CY6116 Search Results

ATT7C116J

Abstract: ATT7C116
Contextual Info: i =ATS.T ’^ ^ » M ic r o e le c tr o n ic s Data Sheet March 1992 ATT7C116 High-Speed CMOS SRAM 16 Kbit 2K x 8 , Common I/O Features • High speed — 10 ns maximum access time ■ Plug-compatible with IDT6116 and CY7C128/CY6116 ■ Automatic powerdown during long cycles

22V10-Macrocell

Abstract: 99522 PLD20RA10 22V10D 5962-89598 cy7c291 CY7C425 PALC22V10B CY6116A CY7C128A
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number 16K 2K x 8—CS Power-Down 24S CY7C128A 16K 2K x 8—CS Power-Down 24 CY6116A 64K 8K x 8—CS Power-Down 28S CY7C185A 256K 32K x 8—CS Power-Down 28 CY7C198 256K

CY6116-35

Abstract: CY6116-55
Contextual Info: CY6116 CYPRESS SEMICONDUCTOR Features A utom atic pow er-dow n w hen d eselected C M O S for op tim u m sp eed /p ow er H igh speed — 35 ns Low active power — 660 mW Low stan d b y power — 110 mW T T L -com p atib le in p u ts and ou tp u ts C ap ab le o f w ith sta n d in g g rea ter

ES 61162

Abstract: CY6117 sp 735L
Contextual Info: CY6116 _ CY6117 SEMICONDUCTOR 2048 x 8 Static R/W RAM Features Functional Description • A u to m atic pow er-dow n w hen deselected T h e C Y 6116 an d C Y 6117 are high-perform ance C M O S Static R A M s organized as 2048 w ords by 8 bits. Easy m em ory expan­

Contextual Info: ^ ä CY6116A CY6117A 5 s : f'Y PPF’RÇ 'W - SEMICONDUCTOR 2048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected T h e C Y b t 16A andC Y 6117A arehigh-perform anceC M O S static R A M sorganizedas 2048 w ords by 8 bits. Easy m em ory expan­

17A45

Abstract: 6117a
Contextual Info: = ~ _ CY6116A CY6117A m s W0 SEMICONDUCTOR 2048 x 8 Static R/W RAM Features F unctional D escription • A utom atic pow er-dow n w hen d eselected The1C Y 6 1 l6 A a n d C Y 6 1 l7 A a re h ig h -p e rfo rm a n c c C M O S s ta tic R A M s o rg a n iz e d as

MA 6116A

Abstract: 8116A
Contextual Info: CY6116A CYPRESS SEMICONDUCTOR 2048 x 8 Static R/W RAM Features Functional Description • Autom atic power-down when deselected T h e C Y 6116A is a high-perform ance C M O S static R A M organized as 2048 w ords by 8 bits. E asy m em ory expansion is provided by an active L O W chip e nable

CY6116-55PC

Abstract: CY6116 CY6116-35
Contextual Info: CY6116 —1 2,048 x 8 Static R/W RAM ss £>' mm CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — 35 ns • Low active power — 660 mW • Low standby power — 110 mW

6117a

Abstract: MA 6116A dc 6117a CY6116A-55DMB
Contextual Info: CY6116A CY6117A CYPRESS SEMICONDUCTOR Functional Description Features Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 20 ns Low active power — 550 mW 1 Low standby power — 110 mW TTL-compatible inputs and outputs Capable of withstanding greater

CY6116-55

Abstract: CY6116 CY6116-55DMB CY6116-55PC ram 16x8 CY6116-35LMB CY6116-55DC CY6116-35 STATIC RAM 16x8
Contextual Info: ss s,' -¡¡m qypRESS ~ SEMICONDUCTOR CY6116 • • 2,048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Highspeed — 35 us • Low active power — 660 mW • Low standby power

CY6116-35

Abstract: 6116 RAM expansion circuit
Contextual Info: CY6116 CYPRESS SEMICONDUCTOR " 2,048 x 8 Static RAV RAM Features Functional Description • Automatic power-down when deselected The C Y 6116 is a high-perform ance CM O S Static RAM organized as 2048 w ords by 8 bits. Easy m em ory expansion is provided by

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

22V10-Macrocell

Abstract: Product Selector Guide PLD20RA10 5962-93112 28s40 CY7C408
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP Part Number SMD Number 16K 2K x 8—CS Power-Down 24S CY7C128A 16K 2K x 8—CS Power-Down 24 CY6116A 64K 8K x 8—CS Power-Down 28S CY7C185A 5962-38294 64K 8K x 8—CS Power-Down 28S

6116A

Abstract: CY6116A-55DMB 6117a MA 6116A CY6116A CY6117A 6116A-55
Contextual Info: 6116A: 11/8/89 Revision: Monday, November 8, 1993 CY6116A CY6117A Features Pin Configurations DIP/SOJ Top View A6 2 23 A8 A5 3 22 A9 A4 4 21 WE A3 5 25 WE OE A2 6 24 OE 19 A10 NC 7 23 A10 18 CE NC 8 22 NC 21 NC 8 17 I/O7 9 16 I/O6 10 I/O2 11 14 I/O4 GND 12

6116 ram

Abstract: 6116 ram 2k memory 6116 6116 static RAM chip L6116M chip diagram of ram chip 6116
Contextual Info: L6116 L6116 DEVICES INCORPORATED 2K x 8 Static RAM Low Power 2K x 8 Static RAM (Low Power) DEVICES INCORPORATED DESCRIPTION ROW SELECT 7 O ROW ADDRESS Two standby modes are available. Proprietary Auto-Powerdown circuitry reduces power consumption automatically during read or write

CY6116

Abstract: HM6116 MK48Z02 DS1220Y-200 DALLAS 24PIN CY7C128-45 CY7C128-55 CY7C128A-15 CY7C128A-20 CY7C128A-25
Contextual Info: - 16 K 'f X m % it £t ¿&&ÍEH OC TAAC aax ns) TCAC (us) nMOS S t a t i c RAM (2 0 4 8 x 8 ) f iî TOE max (ns) TOH min (ns) TOD max (ns) TWP «in (ns) TDS •in (ns) M « TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 24PIN IDD aax (ibA) A I DD STANDBY

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

smd transistor w16

Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have an X in the PPL (Preferred

TZ1114

Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
Contextual Info: LOGIC DEVICES INC 2bE D • SSbSTOS OOOlOOfl 5 M _ _ _ _ _ _ 2K X 8 Static RAM T ~ 9 è ~2 3 - /2 L6116/L6116L Low Power DESCRIPTION FEATURES Q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

Contextual Info: L6 1 1 6 2K x 8 Static RAM Features Description_ □ 2K by 8 Static RAM with chip select powerdown, output enable The L6116 is a high-performance, lowpower CMOS static RAM. The storage circuitry is organized as 2048 words by 8 bits per word. The 8 Data

Contextual Info: L 6 1 1 6 2K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

Contextual Info: 2K X 8 Static RAM Low Power L 6 1 1 6 /L 6 1 1 6 L DESCRIPTION □ 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 10 ns maximum □ Low Power Operation Active: 250 mW (L6116) typical at 35 ns