3530114 Search Results

EDI8M16257C

Contextual Info: ELECTRONIC DESIGNS INC 30E D • 3530114 0 0 0 0 7 5 e} â ■ EDI8M16257C MDl Btctio rie Dtilgn» Inc. > High Speed Four Megabit SRAM Module 256Kx16 Static RAM High Speed CMOS, Moduie Di!F iiâT8©i M The EDI8M16257C is a 256Kx16 CMOS Static RAM Module consisting of four 4 128Kx8 CMOS Static

ET334

Abstract: IR 37 0023 D023 EDI8M32256C DQ28-DQ31 35R4
Contextual Info: ELECTRONIC DESIGNS INC 30E D • 3530114 W d J \ _ B * c fio n fc O titg n * I n c , • — ■— — —« — Q Q Q 0 7 Sb □ ■ EDI8M32256C . i •• 1 1 1 256KX32 Static RAM CMOS, High Speed Module ÂBVÂMCI IMFQBMÂTDON Features

Contextual Info: EL ECT RONIC DESIGNS INC ^EDI E la d r o n J c D s s l g n i In o . 30E D I 3530114 0000530 7 • EDI2090C-EDI2095C 1 High Performance Synchronous SRAM 128Kx9 Monolithic High Speed Synchronous Static RAM T .V 6 -Z 3 -W Features The E D I2 0 9 0 C is a high performancet 1 megabit

t1is

Contextual Info: ELECTRONIC DESIGNS INC ^ED I 3QE D Elaekontfi Dislgns Inc. » • 3530114 0000714 b ■ EDI8M8257C/LP/P High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C/LP/P is a 2048K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a

uua 170

Abstract: SRAM 64Kx16 t1is 32Kx16 150ns 327a3
Contextual Info: ELECTRONIC DESIGNS INC 3DE D m a • 3530114 GOGGbMS 7 ■ EDI8F1664C m c lr o o lo D*«lgn< In c.* Commercial Megabit SRAM Module 64Kx16 Static RAM CMOS, Module Features The EDI8F1664C is a high speed 64Kx16 CMOS 64Kx16 bit CMOS Static Static RAM Module consisting offour 4 32Kx8CMOS Random Access Memory Module

8M8128C

Abstract: EDI8M8128C100CB EDI8M8128C EDI8M8128C-120CC T-46-23-14
Contextual Info: ELECTRONIC DESIGNS INC ÛS D eJ 3530114 □□0Q0Û3 A | T -4 6 -2 3 -1 4 EDI 8M8128C 100/ 120/150 Module The fu tu re . . . today. PRELIMINARY 128Kx8 Static RAM CMOS, Module Features The EDI 8M8128C is a 1024K bit CMOS Static RAM based on four 32Kx8 Static RAMS in

a41sc

Abstract: EDI88130 ed188130 ED188130LP S6570 88128 88130C s7085
Contextual Info: ELEC TR O N IC M D D ES IG N S 3QE D • IN C 3530114 0000^03 Ö ■ EDI88128C/LP/P l tlèctionic D iitg n i Ine. Megabit Monolithic SRAM 128Kx8 Static RAM CM OS, Monolithic Features The EDI88128C/LP/P* isahigh performance, mega­ bit density monolithic Static R A M organized as 128K x 8

D010

Abstract: D016 D020 D023 EDI8F32256C
Contextual Info: E L E C TR ON IC D E S I GN S INC Electronic D *« lgn a Inc. S1E D • 3530114 0 0 0 H 3 2 151 *EL]> _ EDI8F32256C High Speed Eight Megabit SRAM Module 256Kx32 Static RAM CMOS, High Speed Module L O lliñ lf i Features X - V 6 - 2 J - / Y

Contextual Info: W D EDI5M32128C I ELECTRONIC DESIGNS IN C. High Performance Four Megabit EEPROM Module 128Kx32 CMOS ] l fl[ EEPROM Module Features The EDI5M32128C is a high speed, high perform­ ance, four megabit density EEPROM module organized as 128Kx32 bits. The module has four 128Kx8

Contextual Info: M D \ ELECTRONIC QE9GN& N C . EDI7P16xxxA TA/CF A Features General Description Type II, Type 111 and Compact Flash packaging ATA Flash PC Cards Densities from 2MB to 220MB EDI's ATA Flash Memory PC Card series offers a full • Compact Flash - 2MB to 24MB

