2555N Search Results

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

Samsung EOL

Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
Contextual Info: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM

Contextual Info: _ EDI88130CS m o \ Bedronic Detignt Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby

p 602

Abstract: WEDPS512K32-XBX bga thermal resistance
Contextual Info: White Electronic Designs WEDPS512K32-XBX 512Kx32 SRAM MULTI-CHIP PACKAGE FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 12, 15, 17, 20, ns Packaging TTL Compatible Inputs and Outputs • 16mm x 18mm, 143 PBGA 5V Power Supply

EDI88128CS45CB

Abstract: as128Kx8 663D
Contextual Info: EDI88128CS ^ E D l 12SKx8 Monolithic Sialic Ram ELECTRONIC. DESIGNS, INC. Features 72RfGtf Monotihic Hicfi Speed CMOS Static RAM 128Kx8 bit CMOS Static Random Access Memory • Fast Access Times: 12,15r 17,2Q 25,35r 45r & 55ns TTie EDI88128CS is a high speect high performance

Contextual Info: ^ E D EDI8C32128C I 128Kx32 Static Ram EL£CTRONC DESIGNS M C 128Kx32 Highspeed Static RAM Features 128Kx32 bit CMOS Static Random Access Memory • Fast Access Times: 17", 20,25,35,45, and 55ns • Individual Byte Selects x8, x16, x32 • Data Retention Function, EDI8C32128LP

EDI88130CS25CB

Contextual Info: m o i EDI88130CS ^ •c to n ie Designs Inc. • High Performance Megabit Monolithic SRAM 128Kx8 Monolithic CMOS Static RAM, High Speed Features The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits. An additional chip enable line provides system memory

ed188130

Abstract: ED188130LPS
Contextual Info: EDI88130CS ^ E D I, ÉLECTROMC DESIGNS NC. 128Kx8 Monolithic Static Ram Features 128Kx8 Monolithic CMOS Static RAM, Highspeed 128Kx8 bits Monolithic CMOS Static Random Access Memory The EDI88130CS is a high speed, high performance, monolithic Static RAM organized as 128Kx8 bits.

WEDPS512K32-XBX

Contextual Info: WEDPS512K32-XBX White Electronic Designs 512Kx32 SRAM MULTI-CHIP PACKAGE ADVANCED* FEATURES „ Commercial, Industrial and Military Temperature Ranges „ Access Times of 12, 15, 17, 20, ns „ TTL Compatible Inputs and Outputs „ Packaging „ 5 Volt Power Supply

Contextual Info: EDI88130CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns An additional chip enable line provides system memory security during power down in non-battery backed up systems and memory banking in high speed battery backed systems where large multiple

Contextual Info: ^EDI EDI8C32512CA m ELECTRONIC DESIGNS, INC 512Kx32 Static Ram 512Kx32 Highspeed Static RAM Features The EDI8C 32512C A, a high speed, high perform ance, 512Kx32 bit CMOS Static sixteen Random Access Memory m egabit density Static RAM organized as 512Kx32 bits, contains fou r 512Kx8 SRAM s mounted in

Contextual Info: EDI88128CS 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES  Access Times of 15*, 17, 20, 25, 35, 45, 55ns The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby

EDI88128CS45CB

Abstract: EDI88128LPS25NB
Contextual Info: ^EDI EDI88128CS B actronle Designs Inc. High Performance Megabit Monolithic SRAM 128Kx8 Monolithic High Speed CMOS Static RAM Features The EDI88128CS is a high speed, high performance, megabitdensity monolithic Static RAM organized as 128Kx8 bits. The device has eight bi-directional input-output lines to

DODI151

Abstract: EDI8M8512C EDI8M8512LP
Contextual Info: ^E D I EDI8 M8512 C Electronic Designs Inc. • High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­

IDT7M4077

Abstract: kw05 2814t
Contextual Info: PRELIMINARY IDT7M4077 256K x 32 BiCMOS/CMOS STATIC RAM MODULE Integrated D evice Technology» Inc. FEATURES: DESCRIPTION: • High density 8 megabit static RAM module The ID T7M 4077 is a 256K x 32 static RAM module con­ structed on a mu Itilay er ceramic substrate using eight 256Kx4

EDI88130CS20NB

Abstract: EDI88130CS EDI88130CS15CI EDI88130CS55LB EDI88130CS25CB EDI88130CS25N
Contextual Info: W5X EDI88130CS 128Kx8 M onolithic ELECTRONIC DESIGNS, INC Static Ram Features 128Kx8 Monolithic CMOS Static RAM, Highspeed 128Kx8 bits Monolithic CMOS Static Random Access Memory • The EDI88130CS is a high speed, high performance, Fast Access Times: monolithic Static RAM organized as 128Kx8 bits.

IC TB 1237 AN

Abstract: TB 1237 AN IDT7M4077
Contextual Info: PRELIMINARY IDT7M4077 256Kx 32 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh density 8 m eg ab it static R A M m odu le T h e ID T / M 4 0 7 7 is a 2 5 6 K x 3 2 static R A M m odu le con­ structed on a m ultilayer cera m ic substrate using eight 2 5 6 K x 4

EDI8C32128C45GM

Contextual Info: W D EDI8C32128C \ 128Kx32 Static Ram ELECTRONIC DESIGNS, INC. 128Kx32 Highspeed Static RAM Features The EDI8C32128C, a high speed, high performance, four 128Kx32 bit CMOS Static megabit density Static RAM organized as 128Kx32 bits, Random Access Memory •

Contextual Info: m o i _ EDI8M8257C Electronic Designs Inc. High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit

CS229

Abstract: EDI88130CS
Contextual Info: EDI88130CS HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ Battery Back-up Operation • 2V Data Retention EDI88130LPS The EDI88130CS is a high speed, high performance, 128Kx8 bits

EDI88128CS

Contextual Info: EDI88128CS HI-RELIABILITY PRODUCT 128Kx8 Monolithic SRAM, SMD 5962-89598 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns The EDI88128CS is a high speed, high performance, 128Kx8 megabit density Monolithic CMOS Static RAM. ■ CS and OE Functions for Bus Control

Contextual Info: _ EDI8C32128C ^EDI E l e c t r o n i c D e s ig n s I n c . High Performance Four Megabit SRAM Module 128Kx32 CMOS High Speed Static RAM Module Features The EDI8C32128C is a high speed, high performance, four megabit density Static RAM module organized as

EDI8M8512C

Abstract: EDI8M8512C25C6B EDI8M8512C30C6B EDI8M8512C35C6B EDI8M8512C45C6B EDI8M8512LP TTL 154
Contextual Info: ^EDI EDI8M8512C Electronic Designs Inc. , High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four mega­