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    6N80 Search Results

    6N80 Datasheets (1)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    6N80
    Unknown N-Channel Enhancement Mode Original PDF 89.42KB 4
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    6N80 Price and Stock

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    onsemi FQP6N80C

    Transistor: N-MOSFET; unipolar; 800V; 3.2A; 158W; TO220AB
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    TME FQP6N80C 87 1
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    Mouser Electronics FQP6N80C 53
    • 1 $3.64
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    Newark FQP6N80C Bulk 200
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    Avnet Asia FQP6N80C 24 Weeks 1,000
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    Avnet Silica FQP6N80C 150 14 Weeks 50
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    EBV Elektronik FQP6N80C 850 15 Weeks 50
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    Master Electronics FQP6N80C
    • 1 $1.96
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    Viking Technology AL02BT6N802

    Inductor: thin film; SMD; 0402; 6.8nH; 290mA; R: 900mΩ; ±0,1nH
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    TME AL02BT6N802 1,000
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    IXYS Corporation IXFT16N80P

    Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
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    TME IXFT16N80P 1
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    TTI IXFT16N80P Tube 300
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    onsemi FQPF6N80CT

    Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 22A; 51W; TO220FP
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    TME FQPF6N80CT 1
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    Rochester Electronics FQPF6N80CT 1,100 1
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    Vishay Intertechnologies SIHA6N80E-GE3

    Transistor: N-MOSFET; unipolar; 800V; 5.4A; 31W; TO220FP
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    TME SIHA6N80E-GE3 1,000
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    TTI SIHA6N80E-GE3 Reel 1,000
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    EBV Elektronik SIHA6N80E-GE3 39 Weeks 50
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    6N80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6N80

    Contextual Info: Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A VDSS ID25 RDS on 800 V 800 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS


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    6n80ao-204o-2476n80 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary 6.0 Amps, 800 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 6N80 is a N-channel mode Power FET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original
    o-220o-220fo-220f1qw-r502-500 PDF

    6n80

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N80 Preliminary 6A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 6N80 is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specialized in allowing a


    Original
    o-220o-220fo-220f1qw-r502-500+16n80 PDF

    Contextual Info: DIXYS Standard Power MOSFET ix t h / ix tm 6N8O IX TH /IXTM 6N80A p v DSS ^D25 DS on 800 V 800 V 6A 6A 1.8 CÌ 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS Tj =25°C to150°C 800 V VD0H T j = 25°C to 150°C; RGS= 1 Mi2 800


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    6n80ato150o-247o-204+2c2-56ixtm4n80a PDF

    6n80

    Abstract: 6n80a
    Contextual Info: Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A VDSS ID25 RDS on 800 V 800 V 6A 6A 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS


    Original
    6n80ao-204o-2476n80 PDF

    Contextual Info: 6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A SuperMESH 5 Power MOSFET in a TO-220FP package Datasheet − preliminary data Features Order codes VDS RDS on max ID PTOT 6N80K5 800 V 1.6 Ω 4.5 A 25 W • TO-220 worldwide best RDS(on) • Worldwide best FOM (figure of merit)


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    stf6n80k5o-220fpo-220docid024664 PDF

    6N80

    Abstract: 6N80A JM24A JM-24 N80A JM-24A
    Contextual Info: VDSS Standard Power MOSFET IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V ID25 6A 6A RDS on 1.8 Ω 1.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS


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    o-204o-2476n80ao-204aa+56n80jm24ajm-24n80ajm-24a PDF

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


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    76n07-1176n07-1267n1075n10+1442n2050n2058n20o-247o-20475n16n80ixtm20n60irfp 260 mixfhk 15n60ixtn 44n50ks 4400204 3b PDF

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    5-10a52-14n0152-16n0155-12n+1655-14n0755-18n60-08n60-16n62-08n62-12n40n8013nb060n60dsei 20-1233n120vuo 35-12 n 0 7ds117-12ads117-1226n604410pi PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


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    buz10buz11buz11abuz11s2+16buz15buz171buz20buz21buz23buz31mtm13n50ep40n1024n40p50n058n50epower mosfet cross reference guidemotorola 20n50etp50n05eirf510 mosfet irf64033n10e PDF

    Contextual Info: mm T % r XYS Standard Power MOSFET v DSS IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80> 800 V p ^D25 DS on 6A 6A 1.8 ß 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 800 V v DGR Maximum Ratings T.J = 25°C to 150°C;* RGS„ = 1 MSi


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    o-247o-204ixth6n80aixtm6n80a PDF

