A10Q Search Results

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

KM44C4100BK

Contextual Info: KM4 4 C 4 1 OOB K CMOS D R AM ELECTRONICS 4 M X 4 Bit C M O S Dynamic H A M with Fast Page M ode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series 1KSMB Series Description Uni-directional Bi-directional The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

ALY 34

Abstract: 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34
Contextual Info: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES S M JS 851A - N O VEM BER 1997 - REVISED M ARCH 1998 Organization . . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks

KM44V4100BS

Abstract: Oi24 A10QZ
Contextual Info: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

A10q

Abstract: HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8
Contextual Info: blE D • HMTbSGB DD23 351 E7M ■ H I T 2 H M 511 6 4 0 0 S e r i e s - HITACHI/ LOGIC/ARRAYS/MEM 4,194,304-w ord x 4-bit D ynam ic R andom A c c e s s Memory The H itachi H M 5116400 is a CMOS dynamic RAM organized 4,194,304 w ords x 4 bits. It employs the most advanced CMOS technology for

EL 817 C205

Abstract: Trident cyber 9525 HC sr05 ci tl594 RN600 RESISTOR TC299 UPS A1000 M36N1 trident vga TRIDENT CYBER
Contextual Info: Model : A1000 Mobile Pentium III with Banister Chipset Revision History A 04/05/2000 B 05/15/2000 ORIGINAL RELEASE PageOl Page02 Page03 Page04 Page05 Page06 Page07 Page08 Page09 PagelO Pagel1 Pagel2 Pagel3 Pagel4 Pagel5 Pagel 6 Pagel7 Pagel8 Pagel9 Page20

Contextual Info: KM41C16002A CMOS DRAM 16Mx1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package

Contextual Info: S E M IC O N D U C T O R w w w .fairchildsem i.com tm RC5031 A d j u s t a b l e S w i t c h i n g Regul at or Description • High power switched-mode DC-DC controller can source in excess of 13A • Output voltage adjustable from 1.5V to 3.6V • 85% efficiency

ATINY 12

Contextual Info: r r u n TECHNOLOGY FEATURES • UL Recognized T O LTC694-3.3/LTC695-3.3 m 3.3V Microprocessor Supervisory Circuits DESCRIPTlOn File # E145770 The LTC 694-3.3/LTC695-3.3 provide complete 3.3V ■ Guaranteed Reset Assertion at Vqc = 1V power supply monitoring and battery control functions.

Contextual Info: KM44V4000BS CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

HY5117400A

Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
Contextual Info: HY5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The HY5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

n10u

Abstract: N10H A10N A10y 1KSMB10A 1KSMB11A 1KSMB12A 1KSMB75CA n10g 1KSMB33A
Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1000W RoHS 1KSMB Series Description The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

N10Y

Abstract: B10F n10Z n10u
Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series RoHS Pb Description The 1KSMB series is designed speciically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

Contextual Info: b l E D • 4 ^ i , 2 0 3 H M 5116100 S e r i e s - 0 0 2 3 3 2 b O i l ■ H I T S HITACHI/ «-o ì i c / arrays / be * 16,777,216-w ord x 1 -b it D yn a m ic R andom A c c e s s M em ory The H itachi H M 5116100 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It

Contextual Info: M O T O RO LA SEMICONDUCTOR TECHNICAL DATA Advance Information MC74LCX16543 Low-Voltage CMOS 16-Bit Latching Transceiver LCX With 5V-Tolerant Inputs and Outputs 3-State, Non-Inverting The MC74LCX16543 is a high performance, non-inverting 16-bit latching transceiver operating from a 2.7 to 3.6V supply. The device is

Contextual Info: TMS28F004Axy, TMS28F400Axy 52 42 88 BY 8-B IT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A - JANUARY 1996 - REVISED AUGUST 1997 • Organization . . . 524288 By 8 Bits 262144 By 16 Bits • Array-Blocking Architecture - One 16K-Byte Protected Boot Block

Contextual Info: TMS28F008Axy TMS28F800Axy 8 3 8 8 6 0 8 BOOT-BLOCK FLASH MEMORIES _ * * 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - Seven 128K-Byte Main Blocks - One 16K-Byte Protected Boot Block

a14q

Contextual Info: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y 5 1 1 6 1 0 0 S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

8192-WORD

Abstract: SM69CE72
Contextual Info: SM69CE72, SMJ69CE72 8192-WORD BY 9-BIT STATIC RAMS A P R IL 1 9 8 7 - R E V I S E D M A Y 1 9 8 8 • Military Temperature Range . 125°C M Suffix • Fast Static Operation • Battery Back-Up Operation . Retention • (T O P V IE W ) A4£ 1 u A5Q 2 - 5 5 ° C to

TAA 691

Contextual Info: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

KM44C4100BS

Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
Contextual Info: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle