30N60C2D1 Search Results
30N60C2D1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM |
Original |
30n60c2d1ic110o-247o-268 | |
30N60C2D1
Abstract: v922
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Original |
30n60c2d1ic110o-247o-268+4 | |
30N60C2D1Contextual Info: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM |
Original |
30n60c2d1ic110o-247o-268 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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Original |
ms-01310-pin5m-1994mo-229+10 |