CY7C1399 Search Results

1709 013

Abstract: CY7C1399BN CY7C1399BN-12VC CY7C1399BN-12VXC CY7C1399BN-12VXI CY7C1399BN-12ZC CY7C1399BN-12ZXC CY7C1399BNL-12ZC CY7C1399BNL-12ZXC
Contextual Info: CY7C1399BN 256K 32K x 8 Static RAM Features expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and tri-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected.

Contextual Info: 399 CY7C1399 32K x 8 3.3V Static RAM Features • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 255 mW max. • Low CMOS standby power (L) — 180 µW (max.), f=fMAX • 2.0V data retention (L)

Contextual Info: 399B CY7C1399B 32K x 8 3.3V Static RAM Features pansion is provided by an active LOW Chip Enable CE and active LOW Output Enable (OE) and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected.

Contextual Info: CY7C1399BN 256 K 32 K x 8 Static RAM Functional Description Features The CY7C1399BN is a high-performance 3.3 V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and tristate drivers. The

CY7C1399B

Abstract: CY7C1399B-12VC CY7C1399B-15VXC
Contextual Info: CY7C1399B 256K 32K x 8 Static RAM Features active LOW Output Enable (OE) and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected. • Single 3.3V power supply • Ideal for low-voltage cache memory applications

577w

Abstract: CY7C1399V A6213
Contextual Info: CY7C1399V 32K x 8 3.0V Static RAM Features D D Single 3.0V The CY7C1399V is a highĆperformance 3.0V CMOS static RAM organized as 32,768 words by 8 bits. Easy memory exĆ pansion is provided by an active LOW chip enable CE and active LOW output enĆ able (OE) and threeĆstate drivers. The deĆ

CY7C1399

Abstract: EME-6300H
Contextual Info: Qualification Report July 1996, QTP# 95417, Version 2.0 CY7C1399 32K x 8, 3.3V Static RAM PRODUCT DESCRIPTION (for qualification) Information provided in this document is intended for generic qualification and technically describes the Cypress part supplied:

Contextual Info: 7c1399: Monday, November 16,1992 Revision: Wednesday, January 6,1993 CY7C1399 ADVANCED INFORMATION CYPRESS t SEMICONDUCTOR = ' 3.3V 32Kx 8 Static RAM • Automatic power-down when deselected Features • Single 3 3 ± 0.3V power supply • H ighspeed — 15 ns

CY7C1399BN

Abstract: CY7C1399BN-12VC CY7C1399BN-12VXC CY7C1399BN-12VXI CY7C1399BN-12ZC CY7C1399BN-12ZXC CY7C1399BNL-12ZC CY7C1399BNL-12ZXC
Contextual Info: CY7C1399BN 256K 32K x 8 Static RAM Features expansion is provided by an active LOW Chip Enable (CE) and active LOW Output Enable (OE) and tri-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected.

Contextual Info: CY7C1399BN 256K 32K x 8 Static RAM Functional Description[1] Features • Single 3.3V power supply The CY7C1399BN is a high-performance 3.3V CMOS Static RAM organized as 32,768 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE) and

Contextual Info: W g * CYPRESS 32K x 8 3.3V Static RAM Features Functional Description • Single 3.3V power supply T he CY7C1399 is a high-perform ance 3.3V CM O S static R A M organized as 32,768 w ords by 8 bits. Easy m em ory ex­ pansion is provided by an active LO W chip

CY7C1399V

Contextual Info: CY7C1399V 32K x 8 3.0V Static RAM Features • Single 3.0V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 198 mW max. • Low CMOS standby power (L) — 165 µW (max.), f=fMAX • 2.0V data retention (L)

c1399

Abstract: C1399 transistor 7C13 CY7C1399 C13997
Contextual Info: 1CY 7C13 99 CY7C1399 32K x 8 3.3V Static RAM Features • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 255 mW max. • Low CMOS standby power (L) — 180 µW (max.), f=fMAX

