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    FMC16N50E

    Contextual Info: FMC16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


    Original     		fmc16n50esfmc16n50e PDF

    FMV07N90E

    Abstract: fmh*23N50E FMP08N80E FMV07N70E FMV06N80E FMC07N65E FMV13N80E D2PACK FMI07N90E FMV07N65E
    Contextual Info: EHV or Power Electronics Power MOSFET : SuperFAP-E3 series This new power MOSFET realized the low switching loss and low switching noise. • Features ・About 20% lower power loss than conventional type, under the same noise-level condition. ・Lower RDS (on)


    Original     		o-220o-220ffmh28n50esfmh23n50es+16fmh21n50esfmh280efmc06n80efmi09n70efmi07n70efmc09n70efmv07n90efmh*23n50efmp08n80efmv07n70efmv06n80efmc07n65efmv13n80ed2packfmi07n90efmv07n65e PDF

    16N50ES

    Abstract: 16n50e MS5F7226 RGS18 smd code font type
    Contextual Info: Device Name DATE DRAWN Nov.-21-'08 CHECKED Nov.-21-'08 CHECKED Nov.-21-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		fmi16n50esfmc16n50esfmb16n50esms5f7226+5h04-004-0316n50es16n50ergs18smd code font type PDF