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    50N03 Search Results

    50N03 Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    50N035
    		Bay Linear N-Channel Field Effect Transistor Original PDF 33.6KB 2
    50N035S
    		Bay Linear 30V 52A N-channel field effect transistor Original PDF 33.6KB 2
    50N035T
    		Bay Linear 30V 52A N-channel field effect transistor Original PDF 33.6KB 2
    badge MDD50N03D
    		Microdiode Semiconductor (MDD) Power Field-Effect Transistor Original PDF
    SF Impression Pixel

    50N03 Price and Stock

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    onsemi FDD050N03B

    N-Channel PowerTrench? MOSFET 30V, 90A, 5.0mO - Tape and Reel (Alt: FDD050N03B)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FDD050N03B Tape & Reel 2,500
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    Bristol Electronics FDD050N03B 2,500 1
    • 1 $0.75
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    • 100 $0.28
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    Flip Electronics FDD050N03B 9,670
    • 1 $0.23
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    Infineon Technologies AG IPD50N03S2L06ATMA1

    Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: IPD50N03S2L06ATMA1)
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    Avnet Americas IPD50N03S2L06ATMA1 Tape & Reel 25 Weeks, 4 Days 2,500
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    Rochester Electronics IPD50N03S2L06ATMA1 26,783 1
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    Infineon Technologies AG BSO150N03MDGXUMA1

    Transistor MOSFET Array Dual N-CH 30V 9.3A 8-Pin DSO T/R - Tape and Reel (Alt: BSO150N03MDGXUMA1)
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    Avnet Americas BSO150N03MDGXUMA1 Tape & Reel 2,500
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    Newark () BSO150N03MDGXUMA1 Tape & Reel 512 100
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    BSO150N03MDGXUMA1 Cut Tape 512 1
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    TME BSO150N03MDGXUMA1 1
    • 1 $1.31
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    EBV Elektronik BSO150N03MDGXUMA1 14 Weeks 2,500
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    Win Source Electronics BSO150N03MDGXUMA1 34,290
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    Infineon Technologies AG IPD050N03LGATMA1

    - Tape and Reel (Alt: IPD050N03LGATMA1)
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    Avnet Americas IPD050N03LGATMA1 Tape & Reel 8 Weeks 2,500
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    Newark () IPD050N03LGATMA1 Cut Tape 5,534 1
    • 1 $1.60
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    IPD050N03LGATMA1 Tape & Reel 5,534 100
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    Rochester Electronics IPD050N03LGATMA1 4,016 1
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    TME IPD050N03LGATMA1 930 1
    • 1 $1.52
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    EBV Elektronik IPD050N03LGATMA1 9 Weeks 2,500
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    Infineon Technologies AG BSZ050N03LSGATMA1

    Trans MOSFET N-CH 30V 16A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ050N03LSGATMA1)
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    Avnet Americas BSZ050N03LSGATMA1 Tape & Reel 52 Weeks 5,000
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    Newark BSZ050N03LSGATMA1 Bulk 13,526 1
    • 1 $1.32
    • 10 $0.83
    • 100 $0.54
    • 1000 $0.41
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    Rochester Electronics BSZ050N03LSGATMA1 108,391 1
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    TME BSZ050N03LSGATMA1 1
    • 1 $1.15
    • 10 $0.63
    • 100 $0.50
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    • 10000 $0.24
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    EBV Elektronik BSZ050N03LSGATMA1 53 Weeks 5,000
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    Win Source Electronics BSZ050N03LSGATMA1 94,830
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    Find more 50N03 price and stock on Findchips.com

    50N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    50N03

    Abstract: Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32
    Contextual Info: Bay Linear Linear Excellence 50N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications


    Original     		50n035o-22050n03diode bay 32+450n035tbay linear50n035s52a32 PDF

    ISS355

    Abstract: 50N03 22N3904 si4431 BAT 43 - 46 - 85 - 86 F1AJ3 TL494 2n3904 D50N03 23C56
    Contextual Info: R149 VCC CN5 ADAPT ER 1 3 5 7 9 11 13 15 17 19 21 23 25 220 ADAPT ER R127 1 2 Q34 32N3906 DD_ON VR_ON SYS_SCL SYS_SDA R129 10K ALERT 4.7K BAT _ON BAT FULL1 BAT CH_A I_ALARM 2 4 6 8 10 12 14 16 18 20 22 24 26 1 3 5 7 9 11 13 15 17 19 21 23 25 2 4 6 8 10 12


