60N25 Search Results

60N25

Abstract: D2560 UPS SIEMENS
Contextual Info: Advance Technical Information IXTH 60N25 Standard Power MOSFET VDSS = 250 V ID cont = 60 A Ω RDS(on) = 46 mΩ N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250

60N25

Abstract: UPS SIEMENS IXTT60N25 d2560
Contextual Info: Advance Technical Information VDSS = 250 V ID cont = 60 A Ω RDS(on) = 46 mΩ IXTH 60N25 IXTT 60N25 Standard Power MOSFET N-Channel Enhancement Mode Symbol Test conditions VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS

60N25

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs VDSS ID25 IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q Q-Class = 250 V = 60 A = 47 mW £ 250 ns RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol

60N25

Abstract: MAX2235
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q Q-Class VDSS ID25 = 250 V = 60 A = 47 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol

Contextual Info: Advance Technical Information IXTH 60N25 Standard Power MOSFET VDSS = 250 V ID cont = 60 A Ω RDS(on) = 46 mΩ N-Channel Enhancement Mode Symbol Test conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum ratings 250 250 V Continuous

60N25

Abstract: 98630
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class = 250 V = 60 A Ω = 47 mΩ ≤ 250 ns VDSS ID25 IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q RDS on t rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances

Contextual Info: 60N25A9 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current600m @Temp (øC) (Test Condition)25 V(RRM)(V) Rep.Pk.Rev. Voltage2.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.40 V(FM) Max.(V) Forward Voltage3.0 @I(FM) (A) (Test Condition)600m @Temp. (øC) (Test Condition)25

60N25

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q Q-Class VDSS ID25 = 250 V = 60 A = 47 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol

Contextual Info: □ IXYS Advanced Technical Information IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q HiPerFET Power MOSFETs Q-Class V.DSS D25 R DS on t rr = 250 V = 60 A = 47 mQ < 250 ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr Low Gate Charge and Capacitances

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

40N25

Abstract: 100N45 60N652 0101T photron
Contextual Info: CHIP SIZE mil wafer form chip form IR@VR (mA@V) 7,081 40x40 38.8+/-0.5 ≦0.2@23 ≦0.44@1 S40CT1 40N451 7,081 40x40 38.8+/-0.5 ≦0.2@43 ≦0.50@1 S40CT1 40N651 7,081 40x40 38.8+/-0.5 ≦0.2@63 ≦0.65@1 S40CT1 50N251 4,450 50x50 48.8+-/0.5 ≦0.2@23 ≦0.42@1

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)