42N20 Search Results

75N1

Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH

42n20

Abstract: ixys ml 075 50N20 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083
Contextual Info: □IXYS IXFH 42N20 IXFM 42N20 HiPerFET Power MOSFETs IXFH 50N20 IXFM 50N20 IXFH/FM 42N20 IXFH/FM 50N20 IXFH 58N20 IXFH 58N20 V DSS ^D25 D DS on 200 V 200 V 200 V 42 A 50 A 58 A 60 mQ 45 m£2 40 mQ 200 ns 200 ns 200 ns N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family

11n80

Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088

RAS 0510 SUN HOLD

Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.

Contextual Info: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V ID25 = 50 A Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient

1534F

Abstract: 50n20
Contextual Info: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous

mosfet 4400

Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Contextual Info: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,

Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions

CRT - TCL COLOUR TV SCHEMATIC DIAGRAM

Abstract: MATSUA compressor catalogue Riyadh Cables Catalogue PD 18N50 equivalent MATSUSHITA compressor catalogue CRT TCL COLOUR TV SCHEMATIC DIAGRAM Anritsu ML524B operation manual ML2430 CRT - tcl 29" COLOUR TV SCHEMATIC DIAGRAM Anritsu MG442A
Contextual Info: CONTENTS Outline of Anritsu Corporation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 How to Use This Catalog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Sales, Shipping, and Service Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

SMD diode N20

Abstract: IXFH58N20 30n20
Contextual Info: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

IXFM50N20

Abstract: 50N20 IXFH50N20 IXFH58N20 42N20 58N20 IXFH42N20 IXFM42N20 58AA
Contextual Info: HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 VDSS ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

50n20

Abstract: IXFM50N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions

42N15

Abstract: 079A 42N20
Contextual Info: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs 42N20, 15 42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

IRFP 260 M

Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH

IXfk 75 N 50

Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400

50N20

Abstract: 42N20 IXTH42N20
Contextual Info: J □ IXYS MegaMOS FET IXTH/42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200

IXFM42N20

Abstract: IXFM50N20 IXFT58N20 50N20 transistor ixfh application note TO-204 footprint ixfh 26 n 49 42N20 58N20
Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions

upc 1185 h

Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
Contextual Info: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

6N80

Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68