns

1226J

Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS 64K x 4 Static RAM Features Functional D escription • High speed — 12 ns • Output enable ÜE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW

7C196

Abstract: A12C CY7C194 CY7C195 CY7C196 Cypress 7c194 87C196 exxx
Contextual Info: CY7C194 CY7C195 CY7C196 *0 C Y P R E SS 64K x 4 Static RAM Features Functional Description • High speed — 12 ns • Output enable OE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW

CY7C194

Abstract: CY7C195 CY7C199
Contextual Info: Qualification Report December 1996 QTP# 95365/96082, Version 1.3 256K SRAM - RAM28 TECHNOLOGY - 6% SHRINK MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification

Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7CI95 and 7C196) • CMOS for optimum speed/power • High speed - t\A = 25 ns • Low active power - 660 mW • Low standby power

CY7C194B-15PC

Abstract: CY7C194B-15VC CY7C195 CY7C195B CY7C195B-12VC CY7C195B-15VC CY7C194B
Contextual Info: CY7C194B CY7C195B 256 Kb 64K x 4 Static RAM General Description1 Features • Fast access time: 12 ns, 15 ns, and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Available in 24 DIP, 24 SOJ, 28 DIP, and 28 SOJ

Contextual Info: CY7C194 CY7C195 CY7C196 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected Output Enable OE feature (7C195 and 7C196) CMOS for optimum speed/power High speed — tAA = 25 ns Low active power — 880 mW Low standby power — 220 mW TTL-compatible inputs and outputs

C1941

Abstract: 11l02 7C196 A10C A12C CY7C194 CY7C195 CY7C196 CY7C194-25PC CA1410
Contextual Info: C Y 7 C 194 C Y 7 C 195 C Y 7 C 196 CYPRESS 64K x 4 Static RAM a b le ^ CE on the CY7C194 and CY7C195, CE-|, CE 2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected.

CY7C194B

Abstract: CY7C194B-15PC CY7C194B-15VC CY7C195 CY7C195B CY7C195B-12VC CY7C195B-15VC
Contextual Info: CY7C194B CY7C195B 256 Kb 64K x 4 Static RAM General Description1 Features • Fast access time: 12 ns, 15 ns, and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • Available in 24 DIP, 24 SOJ, 28 DIP, and 28 SOJ

c1947

Abstract: C1943 7C196 CY7C194 CY7C195 CY7C196 C1945 c1946 a8426 A9525
Contextual Info: CY7C194 CY7C195 CY7C196 64K x 4 Static RAM Features 12 ns Output enable OE feature (7C195 and 7C196) 880 mW Low standby power 220 mW TTL Ćcompatible inputs and outputs Automatic powerĆdown when deselected Logic Block Diagram Pin Configurations INPUT BUFFER