CY7C1399BL-12ZXC

Abstract: CY7C1399B CY7C1399B-12VC CY7C1399B-15VXC
Contextual Info: CY7C1399B 256K 32K x 8 Static RAM Features active LOW Output Enable (OE) and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected. • Single 3.3V power supply • Ideal for low-voltage cache memory applications

CY7C1399BN

Abstract: CY7C1399BN-12VXC CY7C1399BN-12VXI CY7C1399BN-12ZXC CY7C1399BN-15VXA CY7C1399BN-15ZXI CY7C1399BNL-12ZXC CY7C1399BNL-15VXC CY7C1399BNL-15VXCT
Contextual Info: CY7C1399BN 256 K 32 K x 8 Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Commercial: 0 °C to 70 °C ❐ Automotive-A: –40 °C to 85 °C ■ Single 3.3 V power supply The CY7C1399BN is a high-performance 3.3 V CMOS Static

Contextual Info: CY7C1399 32K x 8 3.3V Static RAM Features • S ingle 3.3V p o w e r s u p p ly • Ideal fo r lo w -vo lta g e cache m e m o ry a p p lic a tio n s • H igh speed — 12/15 ns • Low a ctive pow e r — 255 m W m ax. • Low CMOS s ta n d b y p o w e r (L)

Contextual Info: CY7C1399 32Kx 8 3.3V Static RAM Features Functional Description • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 255 mW max. • Low CMOS standby power (L) — 180 [aW (max.), ì-ìm a x

C1399

Abstract: 7C13 CY7C1399V
Contextual Info: 1CY 7C13 99 V CY7C1399V 32K x 8 3.0V Static RAM Features • Single 3.0V power supply • Ideal for low-voltage cache memory applications • High speed — 12/15 ns • Low active power — 198 mW max. • Low CMOS standby power (L) — 165 mW (max.), f=fMAX

CY7C1399B

Abstract: CY7C1399B-10VC 399B
Contextual Info: 399B CY7C1399B 32K x 8 3.3V Static RAM Features active LOW Output Enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected. • Single 3.3V power supply • Ideal for low-voltage cache memory applications

Contextual Info: CY7C1399BN 256-Kbit 32 K x 8 Static RAM 256-Kbit (32 K × 8) Static RAM Features Functional Description • Temperature Ranges ❐ Industrial: –40 °C to 85 °C ❐ Commercial: 0 °C to 70 °C ❐ Automotive-A: –40 °C to 85 °C The CY7C1399BN is a high-performance 3.3 V CMOS Static

C1399

Abstract: CY7C1399
Contextual Info: CY7C1399 32K x 8 3.3V Static RAM Features D D Single 3.3V The CY7C1399 is a highĆperformance 3.3V CMOS static RAM organized as 32,768 words by 8 bits. Easy memory exĆ pansion is provided by an active LOW chip enable CE and active LOW output enĆ able (OE) and threeĆstate drivers. The deĆ

cy7c1399bl-15vc

Abstract: CY7C1399B-10ZC CY7C1399B CY7C1399B-10VC
Contextual Info: C1399B CY7C1399B 32K x 8 3.3V Static RAM Features active LOW Output Enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 95% when deselected. • Single 3.3V power supply • Ideal for low-voltage cache memory applications

CY7C1399B

Abstract: CY7C1399D
Contextual Info: CY7C1399D PRELIMINARY 256K 32K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1399B • Single 3.3V power supply • Ideal for low-voltage cache memory applications • High speed — tAA = 8 ns • Low active power

145AA

Abstract: FIT4 8361H CY7C1399 CY7C199 JESD22
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97202 VERSION 1.0 November, 1997 32K x 8 SRAM, R32 Technology, Fab 4 Qualification CY7C199 32K x 8 SRAM 5V Operation CY7C1399 32K x 8 SRAM (3.3V Operation) Cypress Semiconductor, Inc. 32K x 8 SRAM - R32D Technology