CY7C286 Search Results

Contextual Info: CYPRESS b5E D SEMI CONDUCTOR • 25flRbb2 G Q l O S R b T13 ■ CYP CY7C286 CY7C287 S ;4 ^ s > c = f CYPRESS SEMICONDUCTOR 64K x 8 Reprogrammable Asynchronous/Registered PROMs • C ap ab le o f w ith stan d in g >2001V static d isch arg e • CMOS for optimum speed/power

C286

Abstract: CY7C287 CY7C286-70WC C2867 C2863 C2868
Contextual Info: CY7C286 64K x 8 Reprogrammable PROM Features in the active mode and 40 mA in the standby mode. Access time is 45 ns. • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — tAA = 45 ns • Low power — 120 mA active The CY7C286 is available in a cerDIP package equipped with

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 8 Reprogrammable Registered PROM Features Functional Description • CMOS for optimum speed/power T h e CY7C286 and the CY7C287 are highperform ance 65,536 by 8-bit CM O S PR O M s. T h e CY7C286 is configured in

Contextual Info: CY7C286 CY7C287 CYPRESS 65,536 x 8 Reprogrammable SEMICONDUCTOR Asynchronous/Registered PROMs Features Functional Description The CY7C286 and the CY7C287 are high-perfbrmance 65,536 by 8-bit CMOS PROMs. The CY7C286 is configured in the JEDEC-standard S12K EPROM pin­

Contextual Info: CY7C286 CY7C287 PR E LIM IN A R Y r^ Y p p u c c 65,536 x 8 PROM Reprogrammable Registered SEMICONDUCTOR Features Product Characteristics • CMOS for optimum speed/ power T h e C Y 7 C 2 8 6 a n d th e C Y 7 C 2 8 7 a re h ig h p e rfo rm a n c e 6 5 ,5 3 6 by 8 b it

A15C

Abstract: CY7C287 CY7C287-55PC LCOS uv
Contextual Info: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)

I3330

Contextual Info: CY7C286 CY7C287 CYPRESS SEMICONDUCTOR 65,536 x 8 Reprogrammable Asynchronous/Registered PROMs & Features Functional Description • CMOS for optimum speed/power The CY7C286 and the CY7C287 are high-perfonnance 65,536 by 8 -bit CMOS PROMs. The CY7C286 is configured in

Contextual Info: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)

EPM5128LC

Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C

Contextual Info: _ CY7C286 64K x 8 Reprogrammable PROM Functional Description Features • CMOS for optimum speed/power T he CY7C286 is a high-performance 64K x 8 CMOS PRO M . T he CY7C286 is con­ figured in the JE D E C -standard 512K E PR O M pinout and is available in a

CY7C287

Abstract: CY7C28x CY7C277
Contextual Info: Qualification Report December, 1993, QTP 92441 Version 1.1 CY7C27x/CY7C28x FAB2 QUAL MARKETING PART NUMBER DEVICE DESCRIPTION CY7C271/274 32K x 8 PROM Power Switch and Reprogrammable CY7C277/279 Reprogrammable 32K x 8 Registered PROM CY7C285 CY7C286/287 64K x 8 Reprogrammable Fast Column Access PROM

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

cy7c9101

Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
Contextual Info: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M

Contextual Info: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA Update drawing to reflect current requirements - glg. 13-02-07 APPROVED Charles Saffle REV SHEET REV SHEET REV STATUS REV A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A STANDARD

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

CY7C9101

Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Contextual Info: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the

Gunn Diode symbol

Abstract: cy202 CY7C190 WSP-109BMP3 pal22V10D cy7b166 cy7c291 CY7C371 EV film cap calculation gunn diode datasheet
Contextual Info: CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY APPENDIX A: FAILURE RATE CALCULATION Thermal Acceleration Factors Acceleration factors AF for thermal stresses (High Temperature Operating Life, Data Retention and High Temperature Steady State Life) are calculated from the Arrhenius equation.

multi 9 ihp 2c

Abstract: 300-mil
Contextual Info: • Capable o f w ithstanding >2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — tSA = 45 ns 7C287 — t c o = IS ns (7C287) — tAcc = 50 ns (7C286) • Low power — 120 mA active — 40 mA standby (7C286)