A310 Search Results

HD-20

Contextual Info: o A 3d l 30 1 133HS 31V0S 6¿¿00 01 a310ldlS3U on ONiMvya 3000 33V0 LV 3NiMVdo d^noisno 1H0I3M OLOOt-tLL 3ZIS 331 IdOHS _LNIdd_L003 065' 02-aH 3_LI1AId~l1AIV ‘SISOd Via 9Z0' ‘113HS HVJJ3kM INOdj/M ‘ONViy ‘NSOd SZ '£ 3ZIS ‘ASSV IdOd3 s o n xu jo e g

Contextual Info: SIEMENS BUZ 310 SI PMOS Power Transistors N channel Enhancement mode I Type </> • • ^DS on Package 1> Ordering Code BUZ 310 1000 V 2.5 A 5.0 Q TO-218 AA C67078-A3101-A2 BUZ 311 1000 V 2.3 A 6.0 n TO-218 AA C67078-A3102-A2 Maxim um Ratings Parameter

Contextual Info: SIEMENS BUZ 307 BUZ 308 SIPMOS Power Transistors • • N channel Enhancement mode Type ^DS R dS on Package 1> O rdering Code BUZ 307 800 V 3.0 A 3.0 n TO-218 AA C67078-A3100-A2 BUZ 308 800 V 2.6 A 4.0 LI TO-218 AA C67078-A3109-A2 Maxim um Ratings Param eter

D-82178

Abstract: 41A06S 41A06 EPR411A064101 relay zettler Excel Cell Electronic zettler 800 medical EPR411A064 EPR211A064001 41A06S1
Contextual Info: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/7 A31060 3 EPR MOS RELAY 4PIN Low Cost Version 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)

Contextual Info: Passive Devices Fiber Optic Passive Devices SVA-A Series Wave Length λ = 1310 nm and 1550 nm SPECIFICATION Model/Item SVA-A30300 SVA-A30500 SVA-A31000 SVA-A31500 Attenuation 3 dB ± 1.0 dB 5 dB ± 1.0 dB 10 dB ± 1.5 dB 15 dB ± 1.5 dB Return loss 40dB or more

ISS 355

Abstract: BUZ355A
Contextual Info: SIEMENS SIPMOS Power Transistors • • BUZ 355 BUZ 356 N channel Enhancement mode Type VDS To ^DS on Package 1> B U Z 355 800 V 6.0 A 29 'C 1.5 Q TO-218 AA C67078-A3107-A2 B U Z 356 800 V 5.3 A 25 'C 2 .0 ÍÍ TO-218 AA C67078-A3108-A2 Ordering Code

41A06S

Abstract: 41A06 EPR411A064 41A40T EPR411A064000 EPR411A064100 41A20T 41A06T 41B40S smd 1C
Contextual Info: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/16 A31060 3 EPR MOS RELAY 4PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)

A3102

Abstract: HFA3102 Dual Long-Tailed Pair Transistor Array M14.15 Package
Contextual Info: HF A3102 Semiconductor A u g u s t 19 96 D a ta S h e e t Dual Long-Tailed Pair Transistor Array The A3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Harris bonded wafer UHF-1 SOI process, this array achieves

Contextual Info: SIEMENS BUZ 310 SIPMOS Power Transistor • N channel * Enhancement mode V3l05&#39;55 3 Pin 1 Pin 2 Pin 3 D G S Type Vds b ffDS on Package Ordering Code BUZ 310 1000 V 2.5 A 5 Í2 TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage

BUZ310

Abstract: C67078-A3101-A2
Contextual Info: BUZ 310 SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 310 1000 V 2.5 A 5Ω TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

transistor buz 311

Abstract: BUZ 311 C67078-A3102-A2
Contextual Info: BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 311 1000 V 2.5 A 5Ω TO-218 AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage

Contextual Info: SIEMENS BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode V'OS'bS i 2f Pin 2 P in i G Type BUZ 311 Vbs 1000 V b 2.5 A ^DS on 5Q Pin 3 D S Package Ordering Code TO-218AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage

transistor buz 311

Contextual Info: SIEMENS BUZ 311 SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 311 Vds 1000 V b 2.5 A ^DS on 5 ÌÌ Package Ordering Code TO-218AA C67078-A3102-A2 Maximum Ratings Parameter Symbol Drain source voltage Wds Drain-gate voltage '/DGR 1000