    Contextual Info: 6N80K5, 6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A SuperMESH 5 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet − production data Features Order codes VDS RDS on max ID PTOT 800 V 1.6 Ω 4.5 A 25 W 6N80K5 6N80K5 • Worldwide best FOM (figure of merit)


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    stf6n80k5stfi6n80k5o-220fpdocid024664 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    axc-051axc-053axc-101axc-102+16axl-001axl-051axv-102142-12io8142-16io819-08ho17n60b35n120u1ixys dsei 45-12adsdi 35-12a20n8080n0680n60vvy 40-16io1ixys cs 2-12ixfx 44n80 PDF

    IXTN 36N50 C

    Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
    Contextual Info: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20


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    o-247o-220o-263o-264+1667n1075n1050n2079n2035n3040n30ixtn 36n50 cixys ixth 21n50mosfet irfp 250 nc226c278c210013n110c258irfpixys ixtn 36n50 PDF

    4835 mosfet

    Abstract: 6n80a
    Contextual Info: VDSS Standard Power MOSFET D ^025 IXTH/IXTM 6 N80 800 V IXTH/IXTM 6 N80A 800 V DS on 6A 6A 1.8 Q 1.4 Q N-Channel Enhancement Mode Symbol Test Conditions V * OSS T j = 25°C to 150°C 800 V Tj = 25°C to 150°C; RGS = 1 MQ 800 V Vos Continuous ±20 V VGSM


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    o-247o-204c2-624835 mosfet+16n80a PDF

    IRF 850 mosfet

    Abstract: MOSFET IRF 635 MOSFET IRF 630 MOSFET IRF 713 IRF N-Channel Power MOSFETs IRF 740 N IRF 840 MOSFET IRF 450 MOSFET P Channel Power MOSFET IRF irf 540 mosfet
    Contextual Info: FUNCTION GUIDE POWER MOSFETs N-CHANNEL MOSFET TO-220 Vos Id 50 60 80 100 120 150 180 200 2 2.5 350 IRF IRF 713 712 IRF IRF IRF 711 710 1.3 1.5 250 400 450 500 550 600 700 800 850 900 IRF IRF IRF IRF IRF SS P SSP 613 612 614 823 822 2N85 2N90 IRF IRF IRF IRF


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    o-220ir9523irf9522irf9513+16irf9511irf9512irf9510irf9623irf9621irf9622irf 850 mosfetmosfet irf 635mosfet irf 630mosfet irf 713irf n-channel power mosfetsirf 740 nirf 840 mosfetirf 450 mosfetp channel power mosfet irfirf 540 mosfet PDF

    STP6N80

    Contextual Info: 6N80K5, 6N80K5, 6N80K5, 6N80K5 N-channel 800 V, 1.3 Ω typ., 4.5 A SuperMESH 5 Power MOSFET in D2PAK, DPAK, I2PAK and TO-220 packages Datasheet − preliminary data TAB Features TAB Order codes 3 1 3 1 6N80K5 6N80K5 TAB TAB RDS on max


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    stb6n80k5std6n80k5sti6n80k5stp6n80k5+2o-220stp6n80 PDF

    IRFP 640

    Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
    Contextual Info: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140


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    135xtp01n1001n1002n100+13100x201n100x3o-251o-220abirfp 640irfp 260 m6n80a0 280 130 023irfp24n505n10ixtm20n606n90a PDF

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


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    o-247o-251o-204o-264+1615n6020n6015n7001n8035n3040n3011n80ixys ixth 21n50c2100g2642n100ixth75n1074n20c2104c29413n80 PDF

    21N50

    Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
    Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200


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    12n50a21n5024n5015n60+1220n606n80a11n8013n806n90a10n906n80mosfet 11n80page-42k 15n60ixtm21n50ixth7p50 PDF

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


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    67n1075n1042n2050n20+1568n2035n3040n3030n4512n50a21n506n80ixtn 36n50 c40n16040n140ixtn 79n20irfp 240ixtk33n50ixtn21n100irfp PDF

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


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    dsai35-12a5-16a5-18a5-12a+142-06a12-1oa2-12a2x30-q4cmm036ml075-12mm036-12mm036-16mm075-12io1mm062dsi 12-06amdd95-16n1bme0321n100 PDF

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Contextual Info: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


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    o-247o-220o-263o-264+1667n1075n1050n20c2-10c2-18c2-20mosfet 11n80 data sheetmosfet 11n806n80ixtn 36n50 c11n80ixys ixtn 79n20ixys ixtn 36n506n9012n100irfp 640 PDF

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


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    11pm104thyristor tag 8506nais inverter vf 7f operation manual922aa1y-a4p+7optek a400 817sprague 513dsprague 926csprague 195prapa relay 12vdctriac tag 8948mascot 719 PDF