10N60B Search Results

10N60B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
10N60-B-TA3-T		Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.91KB	9

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Rochester Electronics LLC SSS10N60B N-CHANNEL POWER MOSFET
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DigiKey	SSS10N60B	Bulk			322	1 - 10 - 100 - 1000 $0.93 10000 $0.93	Buy Now
STMicroelectronics STG3P2M10N60B IGBT MOD 600V 19A 56W SEMITOP2
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DigiKey	STG3P2M10N60B	Bulk			30	1 - 10 - 100 $26.25 1000 $26.25 10000 $26.25	Buy Now
Vyrian	STG3P2M10N60B		776			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXSP10N60B2D1 IGBT PT 600V 20A TO-220-3
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DigiKey	IXSP10N60B2D1	Bulk			50	1 - 10 - 100 $1.92 1000 $1.92 10000 $1.92	Buy Now
IXYS Corporation IXSA10N60B2D1 IGBT PT 600V 20A TO-263AA
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DigiKey	IXSA10N60B2D1	Bulk			50	1 - 10 - 100 $1.95 1000 $1.95 10000 $1.95	Buy Now
New Advantage Corporation	IXSA10N60B2D1		66		1	1 - 10 - 100 $6.02 1000 $6.02 10000 $6.02	Buy Now
IXYS Corporation IXSH10N60B2D1 IGBT PT 600V 20A TO-247AD
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DigiKey	IXSH10N60B2D1	Box			30	1 - 10 - 100 $2.47 1000 $2.47 10000 $2.47	Buy Now
New Advantage Corporation	IXSH10N60B2D1		209		1	1 - 10 - 100 $6.77 1000 $6.25 10000 $6.25	Buy Now

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10N60B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10n60b Contextual Info: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b	PDF
Contextual Info: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
10n60b Contextual Info: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2 10n60b	PDF
Contextual Info: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
10n60b Abstract: 10n60b2d1 Contextual Info: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V = 20 A I C25 V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2 10n60b 10n60b2d1	PDF
10N60 Abstract: power mosfet 200A MOSFET 10n60 UTC10N60 Power MOSFET 50V 10A 10n60b equivalent data book of 10N60 mosfet mosfet 10a 600v MOSFET 10n60 Data sheet 10N60A Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a	Original	10N60 O-220 10N60 O-220F O-220F1 10N60L 10N60G QW-R502-119 power mosfet 200A MOSFET 10n60 UTC10N60 Power MOSFET 50V 10A 10n60b equivalent data book of 10N60 mosfet mosfet 10a 600v MOSFET 10n60 Data sheet 10N60A	PDF
MOSFET 10n60 Abstract: 10n60b 10N60 10N60A 10n60 mosfet g 10N60 f 10n60 c G 10N60 A equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	10N60 10N60 10N60L QW-R502-119 MOSFET 10n60 10n60b 10N60A 10n60 mosfet g 10N60 f 10n60 c G 10N60 A equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet	PDF
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Contextual Info: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2	PDF
8N65 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 產品變更通知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices	Original	IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
10N60 Abstract: 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a	Original	10N60 O-220 10N60 O-220F O-220F1 10N60L 10N60G QW-R502-119 10n60b equivalent data book of 10N60 mosfet MOSFET 10n60 Data sheet MOSFET 10n60 mosfet 10a 600v mosfet 300V 10A datasheet 10N60A g 10N60 power mosfet 600v	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	10N60 10N60 10N60L QW-R502-119	PDF