7C195 Search Results

Contextual Info: CY7C194 7C195 CY7C196 CYPRESS Features 64K x 4 Static RAM Functional Description • High speed — 12 ns • Output enable OE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

cl96

Abstract: D-5200 7C196 A12C CY7C194 CY7C195 CY7C1-95 CY7C196 Cypress 7c194 ZP10
Contextual Info: CY7C194 7C195 CY7C196 *0 C Y PR ESS 64K x 4 Static RAM Features Functional Description • High speed — 12 ns • Output enable OE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW

1226J

Contextual Info: CY7C194 7C195 CY7C196 CYPRESS 64K x 4 Static RAM Features Functional D escription • High speed — 12 ns • Output enable ÜE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW

7C196

Abstract: A12C CY7C194 CY7C195 CY7C196 Cypress 7c194 87C196 exxx
Contextual Info: CY7C194 7C195 CY7C196 *0 C Y P R E SS 64K x 4 Static RAM Features Functional Description • High speed — 12 ns • Output enable OE feature (7C195 and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW

Contextual Info: CY7C194 7C195 CY7C196 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected Output Enable OE feature (7C195 and 7C196) CMOS for optimum speed/power High speed — tAA = 25 ns Low active power — 880 mW Low standby power — 220 mW TTL-compatible inputs and outputs

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

c1947

Abstract: C1943 7C196 CY7C194 CY7C195 CY7C196 C1945 c1946 a8426 A9525
Contextual Info: CY7C194 7C195 CY7C196 64K x 4 Static RAM Features 12 ns Output enable OE feature (7C195 and 7C196) 880 mW Low standby power 220 mW TTL Ćcompatible inputs and outputs Automatic powerĆdown when deselected Logic Block Diagram Pin Configurations INPUT BUFFER

P13V

Contextual Info: CY7C194 7C195 CY7C196 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected Output Enable OE feature (7C195 and 7C196) CMOS for optimum speed/power High speed — t,\A “ 25 ns Low active power — 880 mW Low standby power — 220 mW TTL-compatible inputs and outputs

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

Contextual Info: CY7C194BN 256 Kb 64K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C194BN is available in 24 DIP, 24 SOJ packages.

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

R910A

Contextual Info: C Y 7 C 1 9 4 C Y 7 C 1 9 5 p yp: v « *1 X X C Y 7 C 1 9 6 - 64K x 4 Static RAM Easy memory expansion is provided by active LOW chip en­ a b le ^ UE on the CY7C194 and 7C195, C E 1, C E 2 on the CY7C196) and three-state drivers. They have an automatic

C1942

Abstract: cy7c194
Contextual Info: 96 CY7C194 7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and 7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed

Contextual Info: CY7C194 7C195 CY7C196 CYPRESS SEMICONDUCTOR Functional Description • High speed — 12 ns • Output enable OE feature (7C19S and 7C196) • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs

MMA6

Abstract: MO088
Contextual Info: CY7C194BN 256 Kb 64K x 4 Static RAM General Description [1] Features • Fast access time: 15 ns and 25 ns • Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) • CMOS for optimum speed/power • TTL-compatible inputs and outputs • CY7C194BN is available in 24 DIP, 24 SOJ packages.

j0318

Abstract: 7c194
Contextual Info: CY7C194 7C195 CY7C196 CYPRESS SEMICONDUCTOR Features 64K x 4 Static RAM write enable WE inputs are both LOW. D ata on the four input pins (I/Oo through I/O3) is written into the memory location, specified on the address pins (Ac through Functional Description

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM 256 Kb (64 K × 4) Static RAM Features General Description • Fast access time: 15 ns The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64 K × 4 bits that supports an asynchronous memory interface. The device features an automatic

C1947

Abstract: C194 C1945 C1943 7C196 CY7C194 CY7C195 CY7C196 C1944 CY7C194-25PC
Contextual Info: CY7C194 7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and 7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns

Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs

C1945

Abstract: C1948 CY7C195 CY7C196 7C196 CY7C194 C1947
Contextual Info: 96 CY7C194 7C195 CY7C196 64K x 4 Static RAM Features able s (CE on the CY7C194 and 7C195, CE1, CE2 on the CY7C196) and three-state drivers. They have an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+