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TE Connectivity 15721N100 Electromechanical Relay 6VAC 6Ohm 10A SPDT (38.89x35.71x55.55)mm Socket Industrial Relay
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	15721N100		36			1 $32.45 10 $32.45 100 $29.86 1000 $29.86 10000 $29.86	Buy Now
Hammond Manufacturing 1421N100 Hardware - (100) 10-32 black clip nuts for punched (round) hole panel rails
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Master Electronics	1421N100		12			1 $69.42 10 $57.40 100 $53.56 1000 $53.43 10000 $53.43	Buy Now
RS	1421N100	Package			1	1 $68.78 10 $68.78 100 $68.78 1000 $68.78 10000 $68.78	Get Quote
Powell Electronics	1421N100		116		1	1 $68.67 10 $56.72 100 $55.66 1000 $55.66 10000 $55.66	Buy Now
Neutron USA	1421N100		50			1 $207.58 10 $207.58 100 $207.58 1000 $207.58 10000 $207.58	Buy Now
OMRON Industrial Automation E32C21N10M M3 Angled Coaxial Diffuse 10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	E32C21N10M					1 $343.00 10 $343.00 100 $343.00 1000 $343.00 10000 $343.00	Buy Now
OMRON Industrial Automation E32D21N10M M4 Angled Coaxial Diffuse 10M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	E32D21N10M					1 $368.00 10 $368.00 100 $368.00 1000 $368.00 10000 $368.00	Buy Now
TE Connectivity TRD21N10WL Switch Rocker ON None ON DPDT Wire Lug Curved Rocker 20VAC 20VDC 0.4VA MOQ Reduction
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	TRD21N10WL					1 - 10 - 100 - 1000 $22.03 10000 $22.03	Buy Now
Avnet Americas	TRD21N10WL	Bag		19 Weeks	1,000	1 - 10 - 100 - 1000 $24.84 10000 $21.21	Buy Now
Sager	TRD21N10WL				25	1 - 10 - 100 $30.42 1000 $30.42 10000 $30.42	Buy Now
TME	TRD21N10WL				5	1 - 10 $25.42 100 $25.42 1000 $25.42 10000 $25.42	Get Quote

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21N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXFX 21N100F IXFK 21N100F HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr PLUS 247TM (IXFX)	Original	21n100f 247tm 728b1	PDF
21N100 Abstract: 21N10 ixtw DIXYS IXTN21N100 Contextual Info: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ	OCR Scan	21n100 o-264 cto150 ot-227 +421n10 ixtw dixys ixtn21n100	PDF
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol	Original	21n100q 247tm o-264	PDF
Contextual Info: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings	Original	21n100q 247tm 125oc 728b1	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 21N100Q Electrically Isolated Back Surface VDSS = 1000 V ID25 = 19 A RDS(on) = 0.50 W trr £ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions	Original	isoplus247tm 21n100q	PDF
Contextual Info: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM Electrically Isolated Back Surface Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V	Original	21n100q isoplus247tm 125oc 728b1	PDF
125OC Contextual Info: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM Electrically Isolated Back Surface Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 IDM IAR Maximum Ratings 1000 1000 V V ±20 ±30 V V	Original	21n100q isoplus247tm 125oc 728b1	PDF
21N10 Abstract: 21N100Q 125OC Contextual Info: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings	Original	21n100q 247tm 125oc 728b1 +121n10	PDF
21N100Q Contextual Info: Advanced Technical Information HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol	Original	o-264 21n100q 247tm	PDF
Contextual Info: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V ID25 = 21 A RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings	Original	21n100q ot-227 e153432 125oc +1728b1	PDF
21N100 Abstract: IXTN 85 N 20 21N10 IXTN21N100 Contextual Info: IXTK 21N100 IXTN 21N100 High Voltage MegaMOSTMFETs VDSS = 1000 V = 21 A ID25 RDS on = 0.55 Ω N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25°C to 150°C 1000 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	21n100 o-264 ixtn 85 n 20 21n10 +1ixtn21n100	PDF
Contextual Info: IXFR 21N100Q HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS ID25 = 1000 V = 18 A = 0.50 Ω RDS on (Electrically Isolated Back Surface) trr ≤ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions	Original	21n100q isoplus247tm	PDF
125OC Abstract: ixfn21n100q Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFN 21N100Q Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings	Original	21n100q ot-227 e153432 125oc +1ixfn21n100q	PDF
Contextual Info: HiPerFET TM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions Maximum Ratings	Original	o-264 21n100q 247tm 125oc +1728b1	PDF

