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    50N03 Search Results

    50N03 Datasheets (16)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    50N035
    		Bay Linear N-Channel Field Effect Transistor Original PDF 33.6KB 2
    50N035S
    		Bay Linear 30V 52A N-channel field effect transistor Original PDF 33.6KB 2
    50N035T
    		Bay Linear 30V 52A N-channel field effect transistor Original PDF 33.6KB 2
    badge AK50N03K
    		AK Semiconductor AK50N03K N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 50A continuous drain current, RDS(ON) less than 8mΩ at VGS=10V, advanced trench technology for low on-resistance and high switching performance. Original PDF
    badge SKQ50N03BD
    		Shikues Semiconductor VDS 30V, ID 50A, RDS(ON) <6.0 mohm (VGS=10V), <8.0 mohm (VGS=4.5V), 100% UIS & ▽VDS Tested, Trench Power LV MOSFET, heat dissipation, low RDS(ON). Original PDF
    badge JMTK50N03A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 50A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 8.6 mΩ at VGS = 10V, advanced trench technology, low gate charge, and TO-252-3L package. Original PDF
    badge MDD50N03D
    		Microdiode Semiconductor 30V N-Channel Enhancement Mode MOSFET, MDD50N03D. Original PDF
    badge HKTG150N03
    		Shenzhen Heketai Electronics Co Ltd N-channel MOSFET HKTG150N03 in PDFN5x6 package with 30V drain-source voltage, 120A continuous drain current, and on-resistance of 3.4mΩ at 10V gate-source voltage. Original PDF
    badge HKTG50N03
    		Shenzhen Heketai Electronics Co Ltd N-channel MOSFET in PDFN5x6 package with 30 V drain-source voltage, 50 A continuous drain current at 25°C, low on-resistance of 6.2 mΩ at 10 V gate-source voltage, and fast switching characteristics. Original PDF
    badge CJAC150N03A
    		JCET Group 30V N-Channel Power MOSFET in PDFN 5x6-8L package with 150A continuous drain current, 1.4mΩ typical RDS(on) at 10V VGS, trench technology for low gate charge and ultra-low on-resistance. Original PDF
    badge HKTD50N03
    		Shenzhen Heketai Electronics Co Ltd N-channel Power MOSFET in TO-252 package with 30V drain-source voltage, 50A continuous drain current at 25°C, and on-resistance of 6.8mΩ typical at 10V gate-source voltage. Original PDF
    badge CJAC150N03
    		JCET Group CJAC150N03 N-channel Power MOSFET with 30V drain-source voltage, 150A continuous drain current, 1.6mΩ typical RDS(on) at 10V VGS, advanced trench technology for low gate charge and ultra-low on-resistance, suitable for high-frequency and power switching applications. Original PDF
    badge SLD150N03T
    		Maplesemi N-channel 30V 150A Power MOSFET with typical RDS(on) of 2.5 mΩ at VGS = 10V, low gate charge, fast switching, and 100% avalanche tested for high reliability in PWM and power management applications. Original PDF
    badge HSU150N03
    		Huashuo Semiconductor N-Ch 30V Fast Switching MOSFET with 150A continuous drain current, 2.4mΩ typical RDS(ON), low gate charge, and high cell density trench technology for synchronous buck converter applications. Original PDF
    badge SLM150N03T
    		Maplesemi 30V N-Channel MOSFET with 150A continuous drain current, 2.4mΩ typical RDS(on) at VGS = 10V, low gate charge, and fast switching for PWM and power management applications. Original PDF
    badge HKTQ50N03
    		Shenzhen Heketai Electronics Co Ltd N-channel MOSFET HKTQ50N03 in PDFN3333 package with 30 V drain-source voltage, 8.5 mΩ on-resistance at 10 V gate voltage, and 50 A continuous drain current. Original PDF
    SF Impression Pixel

    50N03 Price and Stock

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    Infineon Technologies AG BSC150N03LDGATMA1

