8N80 Search Results

8n80

Abstract: MOSFET 8N80 ua 471 TO-220-F1 8N80L-TA3-T 8N80G-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

8n80l

Abstract: ua 471 8n80
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

8n80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

96527

Abstract: 9N80 8n80
Contextual Info: OIXYS VDSS HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 DS on tr r 800V 8A 1.1Q 250ns 800V 9A 0.9ß 250ns TO-247 AD (IXFH) Preliminary data f D(TAB) Symbol Test Conditions v'DSS T j =25°C to150°C

gc212

Abstract: STH8N80 STH8N80FI STW8N80 C18070
Contextual Info: 7 T 2 t1 2 3 7 OOMSTOO *=554 • S G T H _ SGS-THOMSON LK3TOKS ¿ 5 7 8N80/FI 8N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V 8N80 STH8N 80FI STW 8N80 ■ . ■ . . . ■ dss 800 V 800 V 800 V RDS on Id

STH8N80FI

Abstract: 8N80F 8n80
Contextual Info: *57 8N80 8N80FI SGS-THOMSON iLC N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE 8N80 STH 8N80FI Voss RpS on Id 800 V 800 V 1.2 a 1.2 n 8 .2 A 5.1 A . . . . . . AVALANC HE R UG G EDNESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

9N80

Abstract: 8n80 BSC 031 N 06 NS 3 smd U
Contextual Info: HiPerFET Power MOSFETs IXFH 8N80 IXFH 9N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family ^DSS ^D25 800 V 800 V 8A 9A P DS on t rr 1.1 ft 250 ns o.g a 250 ns TO-247 AD (IXFH) Preliminary data D (TAB) Symbol Test Conditions Maximum Ratings

8N80

Abstract: ua 471
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

7N80

Abstract: 8N80 gs 1117 ax 17n80
Contextual Info: n TV V C U 1 A I J IXFH 7N80 ,XFM 7N80 IXFH 8N80 HiPerFET Power MOSFETs 1 TM IXFM 8N80 IXFH/FM 7N80 IXFH/FM 8N80 □ VDSs ^D25 DS on 800 V 800 V 7A 8A 1.4 a 1.2 Q N-Channel Enhancement Mode High d v /d t, L o w t ^ , HDMOS Family Symbol Test Conditions

8N80

Abstract: ua 471 8N80l 8N80L-TF3-T 8N80L-TF2-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

8n80

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 8N80 Preliminary Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state

8n80

Abstract: STW8N80 KT 0803 K
Contextual Info: £ 8N80 FI 8N80 SGS-THOMSON ï ULKgraMOeS j N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E STH 8N 80 STH 8N 80FI STW 8N80 • . . . . . . V dss RDS on Id 800 V 800 V 800 V < 1 .2 il 8.2 A 5. 1 A 8.2 A < 1 .2 il < 1 .2 Q TYPICAL RDS(on) = 0.98 £2

Contextual Info: 8N80K5 N-channel 800 V, 0.80 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID 8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)

Contextual Info: 8N80K5 N-channel 800 V, 0.80 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID 8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)

Contextual Info: 8N80K5 N-channel 800 V, 0.8 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK package Datasheet − production data Features TAB Order code VDS RDS on max. ID PTOT 8N80K5 800 V 0.95 Ω 6A 110 W • Worldwide best FOM (figure of merit)

STD8N80K5

Abstract: STU8N80K5 STFI8N80K5 STP8N80K5 STF8N80K5 8N80K5
Contextual Info: 8N80K5, 8N80K5, 8N80K5, 8N80K5, 8N80K5 N-channel 800 V, 0.76 Ω typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK, TO-220FP, I2PAKFP, TO-220 and IPAK Datasheet — preliminary data Features Order codes TAB VDSS RDS on max. ID

STU8N80K5

Abstract: 8N80K5 TL 139 std8n80k5 stf8n80
Contextual Info: 8N80K5, 8N80K5, 8N80K5, 8N80K5, 8N80K5 N-channel 800 V, 0.76 Ω, 6 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, I2PAKFP, TO-220 and IPAK Datasheet — preliminary data Features Order codes TAB VDSS RDS on max. ID PW 3 1

ixys ixfn 55n50

Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Contextual Info: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

8N80

Abstract: 9n80 diode 931 p 7 W8N80 smd diode SM 97 IXFH9N80 IXFH8N80 125OC 08N80 diode A2 9
Contextual Info: Preliminary Data Sheet VDSS HiPerFET Power MOSFETs TM 8N80 800V IXFH9N80 800V ID25 RDS on trr 8A 9A 1.1Ω 0.9Ω 250 ns 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS

Contextual Info: Preliminary Data Sheet v HiPerFET Power MOSFETs D DSS 800V 800V N-Channel Enhancement Mode High dv/dt, Lowtrr, HDMOS™ Family ^D25 DS on 8A 9A 1.1Q 0.9 Q. K 250 ns 250 ns ?D G TO-247 AD (IXFH) As Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 150°C

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

IXfk 75 N 50

Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
Contextual Info: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400