128KX9 Search Results
128KX9 Datasheets Context Search
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Contextual Info: fax id: 5415 W CYPRESS CY7C4281 CY7C4291 PRELIMINARY 64K/128Kx9 1 Meg Deep Sync FIFOs Features • P in -c o m p a tib le d en sity u p g ra d e to ID T 722 01 /11/21/31/41/51 H ig h-speed , low -p ow er, first-in firs t-o u t F IF O m em o ries Functional Description |
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cy7c4281cy7c429164k/128kx9cy7c42x1 | |
330 j65
Abstract: CY7C4261V CY7C4271V CY7C4281V CY7C4291V CY7C42X1V
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61v/cy7ccy7c4261v/cy7c4271vcy7c4281v/cy7c4291v16k/32k/64k/128kx9+8 | |
CY7C4281V
Abstract: CY7C4291V CY7C42X1V
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cy7c4281vcy7c4291v64k/128kx9cy7c4281/91+2 | |
4281VContextual Info: fax id: 5423 CY7C4281V CY7C4291V •■■■■■■'■jH/m'r. 'S^ia S S K , : ,„*$& :*■ _ . " T jjjl? 64K/128Kx9 Low Voltage Deep Sync FIFOs • Pin-compatible 3.3V solutions for CY7C4281/91 Features • 3.3V operation for low power consumption and easy |
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cy7c4281vcy7c4291v64k/128kx967-mhz+1 | |
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Contextual Info: fax id: 5423 CY7C4261V/CY7C4271V CY7C4281V/CY7C4291V 16K/32K/64K/128Kx9 Low Voltage Deep Sync FIFOs Features Functional Description 3.3V operation for low power consumption and easy integration into low voltage systems High-speed, low-power, first-in first-out FIFO |
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cy7c4261v/cy7c4271vcy7c4281v/cy7c4291v16k/32k/64k/128kx9cy7c4261v+5 | |
CY7C4261V
Abstract: CY7C4271V CY7C4281V CY7C4291V CY7C42X1V
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cy7c4261v/cy7c4271vcy7c4281v/cy7c4291v128kx9cy7c4261v+6 | |
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Contextual Info: fax id: 5415 CYPRESS PRELIMINARY CY7C4281 CY7C4291 64K/128Kx9 Deep Sync FIFOs Features • Pin-compatible density upgrade to IDT72201/11/21/31/41/51 • High-speed, low-power, first-in first-out FIFO memories • 64k X 9 (CY7C4281) • 128k X 9 (CY7C4291) |
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cy7c4281cy7c429164k/128kx9idt72201/11/21/31/41/51+4 | |
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Contextual Info: ^EDI EDI2090C-EDI2095C Electronic Designs Inc. High Performance Synchronous SRAM 128Kx9 Monolithic High Speed Synchronous Static RAM Features The EDI2090C is a high performance, 1 megabit synchronous static RAM organized as 128Kx 9 bits, available in six versions. |
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128kx965mhzedi2090c-edi2095cedi2090c+4 | |
XTCE
Abstract: oasi CY7C4282 CY7C4292 EF 6802 P
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cy7c4282cy7c4292100-mhzxtce+2 | |
CY7C4282V
Abstract: CY7C4292V
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cy7c4282vcy7c4292v64k/128kx9100-mhz+1 | |
CY7C4282V
Abstract: CY7C4292V
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cy7c4282vcy7c4292v64k/128kx967-mhz | |
oasi
Abstract: CY7C4282 CY7C4292 ed 9225
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cy7c4282cy7c4292100-mhzoasi+1 | |
CY7C4281
Abstract: CY7C4291 IDT72201
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cy7c4281cy7c4291100-mhz32-pin+3 | |
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Contextual Info: fax id: 5424 •■■■■■■\fct>cw.-. _ CY7C4282V CY7C4292V 5^” . '“‘T 64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion Features Functional Description 3.3V operation for low power consumption and easy integration into low-voltage systems |
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cy7c4282vcy7c4292v64k/128kx967-mhz | |
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cy7c42x1Contextual Info: fax id: 5415 CY7C4281 CY7C4291 64K/128Kx9 Deep Sync II FIFOs Featu res Functional Description • High-speed, low-power, first-in first-out FIFO memories . 64k x 9 (CY7C4281) • 128k x 9 (CY7C4291) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle |
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cy7c4281cy7c429164k/128kx9100-mhz+3 | |
KJh transistorContextual Info: PRELIMINARY DATA SHEET NEC OCT 2 fi 1992 ELECTRON DEVICE MOS INTEGRATED C IR CU IT / . ¿i P D 4 3 1 3 128KX9 BIT CMOS STATIC RAM DESCRIPTION The «PD431003 is a high speed, low power, 128K words by 9 bits CMOS static RAM fabricated with advanced silicon-gate CMOS technology. The ¿¡PD431003 is a low standby power device using |
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128kx9upd431003pd431003kjh transistor | |
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Contextual Info: fax id: 5424 CY7C4282V CY7C4292V ^CYPRESS pmummm 64K/128Kx9 Low Voltage Deep Sync FIFOs w/ Retransmit & Depth Expansion Features Functional Description • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO |
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cy7c4282vcy7c4292v64k/128kx967-mhz | |
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Contextual Info: fax id: 5423 CYPRESS CY7C4281V CY7C4291V PRELIMINARY 64K/128Kx9 Low Voltage Deep Sync FIFOs Features • Pin-compatible 3.3V solutions for CY7C4281/91 • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO |
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cy7c4281vcy7c4291v64k/128kx9cy7c4281/91+1 | |
M/lm 4291Contextual Info: fax id: 5415 ^ • J ^ r n n P W CY7C4281 CY7C4291 PRELIMINARY 64K/128Kx9 Deep Sync FIFOs Features • P in -c o m p a tib le d e n s ity u p g ra d e to ID T 7 2 2 0 1 /1 1/21/31/41/51 • H ig h -s p e ed , low -pow er, first-in firs t-o u t F IF O m em o ries |
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cy7c4281cy7c429164k/128kx9m/lm 4291 | |
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Contextual Info: fax id: 5419 CY7C4282 CY7C4292 PRELIMINARY 64K/128Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 64k x 9 (CY7C4282) • 128k x 9 (CY7C4292) • 0.5 micron CMOS for optimum speed/power • High-speed, Near Zero Latency (True Dual-Ported |
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cy7c4282cy7c429264k/128kx9100-mhz | |
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Contextual Info: EL ECT RONIC DESIGNS INC ^EDI E la d r o n J c D s s l g n i In o . 30E D I 3530114 0000530 7 • EDI2090C-EDI2095C 1 High Performance Synchronous SRAM 128Kx9 Monolithic High Speed Synchronous Static RAM T .V 6 -Z 3 -W Features The E D I2 0 9 0 C is a high performancet 1 megabit |
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edi2090c-edi2095c128kx9edi2090c128kx+5 | |
CY7C4282V
Abstract: CY7C4292V
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cy7c4282vcy7c4292v64k/128kx9100-mhz | |
CY7C4282
Abstract: CY7C4292 7C4292
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cy7c4282cy7c429264k/128kx9100-mhz+2 | |
CY7C4281
Abstract: CY7C4291
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cy7c4281cy7c429164k/128kx9idt72201/11/21/31/41/51+3 | |