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    40N50 Search Results

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    40N50 Price and Stock

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    TTM Technologies BD170240N50100AHF

    BALUN 17.7-23.6GHZ 50/100 0404
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    DigiKey () BD170240N50100AHF Cut Tape 3,730 1
    • 1 $2.12
    • 10 $1.50
    • 100 $1.14
    • 1000 $0.93
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    BD170240N50100AHF Digi-Reel 3,730 1
    • 1 $2.12
    • 10 $1.50
    • 100 $1.14
    • 1000 $0.93
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    BD170240N50100AHF Reel 4,000
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    Mouser Electronics BD170240N50100AHF
    • 1 $1.99
    • 10 $1.50
    • 100 $1.14
    • 1000 $0.72
    • 10000 $0.69
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    Richardson RFPD () BD170240N50100AHF 2,660 1
    • 1 $0.39
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    BD170240N50100AHF 4,000
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    ams OSRAM Group EGA2000-940-N-(500-PCS-REEL-PACKING)

    LASER DIODE 940NM 4W MODULE
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    DigiKey () EGA2000-940-N-(500-PCS-REEL-PACKING) Cut Tape 241 1
    • 1 $15.44
    • 10 $12.10
    • 100 $10.23
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    EGA2000-940-N-(500-PCS-REEL-PACKING) Digi-Reel 241 1
    • 1 $15.44
    • 10 $12.10
    • 100 $10.23
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    EGA2000-940-N-(500-PCS-REEL-PACKING) Reel 500
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    Littelfuse Inc IXTH40N50L2

    MOSFET N-CH 500V 40A TO247
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    DigiKey IXTH40N50L2 Tube 150 1
    • 1 $32.15
    • 10 $32.15
    • 100 $21.06
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    Newark IXTH40N50L2 Bulk 300
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    Littelfuse Inc IXTQ40N50L2

    MOSFET N-CH 500V 40A TO3P
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    DigiKey IXTQ40N50L2 Tube 129 1
    • 1 $18.71
    • 10 $18.71
    • 100 $11.59
    • 1000 $10.98
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    Newark IXTQ40N50L2 Bulk 300
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    • 1000 $11.51
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    onsemi FQL40N50

    MOSFET N-CH 500V 40A TO264-3
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    DigiKey FQL40N50 Tube
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    Newark FQL40N50 Bulk 1
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    40N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    40n50

    Contextual Info: Model 40N50TPP Flangeless Termination 40 Watts, 50Ω General Specifications Resistive Element Substrate Cover Lead s : Terminals Thick film Aluminum nitride ceramic Alumina Ceramic 99.9% pure silver (.006 thick) Thick film silver Electrical Specifications


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    40N50TPP MIL-E-5400. 40n50 PDF

    Contextual Info: IXTQ 40N50Q High Current Power MOSFET Q-Class VDSS = 500 V = 40 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    40N50Q 405B2 PDF

    40n50

    Abstract: 40N50Q
    Contextual Info: Advanced Technical Information IXFH 40N50Q IXFT 40N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 40 A ID25 RDS on = 0.14 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    40N50Q O-247 O-268 728B1 40n50 40N50Q PDF

    405B2

    Abstract: 40N50Q
    Contextual Info: IXTQ 40N50Q High Current Power MOSFET Q-Class VDSS = 500 V = 40 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    40N50Q 405B2 405B2 40N50Q PDF

    40N50Q

    Abstract: 40n50
    Contextual Info: Advanced Technical Information IXFH 40N50Q IXFT 40N50Q HiPerFETTM Power MOSFETs Q-Class VDSS = 500 V = 40 A ID25 RDS on = 0.14 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    40N50Q O-247 728B1 123B1 728B1 065B1 40N50Q 40n50 PDF

    Contextual Info: Advanced Technical Information VDSS = 500 V = 40 A ID25 RDS on = 0.14 Ω IXFH 40N50Q IXFT 40N50Q HiPerFETTM Power MOSFETs Q-Class trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    40N50Q O-247 O-268 728B1 PDF

    Contextual Info: IH 5352 ¡1 } H A R R I S S E M I C O N D U C T O R QUAD SPST CMOS RF/Video Switch GENERAL DESCRIPTION FEATURES The IH5352 is a QUAD SPST, CMOS monolithic video switch which uses a "Series/Shunt” “ T” switch configura­ tion to obtain high "OFF" isolation while maintaining good


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    100MHz 10MHz 80ns/150ns IH5352 IH5140 IH5352 N-225m PDF

    40n50

    Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
    Contextual Info: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75


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    50kHz 40n50 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF