16N60B2D
Contextual Info: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings
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16n60b216n60b2d1isoplus220tmic110+6id110ixgc16n60c2d1220tme153432405b216n60b2d
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16N60
Abstract: IXGC16N60B2D1
Contextual Info: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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16n60b216n60b2d1isoplus220tmic110+5id110ixgc16n60b2d1220tma/405b216n60
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igbt induction cooker
Abstract: IF110 16N60B2D1 16N60 IXGH 16N60B2D1 IXGH16N60B2D1
Contextual Info: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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16n60b2d1ic110if110o-247+7065b1728b1123b1igbt induction cooker16n60ixgh 16n60b2d1ixgh16n60b2d1
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16N60
Abstract: 16N60B2 16N60B2D IXGC16N60B2D1 E153432
Contextual Info: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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16n60b216n60b2d1isoplus220tmic110+7id110ixgc16n60b2d1220tm0405b216n6016n60b2de153432
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16N60
Abstract: igbt induction cooker IXGH 16N60B2D1 16N60B2 IF110 16N60B
Contextual Info: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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16n60b2d1ic110if110o-247+8065b1728b1123b116n60igbt induction cookerixgh 16n60b2d116n60b216n60b
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16N60B2D1
Abstract: igbt induction cooker IXG IGBT
Contextual Info: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT VCES = 600 V = 40 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns IXGA 16N60B2 IXGP 16N60B2 IXGA 16N60B2D1 IXGP 16N60B2D1 D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600
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16n60b216n60b2d1ic110id110+4728b1123b1igbt induction cookerixg igbt
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7N60B equivalent
Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain
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7n60b-2x7n60c-2x16n60b2-3x16n60c2-3x+1230n60b2-4x30n60c2-4x40n60b2-5y40n60c2-5y60n60b2-7y60n60c2-7y7n60b equivalent10n60bixgd28n1220n12016n60c2
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2
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