N10U Search Results

n10u

Abstract: n10e Diode N10Z N10Y N10Z 738 39A diode N10H n10g p10j n10p
Contextual Info: Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor RoHS 1KSMBJ Series The 1KSMBJ range of surface mount protectors utilizes the proven glass passivated technology used in many Littelfuse product portfolios. Rated at 1000 watts 10 x 1000 µs double

fire alarms using ic 555

Abstract: burglar alarms using ic 555
Contextual Info: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

21n60G

Abstract: FMW21N60G 21N60 HER 103 diode
Contextual Info: DATE CHECKED Sep.-27-'04 CHECKED Sep.-27-'04 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series 1KSMB Series Description Uni-directional Bi-directional The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

FMD03N60G

Abstract: 03n60 on semiconductor marking code dpack Diode SMD SJ 28
Contextual Info: DATE DRAWN Oct.-27-'05 CHECKED Oct.-27 -'05 CHECKED Oct .-27 -'05 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

O10F

Abstract: N10H n10u n10e
Contextual Info: Silicon Avalanche Diodes 1000W Surface Mount Transient Voltage Suppressor IKSMBJ Series The 1KSMBJ range of surface mount protectors utilizes the proven glass passivated technology used in many Littelfuse product portfolios. Rated at 1000 watts 10 x 1000 µs double

smd H04

Abstract: Diode SMD SJ 65a FMI65N15T2 Diode SMD SJ 02 SJ 65a smd fuses 39a JI 32 FMB65N15T2 FMC65N15T2 fuji smd
Contextual Info: Device Name DATE DRAWN Jun.-17-'05 CHECKED Jun.-17-'05 CHECKED Jun.-17-'05 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,

2sk4005

Abstract: 2SK4005-01MR mosfet 2sk4005 MS5F5984 2sk400501mr 2SK400 MOSFET 900V TO-220
Contextual Info: DATE DRAWN Jan.-31-'05 CHECKED Jan.-31-'05 Jan.-31-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

16n60e

Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
Contextual Info: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

12N50E

Abstract: 12N50ES FMI12N50E Diode type SMD marking SJ Sj 07 DIODE SMD FUJI DATE CODE fmi12n50es and/sj 1408
Contextual Info: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

lh51100

Abstract: lh511000
Contextual Info: PRELIMINARY LH511000UL C M O S 1M 1 2 8 K x 8 S ta tic R A M FEATURES DESCRIPTION • 131,072 x 8 bit organization The LH511000UL is a 1M bit static RAM organized as 131,072 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access times:

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

16N60G

Abstract: HER 107 diode HER 103 diode FMW16N60G 16N60
Contextual Info: DATE CHECKED Jun.-01-'05 CHECKED Jun.-01-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

Contextual Info: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

16N50ES

Abstract: 16n50e MS5F7226 RGS18 smd code font type
Contextual Info: Device Name DATE DRAWN Nov.-21-'08 CHECKED Nov.-21-'08 CHECKED Nov.-21-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

2sk4004

Abstract: 2SK4004-01MR 2SK400 MS5F5983 2sk40 to-247 to-220
Contextual Info: DATE DRAWN Jan.-31-'05 CHECKED Jan.-31-'05 Jan.-31-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

Diode SMD SJ 94

Abstract: 16N60ES FUJI DATE CODE DIODE marking code SJ
Contextual Info: Device Name DATE DRAWN Oct.-10-'08 CHECKED Oct.-10-'08 CHECKED Oct.-10-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

n10u

Abstract: N10H A10N A10y 1KSMB10A 1KSMB11A 1KSMB12A 1KSMB75CA n10g 1KSMB33A
Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1000W RoHS 1KSMB Series Description The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

N10Y

Abstract: B10F n10Z n10u
Contextual Info: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series RoHS Pb Description The 1KSMB series is designed speciically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

TMS320C64xx

Abstract: 6713 SPRU266 SPRU401J pulse code interval encoding using c6713 pulse code interval encoding using c6713 timer 458 TIMER CIRCUIT COLLECTION B536 rld bh-16 SPRU401 TMS320C64xx cpu
Contextual Info: TMS320C6000 Chip Support Library API Reference Guide Literature Number SPRU401J August 2004 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any

ITU-R BT.1120 to BT.656

Abstract: video display processor cd 4847 3CBST BT 656 PIN DIAGRAM BT 1120 bt.656 parallel to RGB 565 YC20 HRLD 100 application notes ITU-R BT.1120 1280
Contextual Info: TMS320C64x DSP Video Port/VCXO Interpolated Control VIC Port Reference Guide Literature Number: SPRU629C August 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

PK P6KE 200A

Abstract: SLD30-018 436 6V8A 1.5KA36CA N10H kt 201-500 P6KA36CA P6KA 335 Diode N10Z P6KA18CA
Contextual Info: PRODUCT CATALOG & DESIGN GUIDE DIODE Transient Voltage Suppression TVS Diode Products Littelfuse Circuit Prot Solutions Portf Consumer Electronics Telecom White Goods Medical Equipment TVSS and Power S DESIGN SUPPORT Live Application Design and Technical Support—Tap into our expertise. Littelfuse engineers are available around the world to help you address design challenges and develop

07N90G

Abstract: 07N90 fmw07n90g
Contextual Info: DATE CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME DWG.NO. Th i s m at er i al and t he i nfo r mat i on her ei n i s t he p r ope r t y of Fuj i El ect r i c C o.,Lt d. They s hal l be nei t her r epr oduced, copi ed, l ent , or d i s cl os e d i n a ny way what s o ev er f or t he us e of any

FMW73N20G

Contextual Info: DATE DRAWN Jul.-29-'05 CHECKED Jul.-29-'05 CHECKED Jul.-29-'05 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used