MEGAMOS Search Results

10N90

Contextual Info: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient

weight TO-264

Contextual Info: Advance Technical Information IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100

IXTK80N25

Abstract: 80N25 megamos
Contextual Info: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

110N30

Contextual Info: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ

75N30

Contextual Info: Advance Technical Information IXTK 75N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 75 A Ω = 42 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 300

120N25

Abstract: SiEMENS EC 350 98 0
Contextual Info: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

IRFP

Contextual Info: IRFP 470 VDSS MegaMOSTMFET ID cont RDS(on) = 500 V = 24 A = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30

75N10

Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V

40N30

Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C

Contextual Info: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500

Contextual Info: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C

15N60

Abstract: IXTM15N60
Contextual Info: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r

21N100

Abstract: 21N10 ixtw DIXYS IXTN21N100
Contextual Info: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ

Contextual Info: VMO 450-02F MegaMOS FET Module N-Channel Enhancement Mode ps Maximum Ratings Symbol Conditions Voss VdgR T j = 25°C to 150°C 200 V T j = 25°C to 150°C; RGS = 10 k£i 200 V VGS C ontinuous ±20 V VgsM Transient ±30 V Id25 Tc = 25°C 450 A Id80 Tc = 80°C

VMO 580-02F

Abstract: zy180l
Contextual Info: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25

12n120

Contextual Info: Advance Technical Information MegaMOSTMFET VDSS = 1200 V ID cont = 12 A RDS(on)= 1.3 Ω IXTH 12N120 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous

10N100

Abstract: N100 12n100 TO204AA
Contextual Info: VDSS MegaMOSTMFET ID25 RDS on 1000 V 10 A 1.20 Ω 1000 V 12 A 1.05 Ω IXTH/IXTM 10 N100 IXTH/IXTM 12 N100 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V

Contextual Info: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V ID25 = 50 A Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient

Contextual Info: Advance Technical Information IXTK 160N20 High Current MegaMOSTMFET VDSS ID25 = 200 V = 160 A Ω = 13 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ

75N30

Contextual Info: Advance Technical Information IXTK 75N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 75 A Ω = 42 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Continuous ±20 V

Contextual Info: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V ID25 = 12 A RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient

nf 931 diode

Abstract: 400-02F C150 D-68623 megamos nf 931 vmo 400-02f
Contextual Info: MegaMOSTMFET Module VMO 400-02F VDSS ID25 RDS on = 200 V = 418 A Ω = 4.2 mΩ 1 N-Channel Enhancement Mode 11 10 Symbol Test Conditions 2 TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; R GS = 10 kΩ 200 V V GS Continuous ±20 V V GSM Transient ±30

Diode D25 N10 R

Abstract: 75N10 IXTH75N10
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 100 V IXTH/IXTM 75 N10 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V V GS

Contextual Info: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Continuous ±20