7C199 Search Results

verilog for SRAM 512k word 16bit

Abstract: CY62512V CYM74P436 192-Macrocell 62128 sram 7C1350 Triton P54C palce16v8 programming guide 7C168A intel 16k 8bit RAM chip
Contextual Info: Product Selector Guide Static RAMs Organization/Density Density X1 X4 4K X8 X9 X16 X18 X32 X36 7C148 7C149 7C150 16K 7C167A 7C168A 7C128A 6116 64K to 72K 7C187 7C164 7C166 7C185 6264 7C182 256K to 288K 7C197 7C194 7C195 7C199 7C1399/V 62256/V 62256V25 62256V18

Contextual Info: 7C199 CYPRESS SEMICONDUCTOR 32Kx 8 Static RAM Features Functional Description • High speed — 12 ns T h e CY 7C199 is a high-perform ance C M O S static R A M organized as 32,768 w ords by 8 bits. Easy m em ory expansion is provided by an active L O W chip enable

Contextual Info: fax id: 1030 7C199 32K x 8 Static RAM Features provided by an active LOW chip enable CE and active LOW output enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consum p­ tion by 81% when deselected. The C Y7C 199 is in the standard

CY7C199-20DC

Contextual Info: CYPRESS 4bE SEMICONDUCTOR asa%t>a » aoobba? 3 i CYP CY7C198 7C199 CYPRESS SEMICONDUCTOR 32,768 x 8 Static R/W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • Hlgb speed — 25 ns » Low active power

51-85071-F

Abstract: C199 CY7C199B CY7C199B-35VC
Contextual Info: 7C199B PRELIMINARY 32K x 8 Static RAM Features is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 81% when deselected. The 7C199B is in

San Ace 80

Abstract: CY7C199-25SC 7C199-10 7C199-15 7C199-20 7C199-25 7C199-35 7C199-45 7C199-8 C199
Contextual Info: fax id: 1030 1CY 7C19 9 7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

ATPA

Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C

7C199-15

Abstract: 7C199-20 7C199-25 7C199-35 CY7C199N CY7C199N-12ZXC 7C199-12
Contextual Info: 7C199N 32K x 8 Static RAM Features Functional Description • High speed The 7C199N is a high-performance CMOS static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and three-state drivers. This device

81c78

Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Contextual Info: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M

Contextual Info: 32K X 8 Static RAM FEATURES □ 32K x 8 Static RAM w ith Chip Select Pow erd ow n, O utpu t Enable □ A uto-Pow erdow n D esign □ A dvanced C M O S Technology □ H igh Speed — to 15 ns m axim um □ Low Pow er O peration A ctive: 380 m W typical at 45 ns

Contextual Info: CYM1400 ' — 32K x 8 SRAM Module PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • Very high speed 256K SRAM module T he C Y M 1400 is an extremely high performance 256-kilobit static RAM module organized as 32,768 words by 8 bits. This module is constructed using

CY7C199-35DMB

Abstract: cy7c199 7C198-55 CY7C198-35PC CY7C199-45PC
Contextual Info: CY7C198 _ 7C199 SEMICONDUCTOR 32,768 x 8 Static R /W RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed - 25 ns The CY7C198 and 7C199 are high-per­ formance CMOS static RAMs organized as

ALPHA SOLDER datasheet

Abstract: ALPHA SOLDER CY7C194 CY7C195 CY7C199 JESD22
Contextual Info: Qualification Report December 1996, QTP# 96144, Version 1.1 256K SRAM - RAM28 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C194 64K x 4 Static RAM CY7C195 64K x 4 Static RAM 7C199 32K x 8 Static RAM PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

140C

Abstract: CY7C199
Contextual Info: Qualification Report December 1996, QTP# 95471, Version 1.1 RAM28 TECHNOLOGY - TUNGSTEN SILICIDE PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part

EME-6300H

Abstract: 6300H mos die CY7C1399 CY7C197 CY7C199
Contextual Info: Qualification Report June, 1995 - QTP# 94465 Version 1.0 RAM2.8 TRANSISTOR FOR RAM2.5 PROCESS PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

Contextual Info: 7C199 DEVICES INCORPORATED FEATURES DESCRIPTION □ 32K x 8 Static R A M w ith Chip Select P ow erdow n, O utput Enable □ A uto-Pow erdow n D esign □ A dvanced C M O S T echnology □ H igh Speed — to 15 ns m axim um □ Low Pow er O peration Active:

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

ATT7C199P-15

Contextual Info: Hw 25 mz Datasheet February 1992 7C199 = ^A T & T Microelectronics High-Speed CMOS SRAM, 256 Kbit 32K x 8 , Common I/O, Output Enable Features High speed — 12 ns maximum access times Plug-compatible with IDT71256 and CY7C198/199 Automatic powerdown during long cycles

CY7C199-35VI

Abstract: CY7C199 CY7C199-15ZC 7C199-10 7C199-12 7C199-15 7C199-20 7C199-25 7C199-35 7C199-8
Contextual Info: 7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

Contextual Info: 7C199N 32 K x 8 Static RAM 32 K × 8 Static RAM Features Functional Description • High speed ❐ 15 ns ■ Fast tDOE ■ CMOS for optimum speed/power ■ Low active power ❐ 550 mW max, 15 ns “L” version ■ Low standby power ❐ 0.275 mW (max, “L” version)

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

CY7C199-15VC

Abstract: CY7C199-20vi CY7C199-25DMB
Contextual Info: 99 7C199 32K x 8 Static RAM Features • High speed — 10 ns • Fast tDOE • CMOS for optimum speed/power • Low active power — 467 mW max, 12 ns “L” version • Low standby power — 0.275 mW (max, “L” version) • 2V data retention (“L” version only)

QMI2419MA

Abstract: MIL-STD-883 Method 3015.7 7c198 cdip28pin alpha particle QMI2419
Contextual Info: Cypress Semiconductor Qualification Report QTP# 99353 VERSION 1.0 January, 2000 7C199 Military Qualification R28 Technology, in Fab 2 7C199 32K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director 408 432-7069

Contextual Info: 7C199 CYPRESS SEMICONDUCTOR 32Kx 8 Static RAM Features Functional Description • High speed T h e 7C199 is a high-perform ance C M O S static R A M organized as 32,768 w ords by 8 bits. Easy m em ory expansion is provided by an active LO W chip enable