D031 Search Results

Contextual Info: 5TE T> m 0257527 D0312M0 b37 • AMD3 _ A]>V fllCRQ TELECOM -p-ir-n- ? Am7901 B/C Advanced Micro Devices Subscriber Line Audio-Processing Circuit (SLAC) WORLD-CHIP DISTINCTIVE CHARACTERISTICS ■ Combination CODEC and Fitter ■ No trimming or adjustments required

BUV26

Abstract: BUV26A 11/BUV26
Contextual Info: PHILIPS INTERNATIONAL 4SE D 711002b D031GbT 1 EiPHIN BUV26 BUV26A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a T 0-22 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.

D0310

Abstract: BUV27AF BUV27F L100 A10q 27af
Contextual Info: _ 711QäBfci liU □ Cb D0310ñS T D P H I N I I PHILIPS INTERNATIONAL MSE ]> O BUV27F BUV27AF J l T -3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS H igh-voltage, high-speed, glass-passivated npn p o w er transistor in a S O T 1 8 6 envelope w ith electrically

Contextual Info: 3QE 3> • 7^237 D0311S1 =1 " 3 S- pô\~ f Z 7 SGS-THOMSON ^ 7# 5 L iÛ T O « ! 2 N2368 S G S-THOMSON HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2368 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed spe­

Contextual Info: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency

Contextual Info: N E C ELECTRONICS INC 3flE D • ^ 2 7 3 2 5 D031b04 1 ■ NECE M C -4 2 1 0 0 0 A 8 1 ,0 4 8 ,5 7 6 x 8 -B it CMOS D ynam ic RAM M odule NEC Electronics Inc. Description Pin Configurations The M C -421000A 8 is a fast-page 1,048,576-word by 8-bit C M O S dynam ic R A M module designed to operate

transistor 1002

Abstract: transistor 835 BFQ295 BFQ296
Contextual Info: b b 5 3 T 31 D0317fl^ 573 • APX Preliminary specification Philips Semiconductors NPN HDTV video transistor —^ BFQ296 N FEATURES AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product

SCR TYN 410

Abstract: SCR TYN Series TYN 725 FTH A 001 26 10 tvn 610 33n15 TYN 30A
Contextual Info: 3GE » • 7^237 D031444 D ■ ' T ?2.S'iS' S C S - T HH O O M M S S O N ¡ I L H O H » * ! T X N / T Y N 0 5 1 0 -► 1 0 1 0 S G S-THOMSON THYRISTORS ■ GLASS PASSIVATED CHIP . POSSIBILITY OF MOUNTING ON PRINTED CIRCUIT ■ AVAILABLE IN NON-INSULATED VERSION ->

Contextual Info: Philips Semiconductors b b5 3 T 31 D0317fl^ 573 | • APX Preliminary specification NPN HDTV video transistor ^ BFQ296 N FE A T U R E S AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages • Low output capacitance PIN 1 emitter • High gain bandwidth product

lc 945 p transistor NPN

Abstract: BFR96S
Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

Contextual Info: Ph|JjP^ j2jconductors^^B^ ^^53*131 D0317S7 7T0 • AP X ^^^^relimina^^specification NPN HDTV video transistor BFQ293 N AMER P H I L I P S / D I S C R E T E FEATURES b^E J> PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter

BTA10

Contextual Info: 3ÜE 7 ^ 7# » • 7 ^ 2 3 7 D031S12 2 ■ _ " p ¿ S ' i S — S G S - T H O M S O N [ ¡ « ^ » [itm r iH m o o s _ B T A 1 0 A W S 6 S-TH0MS0N SNUBBERLESS TRIACS ■ It r m s = 1 0 A at Tc = 90 °C. : 200 V to 800 V. « Ig t = 75 mA (QI-ll-Ill .

