16N60 Search Results

16N60

Abstract: 16N60C2D1
Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

16N60

Abstract: 16n60 b
Contextual Info: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT1 LU ^C 25 V CE(sat)typ Short Circuit SOA Capability Symbol V CES Maximum Ratings Test Conditions v CES Tj = 25°C to 150°C 600 V VcoR T,J = 25°C to 150°C; RG E = 1 MCI 600 V VGES VG E M Continuous

16N60B2D

Contextual Info: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings

B1116

Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40

Contextual Info: □ IXYS IXSH 16N60U1 Low VCE sat „, „ IGBT with Diode V CES I C25 V CE(sat)typ Short Circuit SOA Capability 600V 16A 1.8V Preliminary data sheet Maximum Ratings Symbol TestConditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i

16N60

Abstract: IXSP16N60 IXSA16N60
Contextual Info: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT V CES = 600V I C25 = 16A VCE(sat)typ = 1.8V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES

Contextual Info: IXSH 16N60U1 VCES = 600V = 16A IC25 VCE sat typ = 1.8V Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous

16N60C2D1

Abstract: 16N60C2 E153432 IXGC16N60C2D1
Contextual Info: IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

16N60

Abstract: RGE 17-18 7B732 IXSA16N60 IXSP16N60
Contextual Info: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT Short Circuit SOA Capability V ' ces Tj = 25°C to 150°C 600 V v CGR Tj = 25°C to 150°C; RGE = 1 Mi2 600 V vy g e s Continuous ±20 V VGEM Transient ±30 V 'c 2 5 Tc = 25 °C 32 A 'c 9 0 Tc = 90°C

Contextual Info: n ix Y S IXSA 16N60 v CES IXSP 16N60 ^C25 IGBT LOW V CE sat 600V 16A 1.8V v CE(sat)typ Short Circuit SOA Capability Prelim inary Data Sheet Symbol Test Conditions Maximum Ratings v CES Tj = 25° C to 150° C 600 V VCGR v GES Tj = 25°Cto150°C;RGE=1 MQ 600

16N60

Abstract: IXGC16N60B2D1
Contextual Info: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

16N60

Abstract: 16N60C2D1 IXGC16N60C2D1 16N60C2
Contextual Info: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings

16N60C2D1

Abstract: 16n60c2 16N60
Contextual Info: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings

b1113

Abstract: diode b18 35N120AU1 40N60CD1 diode b129 50N60BD1 30N60BD1 40N60BD1 IXSH 35N120AU1 diode b14
Contextual Info: SCSOA IGBT S-Series Contents IGBT with Fast Diode VCES max IC Low VCE sat TC = 25 °C VCE(sat) max PLUS247 ISOPLUS (IXSX) 247TM (IXSR) TC = 25 °C TO-247 (IXSH) TO-264 (IXSK) TO-268 (IXST) miniBLOC (IXSN) Page V A V 600 32 1.8 ➤IXSH 16N60U1 B1-4 48 2.2

16N60C2D1

Abstract: 16N60 IF110
Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGH 16N60C2D1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM

920vc

Contextual Info: n ix Y S L O w V C B M IG IXSH 16N60U1 VCES B T with Diode 600V 16A 1.8V IC25 v Short Circuit SOA Capability CE sat typ Preliminary data sheet Symbol Test Conditions VCES Tj =25°Cto150°C 600 V v CGR Tj = 25° C to 150° C; R G6 = 1 MO 600 V v GES Continuous

igbt induction cooker

Abstract: IF110 16N60B2D1 16N60 IXGH 16N60B2D1 IXGH16N60B2D1
Contextual Info: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

16N60

Abstract: 16N60B2 16N60B2D IXGC16N60B2D1 E153432
Contextual Info: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

16N60

Abstract: igbt induction cooker IXGH 16N60B2D1 16N60B2 IF110 16N60B
Contextual Info: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ

16N60B2D1

Abstract: igbt induction cooker IXG IGBT
Contextual Info: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT VCES = 600 V = 40 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns IXGA 16N60B2 IXGP 16N60B2 IXGA 16N60B2D1 IXGP 16N60B2D1 D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

Contextual Info: IXSH 16N60U1 VCES = 600V = 16A IC25 VCE sat typ = 1.8V Low VCE(sat) IGBT with Diode Short Circuit SOA Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous

fma16n60e

Abstract: FMA16N60E,16N60E
Contextual Info: DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

16n60e

Abstract: 16N60 TO-220F JEDEC
Contextual Info: DATE CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor

16n60e

Abstract: marking code EA SMD MOSFET Method CF st smd diode marking code ex KE 16A DIODE
Contextual Info: Device Name DATE DRAWN Mar.-30-'07 CHECKED Mar.-30-'07 CHECKED Mar.-30-'07 NAME APPROVED : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used