35N30 Search Results

IXTH35N30

Contextual Info: n ix Y S v DSS ^D25 300 V 300 V 300 V 35 A 40 A 40 A MegaMOS FET IXTH 35N30 IXTH 40N30 IXTM 40N30 p DS on 0.10 £1 0.085 Q, 0.088 £2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T j =25°C to150°C 300 V v DG„ Tj = 25° C to 150° C; RGS= 1 Mi2

75N1

Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH

40N30L

Abstract: ixfm40n30
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFM 35 N30L IXFM 40 N30L 300 V 300 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous ±20 V VGSM Transient ±30 V I D25 TC = 25°C 35N30 40N30 35 40 A

1Bt smd

Abstract: smd 1bt A1t smd smd diode A1T smd 1bt diode 35N30 40N30 IXFH40N30 diode D83 004 D-68623
Contextual Info: □IXYS IXFH 35N30 IXFH 40N30 ^DSS 300 V 300 V 300 V •TM HiPerFET Power MOSFETs IXFH/FM 35N30 IXFH 40N30 IXFM 40N30 IXFM 35N30 IXFM 40N30 ^D25 35 A 40 A 40 A D DS on trr 100m Q. 200 ns 85m Q. 200 ns 88m Q. 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS Family

IXFH40N30

Abstract: international rectifier igbt to-247 package
Contextual Info: v DSS HiPerFET Power MOSFETs ix f h / ix f m 35N30 IXFH40N30 IXFM40N30 N-Channel Enhancement Mode High dv/dt, Low t , HDMOS™ Family Symbol v' dss = 25°C to 150°C 300 V 300 V V VGS Continuous ±20 Vc*« Transient ±30 V u Tc = 25°C 35N30 40N30 35 40

IXTH35N30

Abstract: IXTH40N30 IXTM40N30
Contextual Info: MegaMOSTMFET IXTH 35N30 IXTH 40N30 IXTM 40N30 VDSS ID25 RDS on 300 V 300 V 300 V 35 A 40 A 40 A 0.10 Ω 0.085 Ω 0.088 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

IXTH40N30

Abstract: D2528 N30300
Contextual Info: T X /Y " ’ v MegaMOS FET IXTH/IXTM 35 N30 300 V IXTH 40 N30 300 V IXTM 40 N30 300 V N-Channel Enhancement Mode Symbol Test Conditions VDSS Tj = 25 °C to 150°C 300 V VDGR Tj = 25 °C to 150°C; RGS = 1 M il 300 V Maximum Ratings ' > V ±30 V ^D25 Tc 35N30

40N30

Abstract: 35n30 FM40N30 IXFH40N30
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 300 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous

40N30

Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA
Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C

mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

IXTH40N30

Abstract: 40N30 D-68623 IXTM40N30 35N30 IXTM35N30
Contextual Info: VDSS IXTH/IXTM 35 N30 300 V IXTH 40 N30 300 V IXTM 40 N30 300 V MegaMOSTMFET N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V V GS Continuous ±20 V VGSM Transient

35N25

Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Contextual Info: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs 35N30, 25 35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM 35 N30 IXFH 40 N30 IXFM 40 N30 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 300 V VGS Continuous

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXTN 36N50 C

Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Contextual Info: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20

IRFP 260 M

Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH

IXfk 75 N 50

Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400

FH40N30

Abstract: IXFH40N30 40N30 D-68623 IXFH35N30 IXFM35N30 IXFM40N30 IXYS Corporation FM40N30 IXFH40N30S
Contextual Info: 35N30 35N30 VDSS HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/35N30 300 V IXFH40N30 300 V IXFM40N30 300 V IXFH40N30 IXFM40N30 ID25 RDS on trr 35 A 40 A 40 A 100mΩ 85mΩ 88mΩ 200 ns 200 ns 200 ns

ID 48 Megamos

Abstract: 35N25 IXTM35N25 ixtm35n30
Contextual Info: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs 35N30, 25 35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous

11n80

Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088