08N80C3
Abstract: equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W
Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spa08n80c3pg-to220fp08n80c3equivalent 08n80c3+4spa08n80c3 equivalentjesd22d51ac40w
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08N80C3
Abstract: equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80c Q67040-S4437 transistor SPP08N80C3 08n80
Contextual Info: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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spp08n80c3spa08n80c3p-to220-3-31p-to220-3-1+9p-to-220-3-31q67040s443608n80c3equivalent 08n80c308n80cq67040-s4437transistor spp08n80c308n80
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08N80C3
Abstract: equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3
Contextual Info: 08N80C3, 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 VDS 800 V RDS on 0.65 Ω ID 8 A P-TO262 P-TO220-3-1 • Extreme dv/dt rated
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spp08n80c3spi08n80c3spa08n80c3p-to220-3-31+7p-to262p-to220-3-1p-to-220-3-3108n80c3equivalent 08n80c3q67040-s4632transistor spp08n80c3
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Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spi08n80c3pg-to262-308n80c3 |
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SPA08N80C3
Abstract: spa08n80
Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spa08n80c3pg-to220fp08n80c3spa08n80 |
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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cy8c38cy8c29incl79512t9797+1612t980412t980312t980012t980212t980112t9805arduino mega256013001 s 6d transistorarduino uno rev 3agilent optical encoder 9988mz 13001 transistorarduino mega 2650skiip 613 gb 123 ctarduino sound sensor module picarduino nanomc34063l
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08N80C3
Abstract: 08n80
Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spp08n80c3pg-to220-308n80c308n80 |
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08N80C3
Abstract: equivalent 08N80C3 PG-TO220-3 JESD22 SPP08N80C3 D51A
Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spp08n80c3pg-to220-308n80c3equivalent 08n80c3+2jesd22d51a
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Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spa08n80c3pg-to220fp08n80c3 |
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SPP08N80C3
Abstract: 08n80c3
Contextual Info: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31
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spp08n80c3spa08n80c3p-to220-3-31p-to220-3-1+3q67040s443608n80c3
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d51a
Abstract: PG-TO262-3
Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spi08n80c3pg-to262-308n80c3d51a |
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08N80C3
Abstract: 08N80 08n80c SPI08N80C3 JESD22 diode d51
Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spi08n80c3pg-to262-308n80c308n80+308n80cjesd22diode d51
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08n80c3
Abstract: d51a SPP08N80C3
Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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transistor SPP08N80C3
Abstract: 08N80C3 SPP08N80C3 08N80
Contextual Info: 08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated
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spp08n80c3p-to220-3-1q67040s4436+308n80c3transistor spp08n80c308n80
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PEF 24628
Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by
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b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819
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omron relay G2R-2 8 pin 12V DC
Abstract: Tyco 3604 relay krp power source sps 6360 SRD 12VDC SL C data 8873 64 pin colour tv ic TTK SG 2368 transistor DK qe smd eaton T85 rotary Switch PH ON 823 m 8645 ic MB 16651 G
Contextual Info: ND3% BASE1 XXXX5998-1631-1-P 1631 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 08:29 TS:TS date TS time RELAYS, SOLENOIDS & CONTACTORS Go Online for Product Availability AUTOMOTIVE RELAYS DG34 SERIES AUTOMOTIVE INDUSTRIAL POWER RELAYS 60-80A AUTOMOTIVE RELAYS CONT.
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277vac30vdc10vac/dc250vac+1610million0-80adg34-1021-36-1012-f59piarqs18uuas18uuaqomron relay g2r-2 8 pin 12v dctyco 3604 relaykrp power source sps 6360srd 12vdc sl cdata 8873 64 pin colour tv icttk sg 2368transistor dk qe smdeaton t85 rotary switchph on 823 m 8645ic mb 16651 g
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BCM 4336
Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06
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b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265
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08N80C3
Abstract: spa08n
Contextual Info: 08N80C3 08N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31
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spp08n80c3spa08n80c3p-to220-3-31p-to220-3-1+4q67040s443608n80c3spa08n
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08N80C3
Abstract: Q67040-S4437 SPP08N80C3 08n80
Contextual Info: 08N80C3 08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
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spp08n80c3spa08n80c3p-to220-3-31p-to-220-3-31+5p-to220-3-1q6704008n80c3q67040-s443708n80
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08N80C3
Abstract: 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W
Contextual Info: 08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
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spa08n80c3pg-to220fp08n80c308n80c+608n80equivalent 08n80c3jesd22pg-to220-3page-10c40w
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