d0313

Abstract: 2N1778 2n1772 2N1770 2n2619
Contextual Info: 3DE ]> • 7^237 D031354 1 ■ S G S -T H O M S O N Q JIC TM M Û S T '2 5 -IS 2N 1770 2N 1778 2 N 2 6 19 S G S-TH0MS0N THYRISTORS ■ GLASS PASSIVATED CHIP ■ HIGH STABILITY AND RELIABILITY A TO 64 Metal DESC RIPTIO N General purpose SCR suited for power supplies up

Contextual Info: SSB_D028-D031_GB 01.10.2003 12:21 Uhr Seite D.31 WDT 1.5/1 1.5 mm2 Disconnection lower level 6.4 x 112 x 66.7 10 / 2.5 0.13 . 2.5 WDT 1.5/2 1.5 mm2 Disconnection both levels IEC 60947-7-1 / VDE 0100-537 IEC UL CSA 250 300 300 10 10 10 1.5 AWG 22 …14 AWG 26…14

d0320

Abstract: RL-D0320SBRW RL-D0310GDBW RL-D0310YCBW RL-D0320OCAW RL-D0320RCBW RL-D0320
Contextual Info: 0.3 Dual Digit Display. Part Number: RL-D0310GDBW RL-D0320SBRW RL-D0310YCBW RL-D0320RCBW RL-D0320OCAW Features 1.LOW POWER CONSUMPTION. 2.RELIABLE AND RUGGED. 3.EXCELLENT UNIFORMITY OF LIGHT OUTPUT. 4.SUITABLE FOR LEVEL INDICATOR. 5.I.C COMPATIBLE. 6.LONG LIFE-SOLIDSTATE RELIABILTY.

BFQ108

Contextual Info: ^ 5 3 ^ 3 1 D031bb4 512 M APX Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ108 fc,*ÌE D N AMER PHILIPS/DISCRETE PINNING DESCRIPTION PIN The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily intended for use

Contextual Info: 3DE D fZ 7 ^ 7# • 7^237 D0316b0 3 ■ _' T ' Z S - l S S C S -T H O M S O N TXD V 208 -> 808 S G S-THOMSON ALTERNISTORS ■ di/dt c > 28 A/ms (400 Hz) ■ INSULATING VOLTAGE : 2500 V rms (t < 1 mn - F = 50 Hz) ■ UL RECOGNIZED (E81734) A PPLICATIO N S

BTA06-200

Contextual Info: 3QE D H 7^237 D0314Ô4 1 • ^ T - Z S - [ 55 SGS-THOMSON B T A 06 A W [ » ^ t & e g T T liM O t g S S G S-TH0MS0N SNUBBERLESS TRIACS ■ Itrms = 6 A at Tc = 95 °C. ■ V drm : 200 V to 800 V. ■ Ig t = 75 mA Ql-II-lll . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 60 A.

cd018

Contextual Info: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C

2269H

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

PIC16f690 example codes

Abstract: PIC16F631 PIC16f690 spi example codes PIC16F677 PIC16F687 PIC16F689 thermistor 10k PIC16F690 PWM c programming Assembler programming for PIC 16f690 temperature MPASM 16f690
Contextual Info: PIC16F631/677/685/687/689/690 Data Sheet 20-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology 2006 Microchip Technology Inc. Preliminary DS41262B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

PIC18F example code CAN bus

Abstract: 18f14k50 PIC18f external interrupt example codes PIC18F sleep mode example 3 phase pwm generator pic18f PIC18f clearing ram pic18f for 3 phase inverter pic 18f14k50 PIC18f example codes PIC18F45k20 examples
Contextual Info: PIC18F/LF1XK50 Data Sheet 20-Pin USB Flash Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41350D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

PIC18F25J11

Abstract: PIC18F26J11 pic 18f26j11 PIC18f example codes CTMU PIC18F46J11 PIC18F24J11 DS39932D PIC18F usart init example PIC18 example C18 RTCC PIC16 lin bus example codes C
Contextual Info: PIC18F46J11 Family Data Sheet 28/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2011 Microchip Technology Inc. DS39932D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.