Contextual Info: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash

Contextual Info: WDÌ EDI8F8259C ELECTRONIC DESIGNS INC. • High Speed Two Megabit SRAM Module Features 256Kx8 Static RAM CMOS, Module The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a mutti-layered epoxy laminate FR4 substrate.

a719

Abstract: EDI411024C 150ni 15trc 1MX1
Contextual Info: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power

J2-Q0

Abstract: ED184256CS j2q0 256KX4 55C10
Contextual Info: ^2EDI _ ELECTRONIC DESIGNS INC 30E D • -3230114 QOOObl? ñ ■ ElMtronlo D*i!gni Inc. • Kx4 Monolithic CMOS Static RAM Commercial and Military High Performance Megabit SRAM 256 Features The EDI84256CS/LPS/PS is a high speed, high performance, megabit density monolithic Static RAM

D012

Abstract: D019 D020 D023 EDI8F32128C t462
Contextual Info: ELECTRONIC m DESIGNS INC SIE ]> • 323G114 a OGOlOTb 3=50 H E L D E D I8 F 3 2 1 2 8 C Etoctrenle DülQfMInc. High Speed Four Megabit SRAM Module MMMAm 128Kx32 Static RAM CMOS, High Speed Module Features The EDI8F32128C isa high speed4 megabitStatic RAM module organized as 128K words by 32 bits. This module is

Contextual Info: ^E D I EDI9F321024C Electronic Designs Inc. High Speed 32 Megabit SRAM Module 1M egx32CM 0S Static RAM Module Features The EDI9F321024C CMOS Static RAM Module is organized as 1Meg x 32 bits. 1M egx32 bits CMOS Static Random Access Memory Module The module is constructed from 32 128Kx8 Static

EDI8M8257C

Abstract: DDD15L
Contextual Info: ELECTRONIC DESIGNS INC S1E D 3230114 W D Ì 00012b2 Ö7T I EL3> EDI8M8257C B«dronlc DM igro Inc.a High Speed Two Megabit SRAM Module Pfôiy1DIMIHIV 256Kx8 Static RAM CMOS;Module Features T - Y é -Z3 -/</ The EDI8M8257C is a 2048K bit CMOS Static RAM 256Kx8 bit CMOS Static

Contextual Info: PROJECT NO. SIMILAR ITEM DWG. NO. SD-3530 I- 5 3 I— O O 33 CD ° ¡5 oo 5 NEW RELEASED NO. K O R 2 0 0 1-0048 EC DRW Ns K oSo K IM C H 'K s / CO 11130 J.K.O H w A P P R : CoWoLEE REV D E S C R IP T I O N 2l 9o a33 o > 7.2 4.4 CJ 12.8) 33 33 > > “0 £

Contextual Info: ^EDI _ ELECTRO NIC DESIGNS IN C EDI7F32128C High Performance Four Megabit Flash EEPROM 128Kx32 CMOS Flash EEPROM Module r a iy ia iM ï Features The EDI7F32128C is a 5V-0nly In-System Programmable 128Kx32 bit C M O S Flash and Erasable Read Only Memory Module. Organized as

Contextual Info: ^EDI EDI8F321024C ELECTRONIC DESIGNS INC. • High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This 1024Kx32 bit CMOS Static

Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static

Contextual Info: ^EDI EDI8F82045C ELECTRONIC DESIGNS IN C Commercial Sixteen Megabit SRAM Module 2 Megabits x 8 Static RAM CMOS, Module Features The EDI8F82045C is a 16 megabit CMOS Static RAM based on four 512Kx8 Static RAMs mounted on a multi­ layered epoxy laminate FR4 substrate.

CDQ15

Abstract: COOA EDH816H64C 1024K-BIT
Contextual Info: ELECTRONIC D E S I GN S INC 30E D • 32301m ■ EDI 0dQat.3b 1 ■ ED H 8 1 6 H 6 4 C E t*d ic n le D tilg ra I n c . High Speed Megabit SRAM Module 64Kx16 CMOS, High Speed Programmable, Static RAM Module Features The EDH816H64C Isa 1024K-bit high speed CMOS

T1IS

Abstract: GQQ0731 ragy 3530114
Contextual Info: ELECTRONIC DESIGNS INC 30 E D • 32301m 0000730 M ■ EDI8F8512C/LP/P m D i Ettekonle Dtslgni In«. • Commercial Four Megabit S R A M Module 512Kx8 Static R A M CM O S, Module P IS lU iO Features iá O T T - V 6 - Z 3 - H The EDI8F8512C/LP/P is a 4096K b'lt CMOS Static 512Kx8 bit CMOS Static