    Original     		con2632n3906lm3582n3904+1447uf/6max1701qsop-24470pf1uf/35viss35550n0322n3904si4431bat 43 - 46 - 85 - 86f1aj3tl494d50n0323c56 PDF

    50N03

    Contextual Info: 50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		ntd50n03rntd50n03r/d50n03 PDF

    50n03

    Abstract: 6030L 70N03 P transistor Comparison Tables 70N03
    Contextual Info: Optim ization of the Performance of Power Supply Circuits That Use Low Voltage, Low On-Resistance M O SFETs By F. luan Hshieh, Sydney So, Jeff Chuc Low Voltage, Low On-Resistance Trench MOSFET Design Abstract A typical discrete double-diffused MOSFET or DMOS tran­


    OCR Scan     		50n036030l70n03 ptransistor comparison tables+170n03 PDF

    50N03

    Contextual Info: 50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		ntd50n03rntd50n03r/d50n03 PDF

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Contextual Info: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		b192-h9213-x-x-7600toy helicopter remote control circuit diagramtda 2377nokia bts+7str z 4267rc helicopter circuit diagrampg-to252-5-11 footprintnokia 5230 hardwaretda 2525campus italia vol 1how to make rc helicopter PDF

    50N03

    Abstract: inverter 12v to 220 ac mosfet based
    Contextual Info: Final Electrical Specifications L ifm L T C 1530 TECHNOLOGY High P ow er Synchronous S w itching R egulator C ontro ller N o v e m b e r 1998 FCRTURCS D C S C R IP TIO n • High Power Buck Converter from 5V or 3.3V Main Power ■ Adjustable Current Limit in SO-8 with


    OCR Scan     		300khzltc1753ltc1553l50n03+1inverter 12v to 220 ac mosfet based PDF

    optimos battery protection reverse

    Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
    Contextual Info: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the


    Original     		fin-02601100p03p3l-04p-to220-3p-to262-3+14p-to252-3p-to263-3o-263-7p-to263-7p-to220-7optimos battery protection reverse80n03ssmd k 739 mosfet50n0380n06s2-0925n0650n03s2-07817 cnto-263-7 package PDF

    TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Contextual Info: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do


    Original     		b112-h6731-g12-x-7600tle7201bts426l2tle 6289+7xc 7270transistor smd k27bts7960btle6289gpbsp 452-tbts5241liso11519 PDF

    IRF4953

    Abstract: 50N03 IR*435 2n3904 h2 c F01J2E IRF4435 M339 2n3904-c49 IC la 4148 IRF44
    Contextual Info: Charger Board 1 of 5 CV_A CCO SK24 2 T EMP C2 10UF/50V 2220 1 1K R29 R34 10K D4 F01J2E R7 4.7K VC B 4 VC VCC Q3 2N3904 10K R1 1 2 D2 1,2,3 1 5,6,7,8 B Q8 2N3904 10K R33 R20 D5 F01J2E R2 470 B 2 VC 1N4148 D7 10K R30 BAT C8 0.1UF 4.7K 10K R8 Q1 IRF4435(SO-8)


    Original     		2uf/25vb114ekwin716ssop-30+131n41488p4r-10k47uf/650n03irf4953ir*4352n3904 h2 cf01j2eirf4435m3392n3904-c49ic la 4148irf44 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    bts 2106

    Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL
    Contextual Info: T E M P F E T , H I T F E T ®, P R O F E T ®, T R I L I T H I C ®, O p t i M O S Ultimate POWER needs PERFECT Control Smart Power Switches and Bridges www.infineon.com Never stop thinking. Improve your System and Replace the Relays with Infineon SMART POWER SWITCHES and


    Original     		b112-h6731-g8-x-7600bts 2106bts 425 l180n04+7bts 5155bts 2146tekelec tabts 3012bts 240-asiemens tle 420ca 5210 pl PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF

    50n03s2-07

    Abstract: 50N03 MOSFET having TO-252 PAckage APPS071E TO252-3 rthjc copper bond wire infineon SPP100N04S2L03 100n04s2l-03 50N06 50N03S2L-06
    Contextual Info: Application Note, V 1.0, June 2002 APPS071E  OptiMOS PowerBondä by Jean-Philippe Boeschlin Automotive Power Never stop -1- thinking. APPS071E OptiMOS  PowerBondä Powerbond II II Powerbond 1. Abstract Powerbond II Powerbond This Application Note introduces Infineon


    Original     		apps071e50n03s2-0750n03mosfet having to-252 package+6to252-3 rthjccopper bond wire infineonspp100n04s2l03100n04s2l-0350n0650n03s2l-06 PDF