A15C Search Results

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Pin & Socket C onnectors > Product Feature Selector > Product Details M83513/03-A15C Product Details

D735

Abstract: D735C USD735C USD740C USD745C
Contextual Info: 16 Amp S c h o tt k y Rect ¡fiers US D735C US D7 A15C - c Dim. Inches Minimum —B A B C D E F G H J K L M N P R M illim eter Maximum Minimum .390 .045 .180 .245 .550 .139 .100 - .500 .190 .014 .080 .015 .045 .090 .415 .055 .190 .260 .650 .161 .135 .250

S1M a4

Contextual Info: a W M S1M 1-XD EX I/I/HITE M I C R O E L E C T R O N I C S IM x l SRAM MONOLITHIC ADVANCED* FEATURES • PIN CONFIGURATION TOP VIEW 32 3 VCC A11 C 2 31 D N C A I2 C 3 NCC 4 29 H as 28 D A7 A15C 7 26 D A 5 27 H A6 NCC 8 25 □ A4 A16C 9 A 1 7 C 10 24 H A 3

DIC14

Contextual Info: CMOS 8M 1M x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 1,048,576 x 8 bit organization TO P VIEW 32-PIN DIR • Access time: 150 ns (MAX.) / > 32 □ Vcc A tg C 1• A i 6C 2 31 □ a 18 A15C 3 30 D a î7 A12C 4 29 □ a 14 • Fully-static operation

Contextual Info: WSF256K8-XCX M/HITE /M IC RO ELEC TR O N IC S 256Kx8 SRAM/ FLASH MODULE * ADVANCED FEATURES FIG. 1 • A18H 1 ^ ■ 32 3 Vcc A16C 2 31 H W E A15C 3 30 3 A17 A12H 4 29 H A 1 4 A7C 5 28 H A13 A6C 6 A5C 7 27 H A 8 A4C 8 25 H A11 J E D E C S ta n d a rd , H e rm e tic C e ra m ic P a c k a g e , 3 2 pin D IP

I27512

Abstract: LH57512-15 LH57512J-12 LH57512J-15 zt77
Contextual Info: LH57512/J FEATURES PIN CONNECTIONS • 65,536 • Access times: LH57512J: 120/150 ns LH57512: 150 ns • • • • x CMOS 512K 64K x 8 OTPROM/EPROM 8 bit organization A15C Single +5 V power supply High speed programming: SHARP original programming algorithm

Contextual Info: LH53517 FEATURES CMOS 512K 64K x 8 MROM PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) TOP VIEW 28-PIN DIP 28-PIN SOP S • Low-power consumption: Operating: 165 mW (MAX.) A15C 1• N 28 □ V qc A12IZ 2 27 Zl a 14 a 7C

PH320240T-015-I02Q

Contextual Info: OKAYA Electric America, Inc. SPECIFICATIONS DRAWING CODE RH320240T-3x5WN-A15 RH320240T-3x5WP-A15C RH128128T-1X5WN-B RV320240T-5x7WN-B3 RV640480T-5X7WN-A3 S LMD-PH320240T-015-I02Q Ver.002 LMD-PH320240T-015-I-Q (Ver.001) ) MASS PRODUCTION CODE Customer Approved

Contextual Info: WHITE M I C R O E L E C T R O N I C S WE512K8, WE256K8, WE128K8-XCX 512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091 512Kx8 BIT CM OS EEPROM MODULE FEATURES FIG. 1 PIN C O N F IG U R A T IO N T O P V IE W 32 □ V . 31 □ WE 30 □ A17 A18C 1 A16C 2 A15C 3

Contextual Info: C orporate Hom e | Electronic Components | Se gm e nts | W ho W e Are My Account Searc h Products Documentation Resources My Account Customer Support Home > Products > By Type > Pin & Socket C onnectors > Product Feature Selector > Product Details M83513/04-A15C Product Details