    MOSFET 2N-CH 30V 8A 8TDSON
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    DigiKey BSC150N03LDGATMA1 Tape & Reel 25,000 5,000
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    Avnet Americas BSC150N03LDGATMA1 Tape & Reel 52 Weeks 5,000
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    Mouser Electronics BSC150N03LDGATMA1 11,109
    • 1 $0.49
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    Newark BSC150N03LDGATMA1 Bulk 3,601 1
    • 1 $0.50
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    Rochester Electronics BSC150N03LDGATMA1 5,063 1
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    TME BSC150N03LDGATMA1 1
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    Chip One Stop BSC150N03LDGATMA1 Cut Tape 4,080 0 Weeks, 1 Days 5
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    Chip Stock BSC150N03LDGATMA1 179,150
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    EBV Elektronik BSC150N03LDGATMA1 53 Weeks 5,000
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    Win Source Electronics BSC150N03LDGATMA1 166,650
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    Infineon Technologies AG IPD050N03LGATMA1

    MOSFET N-CH 30V 50A TO252-3
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    DigiKey () IPD050N03LGATMA1 Cut Tape 6,866 1
    • 1 $1.42
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    IPD050N03LGATMA1 Digi-Reel 6,866 1
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    IPD050N03LGATMA1 Tape & Reel 5,000 2,500
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    Avnet Americas IPD050N03LGATMA1 Tape & Reel 26 Weeks 2,500
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    Mouser Electronics IPD050N03LGATMA1 4,978
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    Newark IPD050N03LGATMA1 Cut Tape 5,831 1
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    Rochester Electronics IPD050N03LGATMA1 4,016 1
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    TME IPD050N03LGATMA1 1,601 1
    • 1 $1.30
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    Chip Stock IPD050N03LGATMA1 53,100
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    EBV Elektronik IPD050N03LGATMA1 27 Weeks 2,500
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    Win Source Electronics IPD050N03LGATMA1 49,600
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    • 100 $0.94
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    Infineon Technologies AG IPD50N03S2L06ATMA1

    MOSFET N-CH 30V 50A TO252-31
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () IPD50N03S2L06ATMA1 Cut Tape 4,532 1
    • 1 $2.38
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    IPD50N03S2L06ATMA1 Digi-Reel 4,532 1
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    Avnet Americas IPD50N03S2L06ATMA1 Tape & Reel 12 Weeks 2,500
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    Rochester Electronics IPD50N03S2L06ATMA1 28,946 1
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    Chip One Stop IPD50N03S2L06ATMA1 Cut Tape 2,500 0 Weeks, 1 Days 1
    • 1 $2.37
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    Goford Semiconductor G50N03K

    N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
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    DigiKey () G50N03K Cut Tape 4,483 1
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    G50N03K Digi-Reel 4,483 1
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    G50N03K Tape & Reel 2,500 2,500
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    UMW IPD050N03LGATMA1

    MOSFET N-CH 30V 50A DPAK
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    DigiKey () IPD050N03LGATMA1 Cut Tape 1,817 1
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    IPD050N03LGATMA1 Digi-Reel 1,817 1
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    50N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    50N03

    Abstract: Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32
    Contextual Info: Bay Linear Linear Excellence 50N035 N-Channel Field Effect Transistor Description Features • The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications


    Original     		50N035 O-220 50N03 Diode BAY 32 50N035 50N035T Bay Linear 50N035S 52A32 PDF

    ISS355

    Abstract: 50N03 22N3904 si4431 BAT 43 - 46 - 85 - 86 F1AJ3 TL494 2n3904 D50N03 23C56
    Contextual Info: R149 VCC CN5 ADAPT ER 1 3 5 7 9 11 13 15 17 19 21 23 25 220 ADAPT ER R127 1 2 Q34 32N3906 DD_ON VR_ON SYS_SCL SYS_SDA R129 10K ALERT 4.7K BAT _ON BAT FULL1 BAT CH_A I_ALARM 2 4 6 8 10 12 14 16 18 20 22 24 26 1 3 5 7 9 11 13 15 17 19 21 23 25 2 4 6 8 10 12


    Original     		CON26 32N3906 LM358 2N3904 47UF/6 2N3904 MAX1701 QSOP-24) 470PF 1UF/35V ISS355 50N03 22N3904 si4431 BAT 43 - 46 - 85 - 86 F1AJ3 TL494 D50N03 23C56 PDF

    50N03

    Contextual Info: 50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		NTD50N03R NTD50N03R/D 50N03 PDF

    50n03

    Abstract: 6030L 70N03 P transistor Comparison Tables 70N03
    Contextual Info: Optim ization of the Performance of Power Supply Circuits That Use Low Voltage, Low On-Resistance M O SFETs By F. luan Hshieh, Sydney So, Jeff Chuc Low Voltage, Low On-Resistance Trench MOSFET Design Abstract A typical discrete double-diffused MOSFET or DMOS tran­


