BUV27F Search Results

BUV27AF

Abstract: BUV27F
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV27F/AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- BUV27F 150V(Min)- BUV27AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high

D0310

Abstract: BUV27AF BUV27F L100 A10q 27af
Contextual Info: _ 711QäBfci liU □ Cb D0310ñS T D P H I N I I PHILIPS INTERNATIONAL MSE ]> O BUV27F BUV27AF J l T -3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS H igh-voltage, high-speed, glass-passivated npn p o w er transistor in a S O T 1 8 6 envelope w ith electrically

V27AF

Contextual Info: PHILIPS INTERNATIONAL mse: » 7 iiQasb 0031005 t b IPHIN BUV27F BUV27AF o SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control

Contextual Info: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 D02fl4b4 TT3 I IAPX BUV27F BUV27AF b'lE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control

z9s21

Abstract: BUV27AF BUV27F 27af BU100
Contextual Info: N AMER PHILIPS/DISCRETE bTE » • bbSB^l DD2flMbM ‘ì'ìa HIAPX BUV27F BUV27AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a S O T 1 8 6 envelope w ith electrically isolated m ounting base, intended fo r use in converters, inverters, switching regulators, m o to r control

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI