7C122 Search Results

VT7C122-35

Abstract: VT7C122-25
Contextual Info: V L SI Technology inc . _VT 7C122 256 x 4 STATIC RAM FEATURES DESCRIPTION • High-speed access and cycle times: 15 ns The 7C122 is a high-speed static RAM SRAM that is organized as 256 words by 4 bits. If offers very high performance and reliability, as

cy3341

Abstract: 64K X 4 CACHE SRAM CY7C190 pasic380 cy7c189 palce22v10 programming guide palce16v8 programming algorithm STATIC RAM 6264 vhdl code for 8-bit parity checker 64x18 synchronous sram
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 X4 SIO 7C147 2147 7C123 7C148 7C149 7C150 7C189 7C190 2148 2149 7C122 9122 93422 7C167A 7C168A 7C169A 7C170A 7C171A 7C172A 7C128A 7C187 7C164 7C166 7C161 7C162 7C185 6264 7C182 7C197 7C194

Triton P54C

Abstract: cy7c37128 62128 SRAM adapter 48-pin TSOP CY7C37192 CYM74P436 CY3501A CY7C37512 MIB 30 Product Selector Guide
Contextual Info: Product Selector Guide Fast Static RAMs Organization/Density Density X1 X4 X4 SIO X8 4K 7C147 2147 7C123 7C148 7C149 7C150 2148 2149 7C122 9122 93422 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195

93422PC

Abstract: ED91 93L422adc cy93l422
Contextual Info: CY93422A/93L422A CY93422/93L422 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM Features Functional Description • 256 x 4 static RAM for control stores in high-speed computers • Processed with high-speed CMOS for optimum speed/power • Separate inputs and outputs

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

CY93L422PC

Abstract: cy9122 cy93l422 cy7c122 sumitomo epoxy am-113 7C122 EME-6300H UL-94V0 CY93422 22 CDIP DIMENSIONS
Contextual Info: Qualification Report January 1992 QTP 90172 256 x 4 Static RAM MARKETING PART NBR DEVICE DESCRIPTION 7C122 SIO Version 1.1 PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

cy7c122

Abstract: CY7C122-35DMB cy7c122-25PC 7C122 CY7C122-25SC CY7C122-35 CY7C122-25DC CY7C122-25
Contextual Info: 7C122 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM Functional Description • 256 x 4 static RAM for control store in high-speed computers The 7C122 is a high-performance CMOS static R A M organized as 256words by 4 bits. Easy memory expansion is pro­

Contextual Info: 7C122 ~— SEMICONDUCTOR 256 x 4 Static R/W RAM Features Functional Description • 256 x 4 static RAM for control store in high-speed computers T h e C Y 7C 122 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d as 256 w ords by 4 bits. E a sy m e m o ry ex p a n sio n is p r o ­

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

CY7C122

Abstract: CY7C122-25PC CY7C122-15PC CY7C122-35 CY7C122-25SC CY7C122-25 CY7C122-35PC CY7C122-35DMB CY7C122-15 7C122
Contextual Info: W SEMICONDUCTOR 256 x 4 Static R/W RAM Features Functional Description • 256 x 4 static RAM for control store in high-speed computers • CMOS for optimum speed/power • H ighspeed — 15 ns commercial — 25 ns (military) • Low power — 330 mW (commercial)

94v-0 dynamic RAM

Abstract: M33005 CY93L422PC CY9122 7c122 cy7c122 CY93L422 m3300 EME-6300H UL-94V0
Contextual Info: Qualification Report December 1994 QTP 94261 Version 1.0 7C122 256 x 4 Static RAM - RAM2.1 PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

CY7C9101

Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Contextual Info: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the

t 122-25

Abstract: cy7c122a IR 224A
Contextual Info: _ 7C122 ^ sß SEMICONDUCTOR 256 x 4 Static R/W RAM F eatures F unctional D escription • 256 \ 4 sta tic RAM for con trol store in h igh -sp eed com p u ters • C M O S for op tim u m sp eed /p ow er • H igh speed T h e C Y 7 C 1 2 2 is a h ig h -p e rfo rm a n c e