21N100Q Abstract: 21N100 21N10 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 21N100Q Electrically Isolated Back Surface VDSS ID25 RDS(on) = 1000 V = 19 A = 0.50 W trr £ 250 ns N-Channel Enhancement Mode, Low Qg, High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions	Original	isoplus247tm 21n100q 21n100 21n10	PDF
21N100Q Abstract: 125OC Contextual Info: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die VDSS = 1000 V = 21 A ID25 RDS on = 0.50 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings	Original	21n100q ot-227 e153432 125oc +1728b1	PDF
21N10 Contextual Info: IXFN 21N100Q HiPerFETTM Power MOSFETs Q-Class Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt miniBLOC, SOT-227 B IXFN E153432 Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	21n100q ot-227 e153432 vot-227 +121n10	PDF
21N100Q Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V ID25 = 21 A RDS on = 0.50 W Single MOSFET Die trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/ dt, Low trr PLUS 247TM (IXFX)	Original	21n100q 247tm o-264	PDF
21N100Q Abstract: 21N100 125OC Contextual Info: HiPerFETTM Power MOSFETs IXFK 21N100Q IXFX 21N100Q Q-CLASS VDSS = 1000 V 21 A ID25 = RDS on = 0.50 Ω Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr PLUS 247TM (IXFX) Symbol Test Conditions VDSS VDGR	Original	21n100q 247tm 125oc 728b1 +121n100	PDF
21N10 Abstract: SPB21N10 Contextual Info: 21N10 21N10,21N10 Target data sheet SIPMOS =Power-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode •=175°C operating temperature • Avalanche rated P-TO262-3-1 100 V RDS on 85 mΩ ID 21 A P-TO263-3-2 P-TO220-3-1 • dv/dt rated	Original	spi21n10 spp21n10 spb21n10 p-to262-3-1 +3p-to263-3-2 p-to220-3-1 21n10	PDF
DIODE B44 sot Abstract: IXTK21 B44 diode IXTN21N100 Contextual Info: IXTK21 N100 21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V	OCR Scan	ixtk21 ixtn21n100 o-264 21n100 +2diode b44 sot b44 diode	PDF
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	isoplus247tm plus247tm-package fbo16-08n fbe22-06n1 +1421-05qc 22-08n 75-01f 21-08i01 transistor 12n60c 12n60c equivalent 30n120d1 13n50 equivalent 12n60c mosfet 1200v 30a mosfet 1000v 30a 30n120d cs20-22mof1 12n60c mosfet	PDF
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	isoplus220tm us247tm 247tm isoplus22rm +15isoplus227tm ixfe180n10 ixfe73n30q ixfe48n50q ixfe48n50qd2 12n60c equivalent 13n50 equivalent equivalent of igbt 12n60c motor ig 2200 19 ixlf 19n250a 24n60cd1 19n250 32n50 004ii 27n80q	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76n07-11 76n07-12 67n10 75n10 +1442n20 50n20 58n20 o-247 o-204 75n1 6n80 ixtm20n60 irfp 260 m ixfh k 15n60 ixtn 44n50 ks 4400 204 3b	PDF

21N10 Search Results

21N10 Price and Stock

TE Connectivity 15721N100

Hammond Manufacturing 1421N100

OMRON Industrial Automation E32C21N10M

OMRON Industrial Automation E32D21N10M

TE Connectivity TRD21N10WL

21N10 Datasheets Context Search

21N100

125OC

21N10

21N100Q

21N100

125OC

21N100Q

21N100Q

21N10

21N100Q

21N100Q

21N10

DIODE B44 sot

transistor 12n60c

12N60c equivalent

75N1