12N50A Search Results

21N50

Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200

n50a

Abstract: 12N50A 12n50 IXYS CORPORATION TO-204AA ups 017 IXTH max 3540 D-68623 IXTM12N50A
Contextual Info: Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS on 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous

75N1

Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

12N50A

Abstract: N50A NC4050
Contextual Info: Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS on 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous

Contextual Info: -*r -jr r'“'* Y S X w X v Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A * DSS ^D25 500 V 500 V 12 A 12 A p DS on a 0.4 Q 0.4 N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj V DGR Maximum Ratings = 25°C to 150°C 500 V T j = 25°C to 150°C; RgS = 1 M il

IRFP 260 M

Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH

11n80

Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

6N80

Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68

mm036

Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA

IXTH15N45A

Contextual Info: 4686226 I X Y S 03 CORP d F | 4 1. f l t=,2 2 1> D D O O E I S 2 |~~ / 3 / " □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V

Power MOSFET TT 2146

Abstract: mosfet TT 2146 n50A os TT 2222
Contextual Info: XYS Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A ^DSS ! ^D25 500 V 12 A 500 V I 12 A P DS on 0.4 i l 0.4 i l N-Channel Enhancement Mode Symbol Test Conditions VDSS T j = 25°C to 150°C 500 Tj = 25°C to 150°C; Res = 1 Mi2 500 V Maximum Ratings V Vgs

IRFP450 inverter

Abstract: IXTH12N50A IXTH15N45A 2N6769 2N6770 IRFC450 IXTH12N50 ITXH12N45
Contextual Info: 4686226 I X Y S CORP 03 D e | 4 fl t. E S t. DOODEIS 5 / 7 □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V 0.4Q RDS(on) .