Contextual Info: WHITE /MICROELECTRONICS 256Kx4 SRAM WPS256K4V-XRJX ad va n ce d * PLASTIC PLUS FEATURES • Access Times 15,17, 20ns PIN CONFIGURATION TO P VIEW NCC A3Ü A2C A1C AOC e sc 1/01 c vccC vss □ I/ 0 2 C WËE A17C A16C A15C A14C NCC 1 2 3 4 5 6 7 8 g 10 11

Contextual Info: 1/1/HITE /MICROELECTRONICS 1Mx1 SRAM MONOLITHIC WMS1M1-XDEX ADVANCED* FEATURES PIN CONFIGURATION TO P VIEW NCC 4 A13C 5 A14C 6 A15C 7 NCC 8 A16C 9 A 1 7 C 10 A 1 8 C 11 A 1 9 C 12 N C C 13 Q C 14 W E C 15 G N D C 16 A cce ss Times 20, 25, 35ns • M IL-STD -883 Compliant Devices Available

Contextual Info: CMOS 512K 64K x 8 Mask-Programmable ROM FEATURES PIN CONNECTIONS • 65,536 words x 8 bit organization • Access time: 150 ns (MAX.) 2 8 -P IN D IP 2 8 -P IN SO P T O P V IE W / - A15C • Low-power consumption: Operating: 165 mW (MAX.) 28 ^ v cc

Contextual Info: PRELIMINARY LH530800A-Y FEATURES • • C M O S 1M 128K x 8 M ask-Program m able ROM PIN CONNECTIONS 131,072 x 8 bit organization 32-PIN DIP 32-PIN SOP Access time: TOP VIEW / 1• S 32 □ Vcc 16C 2 31 □ NC A15C 3 30 □ NC 4 29 □ At A7r 5 28 □ A 13

LH53V4C00ET

Abstract: sharp mask rom 48-pin
Contextual Info: CMOS 4M 512K x 8/256K x 16 MROM FEATURES • 524,288 x 8 bit organization (Byte mode: BYTE = V,L) 262,144 x 16 bit organization (Word mode: BYTE = V,H) PIN CONNECTIONS 48-PIN TSOP (Type I) r TOP VIEW A15C 1 • A14IZ 2 A13C 3 • Access time: 150 ns (MAX.)

SRM20100LRM70

Contextual Info: SRM20100l_7o/85/io CMOS 1M-BIT STATIC RAM • Low Supply Current • Access Time 70ns/85ns/100ns • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM201 OOI_7o/85/ic is a 131,072 words x 8-bit asynchronous, static, random access memory on a monolithic

TSOP 173 g

Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
Contextual Info: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8

sf 127d

Abstract: 127D IC51-1324-828 SN74ABT3611 D103E
Contextual Info: SN74ABT3611 64 x 36 CLOCKED FIRST-IN, FIRST-OUT MEMORY SCBS127D - JULY 1992 - REVISED SEPTEMBER 1995 Free-Running CLKA and CLKB Can Be Asynchronous or Coincident 64 x 36 Clocked FIFO Buffering Data From Port A to Port B Mailbox-Bypass Register In Each Direction

8512A

Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges

Contextual Info: CMOS SyncFIFO IDT723611 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity • Synchronous data buffering from Port A to Port B

Contextual Info: 3.3 VOLT CMOS CLOCKED FIFO WITH BUS-MATCHING AND BYTE SWAPPING 64 x 36 • Passive parity checking on each Port • Parity Generation can be selected for each Port • Available in 132-pin plastic quad flat package PQF , or space saving 120-pin thin quad flat package (TQFP)

intel e28f

Abstract: 28f400 BYTE PROGRAM
Contextual Info: [p[M3 [G>U T [P^lWOIl in te l 4-MBIT 256K x 16, 512K x 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F400BV-T/B, 28F004BV-T/B, 28F400CV-T/B Intel Sm artVoltage Technology — 5V or 12V Pro g ram /E rase — 3.3V or 5V Read O peration — 60% Faster Typical Program m ing at

7C192-12

Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
Contextual Info: CY7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C191 and CY7C192 are high­ perform ance CM OS static RAM s orga­ nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac­

A18E

Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
Contextual Info: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide