CY7C199 Search Results

Contextual Info: CY7C199CN 256-Kbit 32 K x 8 Static RAM 256-Kbit (32 K × 8) Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ complementary metal oxide semiconductor (CMOS) for optimum speed and power

Contextual Info: fax id: 1030 CY7C199 32K x 8 Static RAM Features provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consum p­ tion by 81% when deselected. The C Y7C 199 is in the standard

Contextual Info: CY7C199-45PC 1/2 IL00D C-MOS 256 K (32,768 x 8)-BIT SRAM —TOP VIEW— 21 A5 1 VDD 28 A6 2 27 A7 3 26 A4 A8 4 25 A3 A9 5 24 A2 23 24 WE 25 26 1 2 3 4 5 6 A10 6 23 A1 7 8 A11 7 22 OE 9 10 A12 8 21 A0 A13 9 20 CE A0 D0 A1 D1 A2 D2 A3 D3 A4 D4 A5 D5 A6 D6 A7

CY7C199-20DC

Contextual Info: CYPRESS 4bE SEMICONDUCTOR asa%t>a » aoobba? 3 i CYP CY7C198 CY7C199 CYPRESS SEMICONDUCTOR 32,768 x 8 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Hlgb speed — 25 ns » Low active power

51-85071-F

Abstract: C199 CY7C199B CY7C199B-35VC
Contextual Info: CY7C199B PRELIMINARY 32K x 8 Static RAM Features is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The CY7C199B is in

San Ace 80

Abstract: CY7C199-25SC 7C199-10 7C199-15 7C199-20 7C199-25 7C199-35 7C199-45 7C199-8 C199
Contextual Info: fax id: 1030 1CY 7C19 9 CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

85031

Abstract: CY7C199CN cy7c199cn-15pxc
Contextual Info: CY7C199CN 256K 32K x 8 Static RAM General Description [1] Features • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs

7C199-15

Abstract: 7C199-20 7C199-25 7C199-35 CY7C199N CY7C199N-12ZXC 7C199-12
Contextual Info: CY7C199N 32K x 8 Static RAM Features Functional Description • High speed The CY7C199N is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and three-state drivers. This device

CY7C199CN

Abstract: TSOP 173 g
Contextual Info: CY7C199CN 256K 32K x 8 Static RAM General Description [1] Features • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs

CY7C199

Abstract: CY7C199-12ZXC CY7C199-15ZXC cy7c199-20pxc
Contextual Info: CY7C199 32K x 8 Static RAM Features Functional Description • High speed The CY7C199 is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and tri-state drivers. This device has

Contextual Info: CY7C1392BV18 CY7C1992BV18 CY7C1393BV18 CY7C1394BV18 18-Mbit DDR-II SIO SRAM 2-Word Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 • 300-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency

Contextual Info: CY7C199CN 256K 32K x 8 Static RAM General Description [1] Features • • • • • • • • Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) CMOS for optimum speed and power TTL-compatible inputs and outputs

CY7C199-35DMB

Abstract: cy7c199 7C198-55 CY7C198-35PC CY7C199-45PC
Contextual Info: CY7C198 _ CY7C199 SEMICONDUCTOR 32,768 x 8 Static R /W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed - 25 ns The CY7C198 and CY7C199 are high-per­ formance CMOS static RAMs organized as

ALPHA SOLDER datasheet

Abstract: ALPHA SOLDER CY7C194 CY7C195 CY7C199 JESD22
Contextual Info: Qualification Report December 1996, QTP# 96144, Version 1.1 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM CY7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

CY7C199-35VI

Abstract: CY7C199 CY7C199-15ZC 7C199-10 7C199-12 7C199-15 7C199-20 7C199-25 7C199-35 7C199-8
Contextual Info: CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

Contextual Info: CY7C199D Automotive 256 K 32 K x 8 Static RAM 256 K (32 K × 8) Static RAM Features Functional Description • Temperature ranges ❐ Automotive-E: –40 °C to 125 °C ■ Operating voltage VCC = 5 V ■ Pin and function compatible with CY7C199C ■ High speed

Contextual Info: CY7C199N 32 K x 8 Static RAM 32 K × 8 Static RAM Features Functional Description • High speed ❐ 15 ns ■ Fast tDOE ■ CMOS for optimum speed/power ■ Low active power ❐ 550 mW max, 15 ns “L” version ■ Low standby power ❐ 0.275 mW (max, “L” version)

CY7C199-15VC

Abstract: CY7C199-20vi CY7C199-25DMB
Contextual Info: 99 CY7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

QMI2419MA

Abstract: MIL-STD-883 Method 3015.7 7c198 cdip28pin alpha particle QMI2419
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99353 VERSION 1.0 January, 2000 CY7C199 Military Qualification R28 Technology, in Fab 2 CY7C199 32K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director 408 432-7069

Contextual Info: CY7C199 CYPRESS SEMICONDUCTOR 32Kx 8 Static RAM Features Functional Description • High speed T h e CY7C199 is a high-perform ance C M O S static R A M organized as 32,768 w ords by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable

Contextual Info: Ei SST CY7C199 W f CYPRESS 32K x 8 Static RAM Features Functional Description • High speed — 12 ns • Fast tuoE • CMOS for optimum speed/power • Low active power — 880 mW • Low standby power — 165 mW • Easy memory expansion with CE and OE features

Contextual Info: CY7C199N 32 K x 8 Static RAM Features • Functional Description High speed The CY7C199N is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and three-state drivers. This device

CY7C199D-10VXI

Abstract: 1709 013 CY7C199C CY7C199D CY7C199D-10ZXI 7C199D-10 18THD
Contextual Info: CY7C199D 256K 32K x 8 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C199C The CY7C199D is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active

Contextual Info: CY7C1392CV18, CY7C1992CV18 CY7C1393CV18, CY7C1394CV18 18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features Functional Description • 18-Mbit density 2M x 8, 2M x 9, 1M x 18, 512K x 36 ■ 300 MHz clock for high bandwidth ■ 2-word burst for reducing address bus frequency