50n03s2-07
Abstract: 50N03 MOSFET having TO-252 PAckage APPS071E TO252-3 rthjc copper bond wire infineon SPP100N04S2L03 100n04s2l-03 50N06 50N03S2L-06
Contextual Info: Application Note, V 1.0, June 2002 APPS071E OptiMOS PowerBondä by Jean-Philippe Boeschlin Automotive Power Never stop -1- thinking. APPS071E OptiMOS PowerBondä Powerbond II II Powerbond 1. Abstract Powerbond II Powerbond This Application Note introduces Infineon
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apps071e50n03s2-0750n03mosfet having to-252 package+6to252-3 rthjccopper bond wire infineonspp100n04s2l03100n04s2l-0350n0650n03s2l-06
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1n0608
Abstract: infineon 1n0608 SMD Diode V6 marking code SPP80N06S-08 1n06 PG-TO263-3-2 SPB80N06S-08 SPI80N06S-08 smd diode v6 58 smd diode V6 64
Contextual Info: SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features • N-channel - Normal Level -Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow
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spb80n06s-08spi80n06s-08spp80n06s-08pg-to263-3-2+9pg-to262-3-1pg-to220-3-1sp0000-848081n0608infineon 1n0608smd diode v6 marking code1n06smd diode v6 58smd diode v6 64
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1n0608
Abstract: infineon 1n0608 SPB80N06S-08 SPP80N06S-08 marking CODE R SMD DIODE to262 pcb footprint TRANSISTOR SMD MARKING CODE ag Q67060-S6185 SPI80N06S-08 Q67060-S6186
Contextual Info: SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.7 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature
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spb80n06s-08spi80n06s-08spp80n06s-08p-to263-3-2+9p-to262-3-1p-to220-3-1q67060-s61851n0608infineon 1n0608marking code r smd diodeto262 pcb footprinttransistor smd marking code agq67060-s6186
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