80N06 Search Results

Contextual Info: SGS-THOMSON [MOigœilLiera *® 80N06-10 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss R dS oii Id STW 80N06-1 0 60 V < 0 .010 a. 80 A • . . . . . . . TYPICAL RDS(on) = 0.0085 £1 AVALANCHE RUGGED TECHNOLOGY

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

80n06

Abstract: 80N06-10 STW80N06-10
Contextual Info: 80N06-10  N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STW 80N06-10 60 V < 0.010 Ω 80 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

transistor d 1557

Abstract: sc06140 TO-247 sc06140
Contextual Info: SGS-THOMSON M TO »« S TW 8 0 N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA . • . . . . . . TYP E V dss RDS on Id STW 80N06-1 0 60 V < 0.010 Î2 80 A a TYPICAL R d s(oh ) = 0.0085 AVALANCHE RUGGED TECHNOLOGY

80n06

Abstract: 9856-2 max3049
Contextual Info: AdvancedTechnical Information ixfh 80N06 IXFT 80N06 HiPerFET Power MOSFETs •d* = 60 V = 80 A ^DS on - VDSS m fl trr < 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions V Tj = 25° C to 150° C Tj = 25° C to 150° C; RQS= 1 Mi2

80n06

Contextual Info: IXFH 80N06 IXFT 80N06 HiPerFETTM Power MOSFETs VDSS ID25 = 60 V = 80 A = 6.5 mW RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

80N06

Contextual Info: IXFH 80N06 IXFT 80N06 HiPerFETTM Power MOSFETs VDSS ID25 = 60 V = 80 A = 6.5 mW RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 60 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

toy helicopter remote control circuit diagram

Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
Contextual Info: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

optimos battery protection reverse

Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
Contextual Info: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the

TLE7201

Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
Contextual Info: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by

BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06

80n06

Abstract: NP80N06MLG-s18 MP-25ZP NP80N06MLG NP80N06MLG-S18-AY NP80N06NLG NP80N06NLG-S18-AY NP80N06PLG NP80N06PLG-E1B-AY NP80N06PLG-E2B-AY
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268

80N06

Abstract: NP80N06MLG MARKING E2B NP80N06PLG NP80N06NLG MP-25ZP NP80N06MLG-S18-AY NP80N06NLG-S18-AY NP80N06PLG-E1B-AY NP80N06PLG-E2B-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 80N06MLG, 80N06NLG, 80N06PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 80N06MLG, 80N06NLG, and 80N06PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.