V1160

Abstract: buz310
Contextual Info: SIEMENS BUZ 310 SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 310 Vbs 1000 V b 2.5 A flbS on Package Ordering Code 5£2 TO-218 AA C67078-A3101-A2 Maximum Ratings Parameter Symbol Drain source voltage Vbs Drain-gate voltage 'l DGR

EPR82A40T

Abstract: EPR82A40s EPR82A06M EPR82A40m epr82a40 EPR81C40T EPR82B40M EPR82A06S EPR82A06T EPR82A
Contextual Info: NO. EXCEL CELL ELECTRONIC CO., LTD. Edition S P E C I FI C A T I O N 2 PAGE 1/20 A31061 3 EPR MOS RELAY 8PIN 1. FEATURES 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 No EMI/RFI Generation High reliability No moving parts Low drive power requirement (TTL/CMOS Compatible)

v301r

Abstract: s75 marking
Contextual Info: GO 34m m Single — Square Configuration Maida Style Number S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 S75 ZO V131R A310 ZO V141R A330 ZOV151RA36Q ZOV181RA39Û Z O V 21 1RA430 ZO V231R A460 ZO V251R A490 ZO V 27 1RA550

B25667-A3107-A175

Abstract: IN96
Contextual Info: PhaseCap B25667-A3107-A175 MKK400-I-5-01 4RB5 050-5 AA 40 Characteristics CN UN fN QN IN tan δ 0 1x 100 AC 400 50 5 1x 13 µF ±5 % V Hz kvar A Marking 60 Hz 6 kvar 16 A 0,2 W/kvar dielectric Maximum ratings The information in our data book / sheet describes the type of

Glenair 06324

Abstract: 06324 Glenair 407 as 048 Glenair arinc 600 620 mt 1389 FE USB CONNECTOR QQB575R QQB575R36T125 Glenair micro mt 1389 fe 240-033-2-25PSCDP 33E12
Contextual Info: EMI/EMP Filter Connectors High-Reliability Military Standard and Commercial Connectors for EMI Suppression United States  United Kingdom  Germany  France  Nordic  Italy 2nd Edition • September 2008  Spain  Japan 1000 Hour Grey TM The Advanced Formula

Relay schrack RU

Abstract: schrack ru 110 012 schrack rp 111 012 SCHRACK RP RELAY 24vdc 12FLA/60LRA Relay schrack RU 610 112 V23077 omr h 5vdc reed relay T73 24VDC 3V DC Motor RM3
Contextual Info: Catalog 1308242 Issued 3-03 PDF Rev 4-04 SELECTOR GUIDE Circuit Breakers P&B P&B P&B P&B P&B Series W57 W54 W58 W28 W51 Type Thermal Thermal Thermal Thermal Thermal Features Approximate Size and Weight (per pole) • Compact design • Quick connect terminals

ta31062n

Abstract: TA31063N ta31062 circuit diagram for 2.1 ch speaker TA31063
Contextual Info: SPEECH NETWORK ICs TENTATIVE DATA SPEECH NETW ORK FOR TELEPHONE FEATURES CTA 31062N , T A 31 063N > • Built-in speaker am plifier for on-hook dialing. • Built-in pow er circuit for dialer or reservation, enabling reduction of external parts. • Capable of coping with ceramic and dynam ic receivers.

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

T225-6

Abstract: marking code 581
Contextual Info: LOW PROFILE SERIES SPECIFICATIONS 550» 5 8 0 ,6 2 0 and 6 8 0 VAC Varistors Recognitions To Safety Agency Standards Maida Style Number R691 *ZOV551 RA255 R65* *ZOV551 RA510 R66*ZOV551RA540 S66* *ZOV551RA690 A X X X X B X X X X R69* •ZOV581RA265 R651 *ZOV581 RA530

v23301

Abstract: V23301-A3104-A24 V23301-B3104-F24 V23301-A BELL V23301-B3101-C220 V23301-A3106-X3 A3102 V23301-B3101-A220
Contextual Info: High-lntensity Bell GF1 for Outdoor Applications V23301 High-speed dc or ac operation 50/60 Hz or ringing current 25 Hz Mounting position as required, preferably in vertical position Approx. weight: 2 kg or 2,5 kg Bell sheet steel, bright-zinc coated, yellow passivation