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30N60 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
30N60C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.6KB	1
30N60C3D		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	34.6KB	1

30N60 Price and Stock

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Bourns Inc BIDW30N60T Transistor: IGBT; Field Stop; 600V; 60A; 230W; TO247-3; Eoff: 0.45mJ
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	BIDW30N60T		399		32	1 - 10 - 100 $2.81 1000 $2.29 10000 $2.29	Buy Now
Avnet Americas	BIDW30N60T	Tube	117	16 Weeks	600	1 - 10 - 100 - 1000 $2.09 10000 $1.94	Buy Now
Newark	BIDW30N60T	Bulk	1,400		1	1 $6.68 10 $4.28 100 $3.71 1000 $3.56 10000 $3.56	Buy Now
TTI	BIDW30N60T	Tube			3,000	1 - 10 - 100 - 1000 - 10000 $2.07	Buy Now
Avnet Abacus	BIDW30N60T			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

Master Electronics	BIDW30N60T					1 - 10 - 100 $2.82 1000 $2.33 10000 $2.25	Buy Now
IXYS Corporation IXTH30N60P Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXTH30N60P		243		1	1 $12.39 10 $8.71 100 $6.91 1000 $6.91 10000 $6.91	Buy Now
IXYS Corporation IXXH30N60B3 Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXXH30N60B3		224		1	1 $6.66 10 $4.60 100 $4.28 1000 $4.28 10000 $4.28	Buy Now
Vishay Intertechnologies SIHF30N60E-GE3 Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SIHF30N60E-GE3		144		1	1 $6.62 10 $5.97 100 $5.08 1000 $5.08 10000 $5.08	Buy Now
TTI	SIHF30N60E-GE3	Tube	10,000		50	1 - 10 - 100 $3.55 1000 $3.16 10000 $3.16	Buy Now
EBV Elektronik	SIHF30N60E-GE3		1,850	39 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IGW30N60H3FKSA1 Transistor: IGBT; 600V; 30A; 187W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IGW30N60H3FKSA1		113		1	1 $4.08 10 $2.09 100 $1.87 1000 $1.42 10000 $1.39	Buy Now
Newark	IGW30N60H3FKSA1	Bulk	3,982		1	1 $4.68 10 $4.07 100 $2.65 1000 $2.39 10000 $2.39	Buy Now
Rochester Electronics	IGW30N60H3FKSA1		30		1	1 - 10 - 100 $1.37 1000 $1.22 10000 $1.15	Buy Now
EBV Elektronik	IGW30N60H3FKSA1			37 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	IGW30N60H3FKSA1		3,467			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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30N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
30n60b Abstract: 30N60 30N60C ic 931 Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30n60b 30n60c o-268 o-247 +230n60 ic 931	PDF
30N60P Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	30n60p 30n60ps o-268 plus220	PDF
Contextual Info: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30n60c5 o-247 20090209d	PDF
30N60P Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	30n60p 30n60ps o-268 plus220 +430n60 ixtq30n60p plus220smd equivalent for 30n60p	PDF
30n60 Abstract: 30N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2 ic110 o-220 30n60	PDF
30N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2 ic110 o-268	PDF
30n60c Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	30n60b 30n60c o-247 o-268	PDF
Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2d1 ic110	PDF
Contextual Info: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	30n60b 30n60c o-268	PDF
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	o-220 o-263 o-247 o-2680xst +1316n60 24n60 30n60 40n60 25n100 b1116 b1104 n60a b1118 10n120 b1102 b1126 35n120u1	PDF
1XYS Contextual Info: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il	OCR Scan	30n60b 30n60bs 13/10nm/lb o-247 +11xys	PDF
30n60b Abstract: 30n60 TO-247AA 15a020 Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	30n60bu1 o-268 ic110 o-247 +5728b1 30n60b 30n60 to-247aa 15a020	PDF
Contextual Info: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous	Original	30n60bu1 o-268 ic110	PDF
Contextual Info: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i	OCR Scan	30n60bd1 o-268 o-247	PDF

Contextual Info: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	30n60bd1 o-247 o-268	PDF
30N60B Abstract: 30N60C Contextual Info: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b 30n60c o-247 o-268	PDF
DSA003710 Contextual Info: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS	Original	30n60c5 o-247 20070625a dsa003710	PDF
30n60p Contextual Info: Advanced Technical Information IXTQ 30N60P IXTT 30N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 30 A ≤ 240 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V	Original	30n60p o-268 405b2	PDF
4013V Abstract: Siemens DIODE E 1220 30N60B2D1 Contextual Info: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30n60b2d1 ic110 o-247 o-268 +24013v siemens diode e 1220	PDF
MOSFET IXYS TO-220 Contextual Info: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)	Original	30n60c5 o-247 o-220 mosfet ixys to-220	PDF
Contextual Info: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	30n60c5 o-247 20080310b	PDF
UPS SIEMENS Abstract: 30N60C siemens servo motor siemens igbt Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)	Original	30n60c2 ic110 o-220 ups siemens +330n60c siemens servo motor siemens igbt	PDF
30n60 Abstract: 30N60P PLUS220SMD Contextual Info: Advanced Technical Information PolarHVTM Power MOSFET IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = 600 V = 30 A Ω RDS on ≤ 240 mΩ Symbol Test Conditions Maximum Ratings	Original	30n60p 30n60ps o-247 plus220 +230n60 plus220smd	PDF
Contextual Info: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	30n60c2d1 ic110 o-247 o-268	PDF

30N60 Search Results

30N60 Datasheets (2)

30N60 Price and Stock

Bourns Inc BIDW30N60T

IXYS Corporation IXTH30N60P

IXYS Corporation IXXH30N60B3

Vishay Intertechnologies SIHF30N60E-GE3

Infineon Technologies AG IGW30N60H3FKSA1

30N60 Datasheets Context Search

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30n60c

B1116

1XYS

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DSA003710

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4013V

MOSFET IXYS TO-220

UPS SIEMENS

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