IXTM15N60 Search Results

IXTM15N60 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTM15N60	IXYS	MegaMOS Power MOSFETs	Scan	PDF	716.65KB	8
IXTM15N60	IXYS	MegaMOS FET	Scan	PDF	314.55KB	4
IXTM15N60	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	77.08KB	1

IXTM15N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
15N60 Abstract: IXTM15N60 Contextual Info: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r	OCR Scan	4bflb22b D00034Ö IXTH15N60, IXTM15N60, IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 50-600V, O-247 15N60	PDF
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95	PDF
15n60 Abstract: f sss 20n60 15N60A IXTM15N60 IXTH15N60 20n60 5196 IXTH20n60 to-247 D-68623 IXTH20N60 Contextual Info: v M e g a M O S p DSS 600 V 600 V F E T *D25 DS on 15 A 0.50 Q 20 A 0.35 Q N-Channel Enhancement Mode Symbol TestConditions VDSS Tj = 25 °C to 150°C 600 V v DGR Tj = 25 °C to 150°C; RGS= 1 MQ 600 V V6S VGSM Continuous +20 V Transient ±30 V ^D25 Tc = 25 °C	OCR Scan	O-247 15N60 20N60 O-204 O-247 100ms f sss 20n60 15N60A IXTM15N60 IXTH15N60 5196 IXTH20n60 to-247 D-68623 IXTH20N60	PDF

Catalog Datasheet

Type

Document Tags

PDF

15N60

Abstract: IXTM15N60
Contextual Info: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r

OCR Scan

4bflb22b D00034Ö IXTH15N60, IXTM15N60, IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 50-600V, O-247 15N60

PDF

megamos

Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4

OCR Scan

O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95

PDF

15n60

Abstract: f sss 20n60 15N60A IXTM15N60 IXTH15N60 20n60 5196 IXTH20n60 to-247 D-68623 IXTH20N60
Contextual Info: v M e g a M O S p DSS 600 V 600 V F E T *D25 DS on 15 A 0.50 Q 20 A 0.35 Q N-Channel Enhancement Mode Symbol TestConditions VDSS Tj = 25 °C to 150°C 600 V v DGR Tj = 25 °C to 150°C; RGS= 1 MQ 600 V V6S VGSM Continuous +20 V Transient ±30 V ^D25 Tc = 25 °C

OCR Scan

O-247 15N60 20N60 O-204 O-247 100ms f sss 20n60 15N60A IXTM15N60 IXTH15N60 5196 IXTH20n60 to-247 D-68623 IXTH20N60

PDF