    OCR Scan     		PDF

    50N03

    Contextual Info: 50N03R Power MOSFET 25 V, 45 A, Single N−Channel, DPAK Features • • • • • Planar Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Pb−Free Packages are Available


    Original     		NTD50N03R NTD50N03R/D 50N03 PDF

    toy helicopter remote control circuit diagram

    Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
    Contextual Info: Infineon Solutions for Transportation 24 V, Leisure Vehicles and Small Electrical Carts [ www.infineon.com ] 2 Contents Introduction 04 Application Segments 06 Trucks 08 Leisure Vehicles 10 Electrical Vehicles 12 Products Microcontrollers 14 Automotive Power


    Original     		B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter PDF

    50N03

    Abstract: inverter 12v to 220 ac mosfet based
    Contextual Info: Final Electrical Specifications L ifm L T C 1530 TECHNOLOGY High P ow er Synchronous S w itching R egulator C ontro ller N o v e m b e r 1998 FCRTURCS D C S C R IP TIO n • High Power Buck Converter from 5V or 3.3V Main Power ■ Adjustable Current Limit in SO-8 with


    OCR Scan     		300kHz LTC1753 LTC1553L 50N03 inverter 12v to 220 ac mosfet based PDF

    optimos battery protection reverse

    Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
    Contextual Info: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the


    Original     		FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package PDF

    TLE7201

    Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
    Contextual Info: Automotive Power Selection Guide Ultimate POWER – Perfect Control CO M P L E T E A u t o m o t i v e S o l u t i o ns f r o m I n f i n e o n www.infineon.com/power Never stop thinking. Introduction Power and Control – a Successful Combination D O Y O U N E E D to control more power? With increasing accuracy? Do


    Original     		B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519 PDF

    IRF4953

    Abstract: 50N03 IR*435 2n3904 h2 c F01J2E IRF4435 M339 2n3904-c49 IC la 4148 IRF44
    Contextual Info: Charger Board 1 of 5 CV_A CCO SK24 2 T EMP C2 10UF/50V 2220 1 1K R29 R34 10K D4 F01J2E R7 4.7K VC B 4 VC VCC Q3 2N3904 10K R1 1 2 D2 1,2,3 1 5,6,7,8 B Q8 2N3904 10K R33 R20 D5 F01J2E R2 470 B 2 VC 1N4148 D7 10K R30 BAT C8 0.1UF 4.7K 10K R8 Q1 IRF4435(SO-8)


    Original     		2UF/25V B114EK WIN716 SSOP-30) 1N4148 8P4R-10K 47UF/6 50N03 IRF4953 IR*435 2n3904 h2 c F01J2E IRF4435 M339 2n3904-c49 IC la 4148 IRF44 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 PDF

    bts 2106

    Abstract: bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL
    Contextual Info: T E M P F E T , H I T F E T ®, P R O F E T ®, T R I L I T H I C ®, O p t i M O S Ultimate POWER needs PERFECT Control Smart Power Switches and Bridges www.infineon.com Never stop thinking. Improve your System and Replace the Relays with Infineon SMART POWER SWITCHES and


    Original     		B112-H6731-G8-X-7600 bts 2106 bts 425 l1 80N04 BTS 5155 BTS 2146 Tekelec TA BTS 3012 BTS 240-A SIEMENS tle 420 CA 5210 PL PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 PDF

    50n03s2-07

    Abstract: 50N03 MOSFET having TO-252 PAckage APPS071E TO252-3 rthjc copper bond wire infineon SPP100N04S2L03 100n04s2l-03 50N06 50N03S2L-06
    Contextual Info: Application Note, V 1.0, June 2002 APPS071E  OptiMOS PowerBondä by Jean-Philippe Boeschlin Automotive Power Never stop -1- thinking. APPS071E OptiMOS  PowerBondä Powerbond II II Powerbond 1. Abstract Powerbond II Powerbond This Application Note introduces Infineon


    Original     		APPS071E 50n03s2-07 50N03 MOSFET having TO-252 PAckage APPS071E TO252-3 rthjc copper bond wire infineon SPP100N04S2L03 100n04s2l-03 50N06 50N03S2L-06 PDF